| 图片 |
型号 |
品牌 |
封装 |
数量 |
描述 |
PDF资料 |
|
2SK2544(F) |
Toshiba |
TO-220-3 |
|
MOSFET MOSFET N-Ch 600V 6A Rdson=1.25Ohm |
|
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:30 V,漏极连续... |
|
2SK2545(Q,T) |
Toshiba |
TO-220 |
|
MOSFET N-ch 600V 6A 0.9 ohm |
|
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 30 V,... |
|
2SK2602(F,T) |
Toshiba |
TO-3P |
|
MOSFET MOSFET N-Ch 600V 6A Rdson 1.25 Ohm |
|
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 30 V,... |
|
2SK2606(F) |
Toshiba |
TO-3P(N)IS |
|
MOSFET MOSFET N-Ch 800V 8A Rdson 1.2 Ohm |
|
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:800 V,闸/源击穿电压:+/- 30 V,... |
|
2SK2607(F,T) |
Toshiba |
|
|
MOSFET N-Ch FET RDS 1.0 Ohm IDSS 100uA VDS 640V |
|
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,包装形式:Reel,工厂包装数量:50,... |
|
2SK2611(F,T) |
Toshiba |
TO-3 |
|
MOSFET MOSFET N-Ch 900V 9A Rdson 1.4 Ohm |
|
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:900 V,闸/源击穿电压:30 V,漏极连续... |
|
2SK2613(F) |
Toshiba |
TO-3P |
|
MOSFET MOSFET N-Ch 1000V 8A Rdson 1.7 Ohm |
|
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:1000 V,闸/源击穿电压:+/- 30 V... |
|
2SK2614 |
Toshiba |
|
|
MOSFET N-Ch 50V 20A Rdson 0.046 Ohm |
|
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:否,包装形式:Bulk,工厂包装数量:200,... |
|
2SK2614(Q) |
Toshiba |
S-7B-5B |
|
MOSFET N-Ch 50V 20A Rdson 0.046 Ohm |
|
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:50 V,闸/源击穿电压:+/- 20 V,漏... |
|
2SK2615(TE12L,F) |
Toshiba |
|
|
MOSFET N-Ch FET RDS .23 Ohm IDSS 100uA VDS 60V |
|
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,包装形式:Tube,工厂包装数量:1000,... |
|
2SK2698 |
Toshiba |
|
|
MOSFET N-Ch 500V 15A Rdson 0.4 Ohm |
|
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,... |
|
2SK2698(F,T) |
Toshiba |
TO-3 PN |
|
MOSFET N-Ch 500V 15A Rdson 0.4 Ohm |
|
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:30 V,漏极连续... |
|
2SK3561 |
Toshiba |
|
|
MOSFET N-Ch 500V 8A Rdson 0.85 Ohm |
|
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:否,... |
|
2SK3561(Q) |
Toshiba |
TO-220 NIS |
|
MOSFET N-Ch 500V 8A Rdson 0.85 Ohm |
|
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:30 V,漏极连续... |
|
2SK3561(Q,M) |
Toshiba |
TO-220 NIS |
|
MOSFET MOSFET N-Ch 500V 8A Rdson 0.85 Ohm |
|
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,... |
|
2SK3562 |
Toshiba |
|
|
MOSFET N-Ch 600V 6A Rdson 1.25 Ohm |
|
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:否,... |
|
2SK3562(Q) |
Toshiba |
TO-220 SIS |
|
MOSFET N-Ch 600V 6A Rdson 1.25 Ohm |
|
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:30 V,漏极连续... |
|
2SK3563 |
Toshiba |
|
|
MOSFET N-Ch 500V 5A Rdson 1.5 Ohm |
|
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:否,... |
|
2SK3563(Q) |
Toshiba |
TO-220 SIS |
|
MOSFET N-Ch 500V 5A Rdson 1.5 Ohm |
|
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:30 V,漏极连续... |
|
2SK3564 |
Toshiba |
|
|
MOSFET N-Ch 900V 3A Rdson 4.3 Ohm |
|
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,... |