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Toshiba

Toshiba

Toshiba America Electronic Components, Inc. (TAEC) is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer. Toshiba is a global leader in the design and manufacture of high-quality Flash memory-based storage solutions, discrete devices, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers (MCUs), and wireless components.Toshiba products are ideal for automotive, imaging, LED lighting, mobile, multimedia, and wireless applications.
图片 型号 品牌 封装 数量 描述 PDF资料
点击查看2SK2544(F)参考图片 2SK2544(F) Toshiba TO-220-3 MOSFET MOSFET N-Ch 600V 6A Rdson=1.25Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:30 V,漏极连续...
2SK2545(Q,T) Toshiba TO-220 MOSFET N-ch 600V 6A 0.9 ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 30 V,...
2SK2602(F,T) Toshiba TO-3P MOSFET MOSFET N-Ch 600V 6A Rdson 1.25 Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 30 V,...
2SK2606(F) Toshiba TO-3P(N)IS MOSFET MOSFET N-Ch 800V 8A Rdson 1.2 Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:800 V,闸/源击穿电压:+/- 30 V,...
2SK2607(F,T) Toshiba MOSFET N-Ch FET RDS 1.0 Ohm IDSS 100uA VDS 640V
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,包装形式:Reel,工厂包装数量:50,...
点击查看2SK2611(F,T)参考图片 2SK2611(F,T) Toshiba TO-3 MOSFET MOSFET N-Ch 900V 9A Rdson 1.4 Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:900 V,闸/源击穿电压:30 V,漏极连续...
2SK2613(F) Toshiba TO-3P MOSFET MOSFET N-Ch 1000V 8A Rdson 1.7 Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:1000 V,闸/源击穿电压:+/- 30 V...
点击查看2SK2614参考图片 2SK2614 Toshiba MOSFET N-Ch 50V 20A Rdson 0.046 Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:否,包装形式:Bulk,工厂包装数量:200,...
点击查看2SK2614(Q)参考图片 2SK2614(Q) Toshiba S-7B-5B MOSFET N-Ch 50V 20A Rdson 0.046 Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:50 V,闸/源击穿电压:+/- 20 V,漏...
2SK2615(TE12L,F) Toshiba MOSFET N-Ch FET RDS .23 Ohm IDSS 100uA VDS 60V
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,包装形式:Tube,工厂包装数量:1000,...
2SK2698 Toshiba MOSFET N-Ch 500V 15A Rdson 0.4 Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,...
点击查看2SK2698(F,T)参考图片 2SK2698(F,T) Toshiba TO-3 PN MOSFET N-Ch 500V 15A Rdson 0.4 Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:30 V,漏极连续...
2SK3561 Toshiba MOSFET N-Ch 500V 8A Rdson 0.85 Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:否,...
2SK3561(Q) Toshiba TO-220 NIS MOSFET N-Ch 500V 8A Rdson 0.85 Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:30 V,漏极连续...
点击查看2SK3561(Q,M)参考图片 2SK3561(Q,M) Toshiba TO-220 NIS MOSFET MOSFET N-Ch 500V 8A Rdson 0.85 Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,...
2SK3562 Toshiba MOSFET N-Ch 600V 6A Rdson 1.25 Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:否,...
点击查看2SK3562(Q)参考图片 2SK3562(Q) Toshiba TO-220 SIS MOSFET N-Ch 600V 6A Rdson 1.25 Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:30 V,漏极连续...
2SK3563 Toshiba MOSFET N-Ch 500V 5A Rdson 1.5 Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:否,...
点击查看2SK3563(Q)参考图片 2SK3563(Q) Toshiba TO-220 SIS MOSFET N-Ch 500V 5A Rdson 1.5 Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:30 V,漏极连续...
2SK3564 Toshiba MOSFET N-Ch 900V 3A Rdson 4.3 Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,...

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