| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
APTGLQ100DA120T1G | Microchip Technology | 1500 | IGBT MODULE 1200V 170A 520W SP1 | ||
| 参数：Microchip Technology|散装|-|在售|沟槽型场截止|升压斩波器|1200 V|170 A|520 W|2.42V @ 15V，100A|50... | ||||||
|
FP50R06W2E3B11BOMA1 | Infineon Technologies | 模块 | IGBT MODULE 600V 65A 175W | ||
| 参数：Infineon Technologies|托盘|EasyPIM? 2B|在售|沟槽型场截止|三相反相器|600 V|65 A|175 W|1.9V @ 15V... | ||||||
|
|
MIXG240RF1200PTED | IXYS | E2 | IGBT MODULE - BRAKE E2-PACK-PFP | ||
| 参数：IXYS|盒|-|在售|PT|单斩波器|1200 V|335 A|1250 W|2V @ 15V，200A|200 μA|-|标准|是|-40°C ~ 175°... | ||||||
|
|
FP25R12W2T4PB11BPSA1 | Infineon Technologies | 模块 | IGBT MOD 1200V 50A 20MW | ||
| 参数：Infineon Technologies|托盘|EasyPIM?|在售|沟槽型场截止|三相反相器|1200 V|50 A|20 mW|2.25V @ 15V，... | ||||||
|
A2C50S65M2-F | STMicroelectronics | ACEPACK? 2 | IGBT MOD 650V 50A 208W ACEPACK2 | ||
| 参数：STMicroelectronics|托盘|-|在售|沟槽型场截止|三相反相器|650 V|50 A|208 W|2.3V @ 15V，50A|100 μA|4... | ||||||
|
|
F3L75R12W1H3B11BPSA1 | Infineon Technologies | 模块 | IGBT MOD 1200V 45A 275W | ||
| 参数：Infineon Technologies|托盘|-|在售|-|单斩波器|1200 V|45 A|275 W|1.7V @ 15V，30A|1 mA|4.4 n... | ||||||
|
|
A2C25S12M3 | STMicroelectronics | ACEPACK? 2 | 5 | IGBT MOD 1200V 25A 197W ACEPACK2 | |
| 参数：STMicroelectronics|托盘|-|在售|沟槽型场截止|三相反相器，带制动器|1200 V|25 A|197 W|2.45V @ 15V，25A|1... | ||||||
|
FS50R12W2T4B11BOMA1 | Infineon Technologies | 模块 | IGBT MOD 1200V 83A 335W | ||
| 参数：Infineon Technologies|托盘|EasyPACK?|在售|沟槽型场截止|三相反相器|1200 V|83 A|335 W|2.15V @ 15V... | ||||||
|
|
APTGLQ30H65T3G | Microchip Technology | 1500 | IGBT MODULE 650V 40A 95W | ||
| 参数：Microchip Technology|散装|-|在售|沟槽型场截止|全桥|650 V|40 A|95 W|2.3V @ 15V，30A|50 μA|1.9 ... | ||||||
|
|
APTGLQ25H120T1G | Microchip Technology | 1500 | IGBT MODULE 1200V 50A 165W SP1 | ||
| 参数：Microchip Technology|散装|-|在售|沟槽型场截止|全桥|1200 V|50 A|165 W|2.42V @ 15V，25A|50 μA|1... | ||||||
|
|
MIXA10WB1200TED | IXYS | E2 | IGBT MODULE 1200V 17A 60W E2 | ||
| 参数：IXYS|盒|-|在售|PT|三相反相器，带制动器|1200 V|17 A|60 W|2.1V @ 15V，9A|700 μA|-|三相桥式整流器|是|-40°... | ||||||
|
|
A2C25S12M3-F | STMicroelectronics | ACEPACK? 2 | 1 | IGBT MOD 1200V 25A 197W ACEPACK2 | |
| 参数：STMicroelectronics|托盘|-|在售|沟槽型场截止|三相反相器，带制动器|1200 V|25 A|197 W|2.45V @ 15V，25A|1... | ||||||
|
|
MIXA30W1200TED | IXYS | E2 | IGBT MODULE 1200V 43A 150W E2 | ||
| 参数：IXYS|盒|-|在售|PT|三相反相器，带制动器|1200 V|43 A|150 W|2.1V @ 15V，25A|2.1 mA|-|标准|是|-40°C ~... | ||||||
|
|
APTGLQ50VDA65T3G | Microchip Technology | 1505 | IGBT MODULE 650V 70A 175W SP3F | ||
| 参数：Microchip Technology|散装|-|在售|沟槽型场截止|双路升压斩波器|650 V|70 A|175 W|2.3V @ 15V，50A|50 μ... | ||||||
|
|
APTGLQ50DDA65T3G | Microchip Technology | 2183 | IGBT MODULE 650V 70A 175W | ||
| 参数：Microchip Technology|散装|-|在售|沟槽型场截止|双路升压斩波器|650 V|70 A|175 W|2.3V @ 15V，50A|50 μ... | ||||||
|
FP15R12KT3BOSA1 | Infineon Technologies | 模块 | 5 | IGBT MOD 1200V 18A 83.5W | |
| 参数：Infineon Technologies|散装|-|Digi-Key 停止提供|-|三相反相器|1200 V|18 A|83.5 W|2.45V @ 15V，... | ||||||
|
|
BSM10GD120DN2E3224BOSA1 | Infineon Technologies | 模块 | IGBT MODULE 1200V 15A 80W | ||
| 参数：Infineon Technologies|托盘|-|最后售卖|-|全桥|1200 V|15 A|80 W|3.2V @ 15V，10A|400 μA|530 ... | ||||||
|
DF200R12W1H3B27BOMA1 | Infineon Technologies | 模块 | IGBT MOD 1200V 30A 375W | ||
| 参数：Infineon Technologies|托盘|-|在售|-|2 个独立式|1200 V|30 A|375 W|1.3V @ 15V，30A|1 mA|2 n... | ||||||
|
|
NXH50M65L4Q1SG | onsemi | 56-PIM（93x47） | Q1PACK 50A 650V | ||
| 参数：onsemi|托盘|-|在售|沟槽型场截止|全桥|650 V|48 A|86 W|2.22V @ 15V，50A|300 μA|3.137 nF @ 20 V|... | ||||||
|
|
APTGTQ100A65T1G | Microchip Technology | 1500 | IGBT MODULE 650V 100A 250W SP1 | ||
| 参数：Microchip Technology|散装|-|在售|-|半桥|650 V|100 A|250 W|2.2V @ 15V，100A|100 μA|6 nF ... | ||||||
232/234 首页 上页 [227] [228] [229] [230] [231] [232] [233] [234] 下页 尾页
