Toshiba
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Toshiba America Electronic Components, Inc. (TAEC) is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer. Toshiba is a global leader in the design and manufacture of high-quality Flash memory-based storage solutions, discrete devices, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers (MCUs), and wireless components.Toshiba products are ideal for automotive, imaging, LED lighting, mobile, multimedia, and wireless applications. |
| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
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TK8A60DA(STA4,Q,M) | Toshiba | TO-220SIS | MOSFET N-Ch MOS 7.5A 600V 45W 1050pF 1 Ohm | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Tube，... | ||||||
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TK8A60W,S4VX | Toshiba | TO-220-3 整包 | MOSFET N-Ch 8A 30W FET 600V 570pF 18.5nC | ||
| 参数：制造商：Toshiba，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸/源击穿电压：30 V，漏极连续电流：8 A，电阻汲极/... | ||||||
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TK8A65D(Q) | Toshiba | MOSFET N-ch 650V 8A TO-220SIS | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，... | ||||||
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TK8A65D(STA4,Q,M) | Toshiba | TO-220SIS | 72 | MOSFET N-Ch FET 650V 4.5s IDSS 10 uA 0.7 Ohm | |
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，... | ||||||
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TK8S06K3L(T6L1,NQ) | Toshiba | DPAK+ | MOSFET N-Ch MOS 8A 60V 25W 400pF 0.054 | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Reel，... | ||||||
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TK9A45D(STA4,Q,M) | Toshiba | TO-220SIS | MOSFET N-Ch MOS 7.5A 450V 40W 800pF 0.77 | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Tube，... | ||||||
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TK9A55DA(STA4,Q,M) | Toshiba | TO-220SIS | MOSFET N-Ch MOS 8.5A 550V 40W 1050pF 0.86 | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Tube，... | ||||||
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TK9A60D(STA4,Q,M) | Toshiba | TO-220SIS | MOSFET N-Ch MOS 9A 600V 45W 1200pF 0.83 | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Tube，... | ||||||
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TPN14006NH,L1Q | Toshiba | 8-TSON Advance（3.1x3.1） | MOSFET N-Ch 60V 1000pF 15nC 13.9mOhm 33A 30W | ||
| 参数：制造商：Toshiba，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：20 V，漏极连续电流：33 A，电阻汲极/... | ||||||
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TPN22006NH,LQ | Toshiba | 8-PowerVDFN | MOSFET N-Ch 60V 21A 18W UMOSVIII 710pF 12nC | ||
| 参数：制造商：Toshiba，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：20 V，漏极连续电流：21 A，电阻汲极/... | ||||||
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TPN2R503NC,L1Q | Toshiba | 8-PowerVDFN | MOSFET N-Ch 30V 2230pF 40nC 2.5mOhm 85A 35W | ||
| 参数：制造商：Toshiba，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：20 V，漏极连续电流：85 A，电阻汲极/... | ||||||
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TPN30008NH,LQ | Toshiba | 8-PowerVDFN | MOSFET N-Ch 80V 22A 27W UMOSVIII 710pF 11nC | ||
| 参数：制造商：Toshiba，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：80 V，闸/源击穿电压：20 V，漏极连续电流：22 A，电阻汲极/... | ||||||
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TPN3300ANH,LQ | Toshiba | 8-PowerVDFN | 10,424 | MOSFET N-Ch 100V 21A 27W UMOSVIII 680pF 11nC | |
| 参数：制造商：Toshiba，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电压：20 V，漏极连续电流：21 A，电阻汲极... | ||||||
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TPN6R303NC,LQ | Toshiba | 8-TSON Advance（3.1x3.1） | MOSFET N-Ch 30V 1370pF 24nC 6.3mOhm 43A 19W | ||
| 参数：制造商：Toshiba，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：20 V，漏极连续电流：43 A，电阻汲极/... | ||||||
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TPC6503(TE85L,F,M) | Toshiba | VS-6（2.9x2.8） | MOSFET NPN hFE 400 to 1000 VCE 0.12V tF 45ns | ||
| 参数：Toshiba Semiconductor and Storage|卷带（TR）|U-MOSVII|停产|NPN|1.5 A|30 V|120mV @ 10mA... | ||||||
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TPH12008NH,L1Q | Toshiba | 8-PowerVDFN | MOSFET N-Ch 80V 1490pF 22nC 12.3mOhm 44A 48W | ||
| 参数：制造商：Toshiba，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：80 V，闸/源击穿电压：20 V，漏极连续电流：44 A，电阻汲极/... | ||||||
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TPH14006NH,L1Q | Toshiba | 8-SOP Advance（5x5） | MOSFET N-Ch 60V FET 14A 32W 1020pF 16nC | ||
| 参数：制造商：Toshiba，RoHS：是，包装形式：Reel，... | ||||||
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TPH1400ANH,L1Q | Toshiba | 8-PowerVDFN | 7,666 | MOSFET N-Ch 60V 42A 48W UMOSVIII 1440pF 22nC | |
| 参数：制造商：Toshiba，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电压：20 V，漏极连续电流：42 A，电阻汲极... | ||||||
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TPH4R606NH,L1Q | Toshiba | 8-SOP Advance（5x5） | MOSFET N-Ch 60V FET 32A 63W 3050pF 49nC | ||
| 参数：制造商：Toshiba，RoHS：是，包装形式：Reel，... | ||||||
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TPH5R906NH,L1Q | Toshiba | 8-SOP Advance（5x5） | MOSFET N-Ch 60V FET 28A 57W 2340pF 38nC | ||
| 参数：制造商：Toshiba，RoHS：是，包装形式：Reel，... | ||||||
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