CEL

California Eastern Laboratories (CEL) is the exclusive sales and marketing partner in North America and Latin America for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly NEC Electronics Corporation. These products include RF components and RFICs, optocouplers, solid state relays, and lasers and detectors for fiber optics. CEL maintains extensive inventories, sets pricing, and provides engineering and applications support at its design center in Santa Clara, CA. CEL also develops its MeshConnect™ line of IEEE 802.15.4/ZigBee radio modules and transceiver ICs and is a member of the ZigBee Alliance (www.zigbee.org)

型号	品牌	封装	描述
NE6510179A-EVPW24	CEL	79A	射频GaAs晶体管 For NE6510179A-A Power at 2.4 GHz
参数：制造商：CEL，产品种类：射频GaAs晶体管，RoHS：否，技术类型：HEMT，频率：1.9 GHz，增益：10 dB，漏源电压 VDS：8 V，闸/源击穿电压...
NE6510179A-EVPW26	CEL	79A	射频GaAs晶体管 For NE6510179A-A Power at 2.6 GHz
参数：制造商：CEL，产品种类：射频GaAs晶体管，RoHS：否，技术类型：HEMT，频率：1.9 GHz，增益：10 dB，漏源电压 VDS：8 V，闸/源击穿电压...
NE6510179A-EVPW35	CEL	79A	射频GaAs晶体管 For NE6510179A-A Power at 3.5 GHz
参数：制造商：CEL，产品种类：射频GaAs晶体管，RoHS：否，技术类型：HEMT，频率：1.9 GHz，增益：10 dB，漏源电压 VDS：8 V，闸/源击穿电压...
NE6510179A-T1-A	CEL	79A	射频GaAs晶体管 L&S Band GaAs HJFET
参数：CEL\|卷带（TR）\|-\|停产\|GaAs HJ-FET\|-\|1.9GHz\|10dB\|3.5 V\|2.8A\|-\|200 mA\|32.5dBm\|8 V\|-\|4-SM...
NE651R479A-A	CEL	79A	射频GaAs晶体管 L&S Band GaAs HJFET
参数：CEL\|散装\|-\|停产\|GaAs HJ-FET\|-\|1.9GHz\|12dB\|3.5 V\|1A\|-\|50 mA\|27dBm\|8 V\|-\|4-SMD，扁平引线\|79...
NE651R479A-EVPW19	CEL	79A	射频GaAs晶体管 For NE651R479A-A Power at 1.9 GHz
参数：制造商：CEL，产品种类：射频GaAs晶体管，RoHS：否，技术类型：HEMT，频率：1.9 GHz，增益：12 dB，漏源电压 VDS：8 V，闸/源击穿电压...
NE651R479A-EVPW24	CEL	79A	射频GaAs晶体管 For NE651R479A-A Power at 2.4 GHz
参数：制造商：CEL，产品种类：射频GaAs晶体管，RoHS：否，技术类型：HEMT，频率：1.9 GHz，增益：12 dB，漏源电压 VDS：8 V，闸/源击穿电压...
NE651R479A-EVPW26	CEL	79A	射频GaAs晶体管 For NE651R479A-A Power at 2.6 GHz
参数：制造商：CEL，产品种类：射频GaAs晶体管，RoHS：否，技术类型：HEMT，频率：1.9 GHz，增益：12 dB，漏源电压 VDS：8 V，闸/源击穿电压...
NE651R479A-EVPW35	CEL	79A	射频GaAs晶体管 For NE651R479A-A Power at 3.5 GHz
参数：制造商：CEL，产品种类：射频GaAs晶体管，RoHS：否，技术类型：HEMT，频率：1.9 GHz，增益：12 dB，漏源电压 VDS：8 V，闸/源击穿电压...
NE651R479A-T1-A	CEL	79A	射频GaAs晶体管 L&S Band GaAs HJFET
参数：CEL\|卷带（TR）\|-\|停产\|GaAs HJ-FET\|-\|1.9GHz\|12dB\|3.5 V\|1A\|-\|50 mA\|27dBm\|8 V\|-\|4-SMD，扁平引...
NE3508M04-T2-A	CEL	F4TSMM，M04	射频GaAs晶体管 L to S Band Lo Noise Amplifier N-Ch HJFET
参数：CEL\|卷带（TR）\|-\|停产\|GaAs HJ-FET\|-\|2GHz\|14dB\|2 V\|120mA\|0.45dB\|10 mA\|18dBm\|4 V\|-\|SOT-3...
NE3509M04-A	CEL	M04	射频GaAs晶体管 L to S Band Lo Noise Amplifier N-Ch HJFET
参数：CEL\|散装\|-\|停产\|GaAs HJ-FET\|-\|2GHz\|17.5dB\|2 V\|60mA\|0.4dB\|10 mA\|11dBm\|4 V\|-\|SOT-343F\|...
NE4210S01	CEL	SMD	射频GaAs晶体管 Super Lo Noise HJFET
参数：CEL\|带\|-\|停产\|GaAs HJ-FET\|-\|12GHz\|13dB\|2 V\|15mA\|0.5dB\|10 mA\|-\|4 V\|-\|4-SMD\|SMD...
NE4210S01-T1B	CEL	SMD	射频GaAs晶体管 Super Lo Noise HJFET
参数：CEL\|卷带（TR）\|-\|停产\|GaAs HJ-FET\|-\|12GHz\|13dB\|2 V\|15mA\|0.5dB\|10 mA\|-\|4 V\|-\|4-SMD\|SMD...
NE3509M04-T2-A	CEL	M04	射频GaAs晶体管 L to S Band Lo Noise Amplifier N-Ch HJFET
参数：CEL\|卷带（TR）,剪切带（CT）,Digi-Reel 得捷定制卷带\|-\|停产\|GaAs HJ-FET\|-\|2GHz\|17.5dB\|2 V\|60mA\|0.4d...
NE3510M04-A	CEL	M04	射频GaAs晶体管 L-S Band Lo No Amp
参数：CEL\|散装\|-\|停产\|GaAs HJ-FET\|-\|4GHz\|16dB\|2 V\|97mA\|0.45dB\|15 mA\|11dBm\|4 V\|-\|SOT-343F\|M...
NE3510M04-T2-A	CEL	M04	射频GaAs晶体管 L-S Band Lo No Amp
参数：CEL\|卷带（TR）,剪切带（CT）,Digi-Reel 得捷定制卷带\|-\|停产\|GaAs HJ-FET\|-\|4GHz\|16dB\|2 V\|97mA\|0.45dB...
NE3511S02-A	CEL	S02	射频GaAs晶体管 X to Ku Band Super Low Noise Amp N-Ch
参数：CEL\|散装\|-\|停产\|GaAs HJ-FET\|-\|12GHz\|13.5dB\|2 V\|70mA\|0.3dB\|10 mA\|-\|4 V\|-\|4-SMD，扁平引线\|S...
NE3511S02-T1C-A	CEL	S02	射频GaAs晶体管 SUPER Lo Noise PseudomorpHIc HJ FET
参数：CEL\|卷带（TR）,剪切带（CT）,Digi-Reel 得捷定制卷带\|-\|停产\|GaAs HJ-FET\|-\|12GHz\|13.5dB\|2 V\|70mA\|0.3...
NE3512S02-A	CEL	S02	射频GaAs晶体管 C to Ku Band Super Low Noise Amp N-Ch
参数：CEL\|散装\|-\|停产\|GaAs HJ-FET\|-\|12GHz\|13.5dB\|2 V\|70mA\|0.35dB\|10 mA\|-\|4 V\|-\|4-SMD，扁平引线\|...

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