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Toshiba

Toshiba

Toshiba America Electronic Components, Inc. (TAEC) is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer. Toshiba is a global leader in the design and manufacture of high-quality Flash memory-based storage solutions, discrete devices, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers (MCUs), and wireless components.Toshiba products are ideal for automotive, imaging, LED lighting, mobile, multimedia, and wireless applications.
图片 型号 品牌 封装 数量 描述 PDF资料
2SK3068(Q) Toshiba TO-220 FL MOSFET MOSFET N-Ch 500V 12A Rdson=0.4Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,...
点击查看2SK3068(TE24L,Q)参考图片 2SK3068(TE24L,Q) Toshiba TO-220SM MOSFET MOSFET N-Ch 500V 12A Rdson=0.4Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:30 V,漏极连续...
点击查看2SK3127(TE24L,Q)参考图片 2SK3127(TE24L,Q) Toshiba TO-220SM MOSFET MOSFET N-Ch 30V 45A Rdson 0.012 Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:30 V,漏极连续电...
点击查看2SK3128(Q)参考图片 2SK3128(Q) Toshiba TO-3P-3,SC-65-3 MOSFET MOSFET N-Ch 30V 60A Rdson 0.012 Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏...
2SK3131(Q) Toshiba TO-3P MOSFET N-ch 500V 50A 0.140 ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,...
2SK3132(Q) Toshiba TO-3P(L) MOSFET N-ch 500V 50A 0.110 ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,漏极连续电流:50 A,电阻汲极/...
2SK3176(F) Toshiba TO-3P MOSFET MOSFET N-Ch 200V 30A Rdson 0.052 Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:+/- 20 V,...
2SK3265(F,T) Toshiba MOSFET MOSFET N-Ch, 700V, 10A
参数:制造商:Toshiba,工厂包装数量:50,...
2SK3301(Q) Toshiba PW-MOLD MOSFET MOSFET N-Ch 900V 1A Rdson=20Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:900 V,闸/源击穿电压:30 V,漏极连续...
2SK3301(TE16L1,NQ) Toshiba PW-MOLD MOSFET MOSFET N-Ch 900V 1A Rdson=20Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:900 V,闸/源击穿电压:30 V,漏极连续...
点击查看2SK3309(Q)参考图片 2SK3309(Q) Toshiba TO-220-3(SMT)标片 MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:450 V,闸/源击穿电压:+/- 30 V,...
点击查看2SK3309(TE24L,Q)参考图片 2SK3309(TE24L,Q) Toshiba TO-252-3,DPak(2 引线 + 接片),SC-63 MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:450 V,闸/源击穿电压:+/- 30 V,...
点击查看2SK3313(Q)参考图片 2SK3313(Q) Toshiba TO-220-3 整包 MOSFET N-ch 500V 12A 0.62 ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:30 V,漏极连续...
2SK3314(Q) Toshiba TO-3P 165 MOSFET N-ch 500V 20A 0.480 ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,...
2SK3373(TE16L1,NQ) Toshiba PW-MOLD MOSFET MOSFET N-Ch 500V 2A Rdson=3.2Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,...
2SK3387(TE24L,Q) Toshiba TFP MOSFET N-ch 150V 18A 0.08 ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:150 V,闸/源击穿电压:+/- 20 V,...
2SK3389(TE24L,Q) Toshiba TFP-4 MOSFET N-ch 30V 75A 0.004 ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:30 V,漏极连续电...
点击查看2SK3403(Q)参考图片 2SK3403(Q) Toshiba TO-220-3(SMT)标片 MOSFET MOSFET N-Ch 450V 13A Rdson=0.4Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:450 V,闸/源击穿电压:30 V,漏极连续...
2SK3403(TE24L,Q) Toshiba TO-220 SM MOSFET MOSFET N-Ch 450V 13A Rdson=0.4Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:450 V,闸/源击穿电压:30 V,漏极连续...
2SK3797(Q,M) Toshiba TO-220 SIS 480 MOSFET MOSFET N-Ch 600V 13A Rdson 0.43 Ohm
参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,漏极连续电流:13 A,电阻汲极/...

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