| 图片 |
型号 |
品牌 |
封装 |
数量 |
描述 |
PDF资料 |
|
PHD36N03LT,118 |
NXP Semiconductors |
DPAK |
|
MOSFET TAPE13 MOSFET |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,漏极连续电流:43.4 A,电阻汲极/源极 ... |
|
PHD37N06LT,118 |
NXP Semiconductors |
TO-252-3,DPak(2 引线 + 接片),SC-63 |
|
MOSFET TAPE13 PWR-MOS |
|
| 参数:制造商:NXP,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,漏极连续电流:37 A,电阻汲极/源极 RDS(导通):32 mOhms,配置:S... |
|
PHD34NQ10T,118 |
NXP Semiconductors |
TO-252-3,DPak(2 引线 + 接片),SC-63 |
|
MOSFET TAPE13 MOSFET |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,漏极连续电流:35 A,电阻汲极/源极 R... |
|
PHK04P02T /T3 |
NXP Semiconductors |
SO-8 |
|
MOSFET TAPE13 PWR-MOS |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 16 V,闸/源击穿电压:+/- 8 V,漏极连续... |
|
PHK04P02T,518 |
NXP Semiconductors |
8-SOIC(0.154",3.90mm 宽) |
|
MOSFET TAPE13 PWR-MOS |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 16 V,闸/源击穿电压:+/- 8 V,漏极连续... |
|
PHK12NQ03LT T/3 |
NXP Semiconductors |
SO-8 |
|
MOSFET TAPE13 MOSFET |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏极连续电... |
|
PHK12NQ03LT,518 |
NXP Semiconductors |
8-SO |
|
MOSFET TAPE13 MOSFET |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏极连续电... |
|
PHK12NQ10T /T3 |
NXP Semiconductors |
SO-8 |
|
MOSFET TAPE13 TRIAC |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏极连续... |
|
PHK12NQ10T,518 |
NXP Semiconductors |
8-SO |
|
MOSFET TAPE13 TRIAC |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏极连续... |
|
PHK13N03LT /T3 |
NXP Semiconductors |
SO-8 |
|
MOSFET TAPE13 MOSFET |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏极连续电... |
|
PHK13N03LT,518 |
NXP Semiconductors |
8-SO |
|
MOSFET TAPE13 MOSFET |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏极连续电... |
|
PHK18NQ03LT,518 |
NXP Semiconductors |
8-SO |
|
MOSFET MOSFET N-CH 30V 20.3A |
|
| 参数:制造商:NXP,RoHS:是,包装形式:Reel,工厂包装数量:2500,... |
|
PHK24NQ04LT /T3 |
NXP Semiconductors |
SO-8 |
|
MOSFET TAPE13 MOSFET |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:40 V,闸/源击穿电压:+/- 20 V,漏极连续电... |
|
PHK24NQ04LT,518 |
NXP Semiconductors |
8-SOIC(0.154",3.90mm 宽) |
|
MOSFET MOSFET N-CH 40V 21.2A |
|
| 参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:40 V,闸/源击穿电压:+/- 20 V,漏极连续电流:21.2 A,电阻汲... |
|
PHK28NQ03LT /T3 |
NXP Semiconductors |
SO-8 |
|
MOSFET TAPE13 PWR-MOS |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏极连续电... |
|
PHK28NQ03LT,518 |
NXP Semiconductors |
8-SO |
|
MOSFET TAPE13 PWR-MOS |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏极连续电... |
|
PHK31NQ03LT,518 |
NXP Semiconductors |
8-SO |
|
MOSFET MOSFET N-CH 30V 30.4A |
|
| 参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏极连续电流:30.4 A,电阻汲... |
|
PHK4NQ10T /T3 |
NXP Semiconductors |
SO-8 |
|
MOSFET TAPE13 PWR-MOS |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏极连续... |
|
PHK4NQ10T,518 |
NXP Semiconductors |
8-SO |
|
MOSFET N-CH TRENCHMOSTM TRANSISTOR |
|
| 参数:制造商:NXP,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏极连续电流:4 A,电阻汲极/... |
|
PHK4NQ20T /T3 |
NXP Semiconductors |
SO-8 |
|
MOSFET TAPE13 PWR-MOS |
|
| 参数:制造商:NXP,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:+/- 20 V,漏极连续... |