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Ixys

Ixys

IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a wide range of power system applications.
图片 型号 品牌 封装 数量 描述 PDF资料
点击查看VMM45-02F参考图片 VMM45-02F Ixys TO-240AA MOSFET 45 Amps 200V
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:+/- 20 V,漏极连续电流:45 A,电阻汲...
点击查看VMM650-01F参考图片 VMM650-01F Ixys Y3-Li MOSFET 650 Amps 100V
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏极连续电流:680 A,电阻...
VMM85-02F Ixys Y4-M6 MOSFET 85 Amps 200V
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:+/- 20 V,漏极连续电流:84 A,电阻汲...
VMO550-01F Ixys Y3-DCB 6 MOSFET 550 Amps 100V
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏极连续电流:590 A,电阻...
点击查看VMO580-02F参考图片 VMO580-02F Ixys Y3-Li 36 MOSFET HiperFET 200V 580A
参数:制造商:IXYS,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:+/- 20 V,漏极连...
点击查看VMO60-05F参考图片 VMO60-05F Ixys TO-240AA MOSFET 60 Amps 500V
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 20 V,漏极连续电流:60 A,电阻汲...
VMO650-01F Ixys Y3-DCB 2 MOSFET 650 Amps 100V
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏极连续电流:690 A,电阻...
点击查看VUM25-05E参考图片 VUM25-05E Ixys V1A-PAK 22 MOSFET 25 Amps 500V
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 20 V,漏极连续电流:35 A,电阻汲...
点击查看IXTP1R4N60P参考图片 IXTP1R4N60P Ixys TO-220-3 MOSFET 1.4 Amps 600 V 8 Ohm Rds
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 30 V,漏极连续电流:1.4 A,电阻...
点击查看IXTP1R6N100D2参考图片 IXTP1R6N100D2 Ixys TO-220-3 80 MOSFET N-CH MOSFETS (D2) 1000V 1.6A
参数:制造商:IXYS,RoHS:是,包装形式:Tube,...
点击查看IXTP1R6N50D2参考图片 IXTP1R6N50D2 Ixys TO-220-3 MOSFET N-CH MOSFETS (D2) 500V 1.6A
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:20 V,漏极连续电流:1.6 A,电阻汲极/源...
点击查看IXTP1R6N50P参考图片 IXTP1R6N50P Ixys TO-220-3 MOSFET 1.6 Amps 500 V 6 Ohm Rds
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏极连续电流:1.6 A,电阻...
点击查看IXTP200N055T2参考图片 IXTP200N055T2 Ixys TO-220-3 123 MOSFET 200 Amps 55V 0.0042 Rds
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,闸/源击穿电压:+/- 20 V,漏极连续电流:200 A,电阻汲...
点击查看IXTP200N075T参考图片 IXTP200N075T Ixys TO-220-3 MOSFET 200 Amps 75V 4.4 Rds
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:75 V,漏极连续电流:200 A,电阻汲极/源极 RDS(导通):0.00...
点击查看IXTP200N085T参考图片 IXTP200N085T Ixys TO-220-3 MOSFET MOSFET Id200 BVdass85
参数:制造商:IXYS,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:85 V,漏极连续电流:200 A,电阻汲极/源极 ...
点击查看IXTP220N04T2参考图片 IXTP220N04T2 Ixys TO-220-3 20 MOSFET 220 Amps 40V 0.0035 Rds
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:40 V,闸/源击穿电压:+/- 20 V,漏极连续电流:220 A,电阻汲...
点击查看IXTP220N055T参考图片 IXTP220N055T Ixys TO-220-3 MOSFET 220 Amps 55V 3.6 Rds
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,漏极连续电流:220 A,电阻汲极/源极 RDS(导通):0.00...
点击查看IXTP220N075T参考图片 IXTP220N075T Ixys TO-220-3 MOSFET MOSFET Id220 BVdass75
参数:制造商:IXYS,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:75 V,漏极连续电流:220 A,电阻汲极/源极 ...
点击查看IXTP230N075T2参考图片 IXTP230N075T2 Ixys TO-220-3 MOSFET 230 Amps 75V
参数:制造商:IXYS,RoHS:是,包装形式:Tube,工厂包装数量:50,...
点击查看IXTP240N055T参考图片 IXTP240N055T Ixys TO-220-3 MOSFET 240 Amps 55V 3.3 Rds
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,漏极连续电流:240 A,电阻汲极/源极 RDS(导通):0.00...

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