Ixys
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IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a wide range of power system applications. |
图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
---|---|---|---|---|---|---|
VMM45-02F | Ixys | TO-240AA | MOSFET 45 Amps 200V | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:+/- 20 V,漏极连续电流:45 A,电阻汲... | ||||||
VMM650-01F | Ixys | Y3-Li | MOSFET 650 Amps 100V | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏极连续电流:680 A,电阻... | ||||||
VMM85-02F | Ixys | Y4-M6 | MOSFET 85 Amps 200V | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:+/- 20 V,漏极连续电流:84 A,电阻汲... | ||||||
VMO550-01F | Ixys | Y3-DCB | 6 | MOSFET 550 Amps 100V | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏极连续电流:590 A,电阻... | ||||||
VMO580-02F | Ixys | Y3-Li | 36 | MOSFET HiperFET 200V 580A | ||
参数:制造商:IXYS,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:+/- 20 V,漏极连... | ||||||
VMO60-05F | Ixys | TO-240AA | MOSFET 60 Amps 500V | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 20 V,漏极连续电流:60 A,电阻汲... | ||||||
VMO650-01F | Ixys | Y3-DCB | 2 | MOSFET 650 Amps 100V | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏极连续电流:690 A,电阻... | ||||||
VUM25-05E | Ixys | V1A-PAK | 22 | MOSFET 25 Amps 500V | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 20 V,漏极连续电流:35 A,电阻汲... | ||||||
IXTP1R4N60P | Ixys | TO-220-3 | MOSFET 1.4 Amps 600 V 8 Ohm Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 30 V,漏极连续电流:1.4 A,电阻... | ||||||
IXTP1R6N100D2 | Ixys | TO-220-3 | 80 | MOSFET N-CH MOSFETS (D2) 1000V 1.6A | ||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,... | ||||||
IXTP1R6N50D2 | Ixys | TO-220-3 | MOSFET N-CH MOSFETS (D2) 500V 1.6A | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:20 V,漏极连续电流:1.6 A,电阻汲极/源... | ||||||
IXTP1R6N50P | Ixys | TO-220-3 | MOSFET 1.6 Amps 500 V 6 Ohm Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏极连续电流:1.6 A,电阻... | ||||||
IXTP200N055T2 | Ixys | TO-220-3 | 123 | MOSFET 200 Amps 55V 0.0042 Rds | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,闸/源击穿电压:+/- 20 V,漏极连续电流:200 A,电阻汲... | ||||||
IXTP200N075T | Ixys | TO-220-3 | MOSFET 200 Amps 75V 4.4 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:75 V,漏极连续电流:200 A,电阻汲极/源极 RDS(导通):0.00... | ||||||
IXTP200N085T | Ixys | TO-220-3 | MOSFET MOSFET Id200 BVdass85 | |||
参数:制造商:IXYS,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:85 V,漏极连续电流:200 A,电阻汲极/源极 ... | ||||||
IXTP220N04T2 | Ixys | TO-220-3 | 20 | MOSFET 220 Amps 40V 0.0035 Rds | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:40 V,闸/源击穿电压:+/- 20 V,漏极连续电流:220 A,电阻汲... | ||||||
IXTP220N055T | Ixys | TO-220-3 | MOSFET 220 Amps 55V 3.6 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,漏极连续电流:220 A,电阻汲极/源极 RDS(导通):0.00... | ||||||
IXTP220N075T | Ixys | TO-220-3 | MOSFET MOSFET Id220 BVdass75 | |||
参数:制造商:IXYS,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:75 V,漏极连续电流:220 A,电阻汲极/源极 ... | ||||||
IXTP230N075T2 | Ixys | TO-220-3 | MOSFET 230 Amps 75V | |||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,工厂包装数量:50,... | ||||||
IXTP240N055T | Ixys | TO-220-3 | MOSFET 240 Amps 55V 3.3 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,漏极连续电流:240 A,电阻汲极/源极 RDS(导通):0.00... |
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