Ixys
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IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a wide range of power system applications. |
图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
---|---|---|---|---|---|---|
MTI85W100GC-SMD | IXYS | ISOPLUS-DIL? | IGBT MOD MOSFET SIXPACK ISOPLUS | |||
参数:IXYS|管件|-|在售|MOSFET(金属氧化物)|6 N-沟道(3 相桥)|-|100V|120A(Tc)|4 毫欧 @ 80A,10V|3.5V @ 15... | ||||||
MTC120WX75GD-SMD | IXYS | ISOPLUS-DIL? | IGBT MOD MOSFET SIXPACK ISOPLUS | |||
参数:IXYS|管件|-|在售|MOSFET(金属氧化物)|6 N-沟道(3 相桥)|-|75V|180A(Tc)|3.1 毫欧 @ 100A,10V|4V @ 1m... | ||||||
MTI200WX75GD-SMD | IXYS | ISOPLUS-DIL? | IGBT MOD MOSFET SIXPACK ISOPLUS | |||
参数:IXYS|管件|-|在售|MOSFET(金属氧化物)|6 N-沟道(3 相桥)|-|75V|255A(Tc)|1.3 毫欧 @ 100A,10V|3.8V @ ... | ||||||
MTI145WX100GD-SMD | IXYS | ISOPLUS-DIL? | IGBT MOD MOSFET SIXPACK ISOPLUS | |||
参数:IXYS|管件|-|在售|MOSFET(金属氧化物)|6 N-沟道(3 相桥)|-|100V|190A(Tc)|2.2 毫欧 @ 100A,10V|3.5V @... | ||||||
MMIX2F60N50P3 | IXYS | 24-SMPD | MOSFET N-CH | |||
参数:IXYS|管件|HiPerFET?, Polar3?|在售|MOSFET(金属氧化物)|2 N-通道(双)|-|500V|30A(Tc)|110 毫欧 @ 30... | ||||||
IXFN27N120SK | IXYS | SOT-227B | SICARBIDE-DISCRETE MOSFET SOT-22 | |||
参数:IXYS|管件|-|在售|MOSFET(金属氧化物)|2 N-通道(双)|-|1200V(1.2kV)|-|-|-|-|-|-|-|底座安装|SOT-227-4... | ||||||
MCB20P1200LB-TRR | IXYS | 9-SMPD-B | MCB20P1200LB-TRR | |||
参数:IXYS|卷带(TR)|MCB20P1200LB|在售|MOSFET(金属氧化物)|4 N 沟道(半桥)|-|1200V(1.2kV)|-|-|-|-|-|-|... | ||||||
MCB20P1200LB-TUB | IXYS | 9-SMPD-B | MCB20P1200LB-TUB | |||
参数:IXYS|管件|MCB20P1200LB|在售|MOSFET(金属氧化物)|4 N 沟道(半桥)|-|1200V(1.2kV)|-|-|-|-|-|-|-|表面... | ||||||
MCB30P1200LB-TRR | IXYS | 9-SMPD-B | MCB30P1200LB-TRR | |||
参数:IXYS|卷带(TR)|MCB30P1200LB|在售|MOSFET(金属氧化物)|4 N 沟道(半桥)|-|1200V(1.2kV)|-|-|-|-|-|-|... | ||||||
IXFN130N90SK | IXYS | SOT-227B | SICARBIDE-DISCRETE MOSFET SOT-22 | |||
参数:IXYS|管件|-|在售|MOSFET(金属氧化物)|2 N-通道(双)|-|900V|-|-|-|-|-|-|-|底座安装|SOT-227-4,miniBLO... | ||||||
MCB30P1200LB-TUB | IXYS | 9-SMPD-B | MCB30P1200LB-TUB | |||
参数:IXYS|管件|MCB30P1200LB|在售|MOSFET(金属氧化物)|4 N 沟道(半桥)|-|1200V(1.2kV)|-|-|-|-|-|-|-|表面... | ||||||
MCB40P1200LB-TRR | IXYS | 9-SMPD-B | MCB40P1200LB-TRR | |||
参数:IXYS|卷带(TR)|MCB40P1200LB|在售|碳化硅(SiC)|2 N 沟道(双)共源|-|1200V(1.2kV)|58A|-|-|-|-|-|-|... | ||||||
MMPA60P1000TLA | IXYS | Y3-Li | MOSFET MODULE - PHASELEG Y3-LI | |||
参数:IXYS|盒|MMPA60P1000TLA|在售|MOSFET(金属氧化物)|2 N 沟道(相角)|-|1000V(1kV)|-|-|-|-|-|-|-|底座安... | ||||||
GWM120-0075P3 | IXYS | ISOPLUS-DIL? | MOSFET 6N-CH 75V 118A ISOPLUS | |||
参数:IXYS|管件|-|停产|MOSFET(金属氧化物)|6 N-沟道(3 相桥)|-|75V|118A|5.5 毫欧 @ 60A,10V|4V @ 1mA|100... | ||||||
FMM300-0055P | IXYS | ISOPLUS i4-PAC? | MOSFET 2N-CH 55V 300A I4-PAC-5 | |||
参数:IXYS|管件|-|停产|MOSFET(金属氧化物)|2 N-通道(双)|-|55V|300A|3.6 毫欧 @ 150A,10V|4V @ 2mA|172nC... | ||||||
GWM160-0055P3 | IXYS | ISOPLUS-DIL? | MOSFET 6N-CH 55V 160A ISODIL | |||
参数:IXYS|管件|-|停产|MOSFET(金属氧化物)|6 N-沟道(3 相桥)|-|55V|160A|3 毫欧 @ 100A,10V|4V @ 1mA|90nC... | ||||||
GWM70-01P2 | IXYS | ISOPLUS-DIL? | MOSFET 6N-CH 100V 70A ISODIL | |||
参数:IXYS|管件|-|停产|MOSFET(金属氧化物)|6 N-沟道(3 相桥)|-|100V|70A|14 毫欧 @ 35A,10V|4V @ 1mA|110n... | ||||||
GWM100-01X1-SLSAM | IXYS | ISOPLUS-DIL? | MOSFET 6N-CH 100V 90A ISOPLUS | |||
参数:IXYS|管件|-|在售|MOSFET(金属氧化物)|6 N-沟道(3 相桥)|-|100V|90A|8.5 毫欧 @ 80A,10V|4.5V @ 250μA... | ||||||
GWM100-01X1-SMDSAM | IXYS | ISOPLUS-DIL? | MOSFET 6N-CH 100V 90A ISOPLUS | |||
参数:IXYS|管件|-|在售|MOSFET(金属氧化物)|6 N-沟道(3 相桥)|-|100V|90A|8.5 毫欧 @ 80A,10V|4.5V @ 250μA... | ||||||
GWM120-0075X1-SLSAM | IXYS | ISOPLUS-DIL? | MOSFET 6N-CH 75V 110A ISOPLUS | |||
参数:IXYS|管件|-|停产|MOSFET(金属氧化物)|6 N-沟道(3 相桥)|-|75V|110A|4.9 毫欧 @ 60A,10V|4V @ 1mA|115... |
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