| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
NDT3055_J23Z | Fairchild Semiconductor | SOT-223 | MOSFET N-Channel FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... | ||||||
|
NDT3055L | Fairchild Semiconductor | TO-261-4，TO-261AA | MOSFET SOT-223 N-CH LOGIC | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... | ||||||
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NDT3055L_Q | Fairchild Semiconductor | SOT-223 | MOSFET SOT-223 N-CH LOGIC | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... | ||||||
|
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NDT410EL | Fairchild Semiconductor | SOT-223 | MOSFET DISC BY MFG 2/02 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电压：+/- 2... | ||||||
|
|
NDT451AN | Fairchild Semiconductor | TO-261-4，TO-261AA | 4,208 | MOSFET N-Channel FET Enhancement Mode | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
NDT451AN_J23Z | Fairchild Semiconductor | TO-236-3，SC-59，SOT-23-3 | MOSFET N-Channel FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
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|
NDT451AN_Q | Fairchild Semiconductor | SOT-223 | MOSFET N-Channel FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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NDT451N | Fairchild Semiconductor | SOT-223-4 | MOSFET DISC BY MFG 2/02 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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NDT451N_J23Z | Fairchild Semiconductor | SOT-223 | MOSFET DISC BY MFG 2/02 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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NDT452AP | Fairchild Semiconductor | TO-261-4，TO-261AA | 15 | MOSFET P-Channel FET Enhancement Mode | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，... | ||||||
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NDT452AP_J23Z | Fairchild Semiconductor | SOT-223 | MOSFET P-Channel FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，... | ||||||
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NDT452P | Fairchild Semiconductor | SOT-223-4 | MOSFET DISC BY MFG 2/02 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，闸/源击穿电压：+/- ... | ||||||
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NDT452P_J23Z | Fairchild Semiconductor | SOT-223 | MOSFET DISC BY MFG 2/02 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，闸/源击穿电压：+/- ... | ||||||
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NDT453N | Fairchild Semiconductor | SOT-223-4 | MOSFET 30V N-Channel FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
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|
NDT453N_J23Z | Fairchild Semiconductor | SOT-223 | MOSFET 30V N-Channel FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
NDT454P | Fairchild Semiconductor | SOT-223-4 | MOSFET P-Channel FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，... | ||||||
|
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NDT455N | Fairchild Semiconductor | SOT-223-4 | MOSFET SOT-223 N-CH ENHANCE | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
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NDT456P | Fairchild Semiconductor | TO-261-4，TO-261AA | 40 | MOSFET SOT-223 P-CH ENHANCE | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，... | ||||||
|
|
NDT456P_Q | Fairchild Semiconductor | SOT-223 | MOSFET SOT-223 P-CH ENHANCE | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，闸/源击穿电压：+/- ... | ||||||
|
NMLU1210TWG | ON Semiconductor | 8-UDFN 裸露焊盘 | 106 | MOSFET USR T3.0 N 30V MICRO8FL | |
| 参数：制造商：ON Semiconductor，产品种类：MOSFET，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/源击穿电压：10 V，漏极连... | ||||||
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