| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
NCV8440ASTT1G | ON Semiconductor | TO-261-4，TO-261AA | 1,434 | MOSFET 2.6A, 52V N-CH, CLAM | |
| 参数：制造商：ON Semiconductor，产品种类：MOSFET，包装形式：Reel，... | ||||||
|
NDB4050L | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET N-Ch LL FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：50 V，闸/源击穿电压：+/- 16... | ||||||
|
NDB4060 | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET N-Channel FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... | ||||||
|
NDB5060 | Fairchild Semiconductor | TO-263AB | MOSFET DISC BY MFG 2/02 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 20... | ||||||
|
NDB5060L | Fairchild Semiconductor | TO-263-3，D2Pak（2 引线 + 接片），TO-263AB | 1,470 | MOSFET N-Ch LL FET Enhancement Mode | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... | ||||||
|
|
NDB6020 | Fairchild Semiconductor | TO-263AB | MOSFET DISC BY MFG 2/02 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/源击穿电压：+/- 8 ... | ||||||
|
|
NDB6020P | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET P-Ch LL FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，... | ||||||
|
NDB6020P_Q | Fairchild Semiconductor | TO-263 | MOSFET P-Ch LL FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，闸/源击穿电压：+/- ... | ||||||
|
|
NDB6030 | Fairchild Semiconductor | TO-263AB | MOSFET DISC BY MFG 2/02 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
NDB6030L | Fairchild Semiconductor | TO-263AB | MOSFET N-Ch LL FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 16... | ||||||
|
|
NDB6030PL | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET P-Ch LL FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，... | ||||||
|
NDB603AL | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
NDB6050L | Fairchild Semiconductor | TO-263AB | MOSFET DISC BY MFG 2/02 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：50 V，闸/源击穿电压：+/- 16... | ||||||
|
NDB6060L | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET N-Ch LL FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... | ||||||
|
|
NDB6060L_Q | Fairchild Semiconductor | TO-263AB | MOSFET N-Ch LL FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 16... | ||||||
|
|
NDB7050 | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET DISC BY MFG 2/02 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：50 V，闸/源击穿电压：+/- 20... | ||||||
|
|
NDB7050L | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET DISC BY MFG 2/02 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：50 V，闸/源击穿电压：+/- 20... | ||||||
|
|
NDB7051 | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET N-Channel FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：50 V，闸/... | ||||||
|
|
NDB7052L | Fairchild Semiconductor | TO-263AB | MOSFET N-Ch LL FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：50 V，闸/源击穿电压：+/- 16... | ||||||
|
|
NDB7060 | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET N-Channel FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... | ||||||
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