| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
FQI60N03LTU | Fairchild Semiconductor | MOSFET | |||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，... | ||||||
|
|
FQI6N15TU | Fairchild Semiconductor | I2PAK | 997 | MOSFET N-CH/150V/6.3A/0.65OHM | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：150 V，闸... | ||||||
|
|
FQI6N40CTU | Fairchild Semiconductor | I2PAK | MOSFET N-CH/400 /6A/CFET | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：400 V，闸... | ||||||
|
FQI6N40TU | Fairchild Semiconductor | I2PAK | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：400 V，闸/源击穿电压：+/- 3... | ||||||
|
|
FQI6N45TU | Fairchild Semiconductor | I2PAK | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：450 V，闸/源击穿电压：+/- 3... | ||||||
|
FQI6N50TU | Fairchild Semiconductor | I2PAK（TO-262） | MOSFET 500V N-Ch QFET | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：500 V，闸... | ||||||
|
|
FQI6N60CTU | Fairchild Semiconductor | TO-262-3，长引线，I2Pak，TO-262AA | MOSFET 600V N-Channel Adv Q-FET C-Series | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸... | ||||||
|
|
FQI6N70TU | Fairchild Semiconductor | I2PAK | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：700 V，闸/源击穿电压：+/- 3... | ||||||
|
|
FQI6N90TU | Fairchild Semiconductor | I2PAK | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：900 V，闸/源击穿电压：+/- 3... | ||||||
|
|
FQI6P25TU | Fairchild Semiconductor | I2PAK | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 250 V，闸/源击穿电压：+/-... | ||||||
|
|
FQI70N08TU | Fairchild Semiconductor | I2PAK | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：80 V，闸/源击穿电压：+/- 25... | ||||||
|
|
FQI70N10TU | Fairchild Semiconductor | I2PAK | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电压：+/- 2... | ||||||
|
|
FQI7N10LTU | Fairchild Semiconductor | I2PAK（TO-262） | MOSFET 100V N-Ch QFET Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸... | ||||||
|
|
FQI7N10TU | Fairchild Semiconductor | I2PAK（TO-262） | MOSFET N-CH/100V/7.3A/0.35OHM | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸... | ||||||
|
|
FQI7N20LTU | Fairchild Semiconductor | I2PAK | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：200 V，闸/源击穿电压：+/- 2... | ||||||
|
|
FQI7N20TU | Fairchild Semiconductor | I2PAK | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：200 V，闸/源击穿电压：+/- 3... | ||||||
|
|
FQI7N40TU | Fairchild Semiconductor | I2PAK | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：400 V，闸/源击穿电压：+/- 3... | ||||||
|
|
FQI7N60TU | Fairchild Semiconductor | TO-262-3，长引线，I2Pak，TO-262AA | MOSFET 600V N-Channel QFET | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸... | ||||||
|
|
FQI7N80TU | Fairchild Semiconductor | TO-262-3，长引线，I2Pak，TO-262AA | 970 | MOSFET 800V N-Channel QFET | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：800 V，闸... | ||||||
|
|
FQI7P06TU | Fairchild Semiconductor | I2PAK（TO-262） | MOSFET 60V P-Channel QFET | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 60 V，... | ||||||
1130/1326 首页 上页 [1125] [1126] [1127] [1128] [1129] [1130] [1131] [1132] [1133] [1134] [1135] 下页 尾页
