Toshiba
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Toshiba America Electronic Components, Inc. (TAEC) is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer. Toshiba is a global leader in the design and manufacture of high-quality Flash memory-based storage solutions, discrete devices, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers (MCUs), and wireless components.Toshiba products are ideal for automotive, imaging, LED lighting, mobile, multimedia, and wireless applications. |
| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
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SSM3K7002FUT5LF | Toshiba | USM | 2007 | MOSFET Small-signal MOSFET 60V, 150mW | |
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 20 V，漏... | ||||||
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SSM4K27CT | Toshiba | ES-6-4 | MOSFET Vds=20V Id=500mA 4Pin | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/源击穿电压：+/- 12 V，漏... | ||||||
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SSM6J06FU | Toshiba | MOSFET INCORRECT MOUSER P/N 6Pin | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，... | ||||||
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SSM6J06FU(TE85L,F) | Toshiba | ES-6 | MOSFET Vds=-20V Id=-1.1A 6Pin | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，漏极连续电流：- 650 mA，... | ||||||
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SSM6J07FUTE85LF | Toshiba | ES-6 | 2 | MOSFET Vds=-30V Id=-800mA 6Pin | |
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 8 V，漏极... | ||||||
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SSM6J08FUTE85LF | Toshiba | ES-6 | MOSFET Vds=-20V Id=-1.3A 6Pin | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，漏极连续电流：- 1.3 A，电... | ||||||
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SSM6J205FE | Toshiba | ES-6 | MOSFET Vds=-20V Id=-800mA 6Pin | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：20 V，闸/源击穿电压：+/- 8 V，漏极... | ||||||
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SSM6J205FE(TE85L,F | Toshiba | SOT-563 | MOSFET Singel P-ch 20V 0.8A | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：20 V，闸/源击穿电压：+/- 8 V，漏极... | ||||||
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SSM6J206FE | Toshiba | MOSFET INCORRECT MOUSER P/N 6Pin | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，... | ||||||
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SSM6J207FE | Toshiba | MOSFET INCORRECT MOUSER P/N 6Pin | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，... | ||||||
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SSM6J207FE(TE85L,F | Toshiba | SOT-563 | 223 | MOSFET Vds=-30V Id=-1.4A 6Pin | |
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，漏极连续电流：- 1.4 A，电... | ||||||
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SSM6J212FE,LF | Toshiba | SOT-563，SOT-666 | MOSFET P-Ch U-MOS VI FET ID -4A -20VDSS 500mW | ||
| 参数：制造商：Toshiba，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，闸/源击穿电压：8 V，漏极连续电流：- 4 A，电阻汲... | ||||||
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SSM6J213FE(TE85L,F | Toshiba | SOT-563，SOT-666 | MOSFET P-Ch U-MOS VI FET ID -2.6A -20V 290pF | ||
| 参数：制造商：Toshiba，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，闸/源击穿电压：8 V，漏极连续电流：- 2.6 A，电... | ||||||
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SSM6J215FE(TE85L,F | Toshiba | SOT-563，SOT-666 | 447 | MOSFET P-Ch U-MOS VI FET ID -3.4A -20V 630pF | |
| 参数：制造商：Toshiba，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，闸/源击穿电压：8 V，漏极连续电流：- 3.4 A，电... | ||||||
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SSM6J21TUTE85LF | Toshiba | ES-6 | MOSFET Vds=-12V Id=-3A 6Pin | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 12 V，漏极连续电流：- 3 A，电阻汲... | ||||||
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SSM6J23FE | Toshiba | ES-6 | MOSFET Vds=-12V Id=1.2A 6Pin | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：12 V，闸/源击穿电压：+/- 8 V，漏极... | ||||||
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SSM6J25FE | Toshiba | MOSFET INCORRECT MOUSER P/N 6Pin | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，... | ||||||
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SSM6J25FE(TE85L,F) | Toshiba | ES-6 | 3314 | MOSFET Vds=-20V Id=500mA 6Pin | |
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，漏极连续电流：- 0.5 A，电... | ||||||
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SSM6J26FE | Toshiba | MOSFET INCORRECT MOUSER P/N 6Pin | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，... | ||||||
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SSM6J26FE(TE85L,F) | Toshiba | ES-6 | 1630 | MOSFET Vds=-20V Id=500mA 6Pin | |
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，漏极连续电流：- 0.5 A，电... | ||||||
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