Toshiba
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Toshiba America Electronic Components, Inc. (TAEC) is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer. Toshiba is a global leader in the design and manufacture of high-quality Flash memory-based storage solutions, discrete devices, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers (MCUs), and wireless components.Toshiba products are ideal for automotive, imaging, LED lighting, mobile, multimedia, and wireless applications. |
| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
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TPC8221-H,LQ(S | Toshiba | 8-SOP | MOSFET MOSFET, Dual, SOP-8 | ||
| 参数：制造商：Toshiba，... | ||||||
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TPC8221-HLQ(S | Toshiba | MOSFET N-Ch Dual 30V 6A 1.5W 12nC 0.029 | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Reel，... | ||||||
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TPC8223-H,LQ(S | Toshiba | 8-SOP | MOSFET N-Ch Dual 30V 9A 1.5W 1190pF | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Reel，... | ||||||
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TPC8404(TE12L,Q) | Toshiba | SOP-8 | MOSFET MOSFET N-Ch PCh 250V 1.1A Nch 0.9A Pch | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：250 V，闸/源击穿电压：+/-... | ||||||
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TPC8405(TE12L,Q,M) | Toshiba | 8-SOP（5.5x6.0） | MOSFET MOSFET N-Ch P-Ch 30V | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：- 30 V，电阻汲极/源极 RD... | ||||||
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TPC8406-H(TE12LQ,M | Toshiba | SOP-8 | MOSFET MOSFET N-Ch P-Ch 40V | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：40 V，闸/源击穿电压：+/- ... | ||||||
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TPC8407,LQ(S | Toshiba | 8-SOP | MOSFET N and P Ch 30V FET 9A 1.5W 1190pF | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Reel，... | ||||||
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TPC8408,LQ(S | Toshiba | 8-SOP | MOSFET N and P Ch 40V FET 6.1A 1.5W 850pF | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Reel，... | ||||||
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TPC8A01(TE12L,Q) | Toshiba | SOP-8 | 151 | MOSFET PW TR with SBD 30v 8.6A 1.5W 11mOhms | |
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20 V，漏... | ||||||
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TPC8A02-H(TE12L,Q) | Toshiba | 8-SOIC（0.173"，4.40mm 宽） | MOSFET MOSFET N-Ch SBD 30V 16A | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20 V，漏... | ||||||
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TPC8A02-H(TE12LQM) | Toshiba | MOSFET N-ch 30V 16A SOP-8 | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Reel，... | ||||||
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TPC8A03-H(TE12LQM) | Toshiba | SOP-8 | MOSFET MOSFET N-ch/SBD 30V 15A | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20 V，漏... | ||||||
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TPC8A04-H(TE12L,Q) | Toshiba | SOP-8 | MOSFET MOSFET N-ch/SBD 30V 18A | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20 V，漏极连续电流：18 A，配置：Si... | ||||||
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TPC8A04-H(TE12L,QM | Toshiba | MOSFET N-ch 30V 18A SOP-8 | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Reel，... | ||||||
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TPC8A05-H(TE12L,QM | Toshiba | 8-SOP（5.5x6.0） | MOSFET MOSFET+SBD, 30V, 10A, SOP-8 | ||
| 参数：制造商：Toshiba，... | ||||||
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TPC8A05-H(TE12LQM | Toshiba | MOSFET N-Ch 30V FET 10A 1.9W 15nC | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Reel，... | ||||||
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TPC8A06-H(TE12LQM) | Toshiba | 8-SOP（5.5x6.0） | MOSFET N-Ch 30V FET 12A 1.9W 19nC 0.0129 | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Reel，... | ||||||
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TPCA8003-H(TE12LQM | Toshiba | 8-PowerVDFN | MOSFET PW TR N-Ch 30V 40A 45W 5.1mOhms | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20 V，漏... | ||||||
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TPCA8004-H(TE12LQM | Toshiba | SOP-8 | MOSFET Promotions N-Ch 30V 40A 45W 3.5mOhms | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20 V，漏... | ||||||
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TPCA8005-H(TE12LQM | Toshiba | 8-PowerVDFN | MOSFET MOSFET N-Ch 30V 27A Rdson=0.009Ohm | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20 V，漏... | ||||||
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