STMicroelectronics
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends |
| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
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STP28NM50N | STMicroelectronics | TO-220 | MOSFET N-Ch 500V 0.135 21A MDmesh II | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：500 V，漏极连续电流... | ||||||
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STP2N62K3 | STMicroelectronics | TO-220-3 | 1,635 | MOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH3 | |
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：620 V，闸/源击穿电... | ||||||
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STP2NK100Z | STMicroelectronics | TO-220 | MOSFET N-Channel 1000V Zener SuperMESH | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：1000 V，闸/源击穿... | ||||||
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STP2NK60Z | STMicroelectronics | TO-220 | MOSFET N-Ch 600 Volt 1.4Amp 511-STP22NF03L | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸/源击穿电... | ||||||
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STP2NK90Z | STMicroelectronics | TO-220 | MOSFET N-Ch 900 Volt 2.1Amp Zener SuperMESH | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：900 V，闸/源击穿电... | ||||||
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STP300NH02L | STMicroelectronics | TO-220-3 | MOSFET N Ch 600V 19A Pwr MESH IGBT | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：24 V，闸/源击穿电压... | ||||||
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STP30N20 | STMicroelectronics | TO-220 | MOSFET Power MOSFET | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：200 V，闸/源击穿电... | ||||||
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STP30N65M5 | STMicroelectronics | TO-220-3 | 6,350 | MOSFET N-channel 650 V MDMesh | |
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：650 V，闸/源击穿电... | ||||||
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STP30NE06 | STMicroelectronics | TO-220 | MOSFET RO 511-STP36NF06 | ||
| 参数：制造商：STMicroelectronics，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 20 V，漏极... | ||||||
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STP30NE06L | STMicroelectronics | TO-220 | MOSFET N-Ch 60 Volt 30 Amp | ||
| 参数：制造商：STMicroelectronics，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 20 V，漏极... | ||||||
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STP30NF10 | STMicroelectronics | TO-220 | MOSFET N-Ch 100 Volt 35 Amp | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电... | ||||||
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STP30NF20 | STMicroelectronics | TO-220 | MOSFET Low charge STripFET | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：200 V，闸/源击穿电... | ||||||
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STP30NM30N | STMicroelectronics | TO-220-3 | MOSFET N Ch 300V Mdmesh 30A | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：300 V，闸/源击穿电... | ||||||
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STP30NM50N | STMicroelectronics | TO-220-3 | MOSFET N-Ch 500 Volt Amp Power MDmesh | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：500 V，闸/源击穿电... | ||||||
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STP30NM60N | STMicroelectronics | TO-220-3 | MOSFET N-channel 600V, 25A Power II Mdmesh | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸/源击穿电... | ||||||
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STP30NM60ND | STMicroelectronics | TO-220-3 | MOSFET N-channel 600V, 25A FDMesh II | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸/源击穿电... | ||||||
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STP310N10F7 | STMicroelectronics | TO-220-3 | MOSFET N-Ch 100V 2.3 mOhm 180A STripFET VII | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电... | ||||||
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STP31N65M5 | STMicroelectronics | TO-220-3 | 1,230 | MOSFET N-Ch 650V 0.124 Ohm 22 A MDmesh V | |
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：650 V，漏极连续电流... | ||||||
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STP32N65M5 | STMicroelectronics | TO-220-3 | 360 | MOSFET N-channel 650 V MDMesh | |
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：650 V，漏极连续电流... | ||||||
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STP32NM50N | STMicroelectronics | TO-220-3 | 105 | MOSFET N-Ch 500V 0.1 Ohm 22A MDmesh II FET | |
| 参数：制造商：STMicroelectronics，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：500 V，闸/源击穿电压：25 V，漏极连续电... | ||||||
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