Fairchild Semiconductor
|
| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
FDC6401N_Q | Fairchild Semiconductor | SSOT-6 | MOSFET Dual N-Ch 2.5V Spec Power Trench | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/... | ||||||
|
FDC640P | Fairchild Semiconductor | SOT-23-6 细型，TSOT-23-6 | 1,815 | MOSFET SSOT-6 P-CH -20V | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，... | ||||||
|
|
FDC640P_F095 | Fairchild Semiconductor | SuperSOT?-6 | MOSFET 2.5V P-CH POWERTRENCH | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：20 V，闸/... | ||||||
|
|
FDC6420C | Fairchild Semiconductor | SuperSOT?-6 | MOSFET 20V/-20V N/P | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：+... | ||||||
|
|
FDC6420C_Q | Fairchild Semiconductor | SSOT-6 | MOSFET 20V/-20V N/P | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N and P-Channel，汲极/源极击穿电压：+/- 20 V，闸/源击... | ||||||
|
FDC642P | Fairchild Semiconductor | SOT-23-6 细型，TSOT-23-6 | 7,390 | MOSFET SSOT-6 P-CH -20V | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，... | ||||||
|
|
FDC642P_F085 | Fairchild Semiconductor | SSOT-6 | MOSFET P-CHANNEL 2.5V PowerTrench MOS | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，... | ||||||
|
|
FDC6432SH | Fairchild Semiconductor | SuperSOT?-6 | MOSFET 12V P-Channel PowerTrench | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 12 V，... | ||||||
|
|
FDC645N | Fairchild Semiconductor | SuperSOT?-6 | 5 | MOSFET SSOT-6 N-CH | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
FDC645N_F095 | Fairchild Semiconductor | SuperSOT?-6 | MOSFET 30V 5.5A N-CH POWERTRENCH | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
FDC6506P | Fairchild Semiconductor | SuperSOT?-6 | MOSFET SSOT-6 P-CH -30V | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，... | ||||||
|
|
FDC6506P_Q | Fairchild Semiconductor | SSOT-6 | MOSFET SSOT-6 P-CH -30V | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，... | ||||||
|
|
FDC653N | Fairchild Semiconductor | SOT-23-6 细型，TSOT-23-6 | MOSFET SSOT-6 N-CH 30V | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
FDC653N_F095 | Fairchild Semiconductor | SuperSOT-6 | MOSFET 30V 5A N-CH ENHANCEMENT MODE | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
FDC654P | Fairchild Semiconductor | SuperSOT?-6 | MOSFET SSOT-6 P-CH -30V | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，... | ||||||
|
|
FDC655AN | Fairchild Semiconductor | SuperSOT?-6 | MOSFET SSOT-6 N-CH 30V | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
FDC655AN_F095 | Fairchild Semiconductor | SuperSOT-6 | MOSFET 30V 6.3A N-CH POWERTRENCH | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
FDC655BN | Fairchild Semiconductor | SOT-23-6 细型，TSOT-23-6 | 4,159 | MOSFET SINGLE NCH LOG LVEL PWR TRENCH MOSFET | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
FDC655BN_F123 | Fairchild Semiconductor | SSOT-6 | MOSFET 30V N-CHAN 0.025Ohms | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，电阻汲极/源极 RDS（导通... | ||||||
|
|
FDC6561AN | Fairchild Semiconductor | SuperSOT?-6 | 1 | MOSFET SSOT-6 N-CH 30V | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
86/225 首页 上页 [81] [82] [83] [84] [85] [86] [87] [88] [89] [90] [91] 下页 尾页
