Fairchild Semiconductor
|
| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
FDB6670AS | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET 30V N-Channel PT SyncFET | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
FDB6670S | Fairchild Semiconductor | TO-263AB | MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：过渡期间，晶体管极性：N-Channel，汲极/源极击穿电压：30 V... | ||||||
|
FDB6676 | Fairchild Semiconductor | TO-263AB | MOSFET 30V N-Ch PowerTrench Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 16... | ||||||
|
|
FDB6676S | Fairchild Semiconductor | TO-263AB | MOSFET 30V N-Ch PowerTrench Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 16... | ||||||
|
|
FDB6676S_Q | Fairchild Semiconductor | TO-263AB | 762 | MOSFET 30V N-Ch PowerTrench Logic Level | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
FDB6690S | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET 30V N-Ch PowerTrench SyncFET | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
FDB6690S_Q | Fairchild Semiconductor | TO-263AB | MOSFET 30V N-Ch PowerTrench SyncFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
FDB66N15TM | Fairchild Semiconductor | D2PAK | MOSFET 150V N-Ch MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：150 V，闸... | ||||||
|
|
FDB7030BL | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET N-Ch PowerTrench Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
FDB7030BL_Q | Fairchild Semiconductor | TO-263 | MOSFET N-Ch PowerTrench Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
FDB7030BLS | Fairchild Semiconductor | TO-263AB | MOSFET N-Ch PowerTrench Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
FDB7030L | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET N-Ch PowerTrench Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
FDB7030L_L86Z | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET N-Ch PowerTrench Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
FDB7030L_Q | Fairchild Semiconductor | TO-263AB | MOSFET N-Ch PowerTrench Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
FDB7042L | Fairchild Semiconductor | TO-263AB | MOSFET N-Ch PowerTrench Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 12... | ||||||
|
|
FDB7045L | Fairchild Semiconductor | TO-263AB | MOSFET N-Ch PowerTrench Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
FDB7045L_Q | Fairchild Semiconductor | TO-263AB | MOSFET N-Ch PowerTrench Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
FDB8030L | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET N-Ch PowerTrench Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
FDB8132_F085 | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET 30V N-CHAN PwrTrench | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，漏极连续电流：80 A，电阻... | ||||||
|
FDB8160_F085 | Fairchild Semiconductor | TO-263AB | MOSFET 30V N-Channel PowerTrench MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：20 V，漏... | ||||||
82/225 首页 上页 [77] [78] [79] [80] [81] [82] [83] [84] [85] [86] [87] 下页 尾页
