Fairchild Semiconductor
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| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
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ISL9N303AP3 | Fairchild Semiconductor | TO-220-3 | MOSFET N-Ch UltraFET Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
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ISL9N303AP3_Q | Fairchild Semiconductor | TO-220AB | MOSFET N-Ch UltraFET Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
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ISL9N303AS3 | Fairchild Semiconductor | TO-262-3，长引线，I2Pak，TO-262AA | MOSFET 30V 75a 0.0032 Ohm N-Channel | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
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ISL9N303AS3ST | Fairchild Semiconductor | TO-263-3，D2Pak（2 引线 + 接片），TO-263AB | MOSFET N-Ch UltraFET Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
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ISL9N304AP3 | Fairchild Semiconductor | TO-220AB | 60 | MOSFET 30V 75a 4.5 Ohm Logic Level N-Ch | |
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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ISL9N304AP3_NF060 | Fairchild Semiconductor | TO-220AB | MOSFET Single, N-Ch 30V, 0.0045Ohm | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
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ISL9N304AS3ST | Fairchild Semiconductor | TO-263AB | MOSFET 30V 75a 4.5 Ohm Logic Level N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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ISL9N306AD3 | Fairchild Semiconductor | TO-251 | MOSFET 30V N-Channel Logic Level PWM | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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ISL9N306AD3ST | Fairchild Semiconductor | TO-252AA | MOSFET N-Ch LL UltraFET PWM Optimized | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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ISL9N306AP3 | Fairchild Semiconductor | TO-220AB | MOSFET N-Ch LL UltraFET PWM Optimized | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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ISL9N306AS3ST | Fairchild Semiconductor | TO-263AB | MOSFET N-Ch LL UltraFET PWM Optimized | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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ISL9N306AW1 | Fairchild Semiconductor | MOSFET | |||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，... | ||||||
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ISL9N307AD3ST | Fairchild Semiconductor | TO-252AA | MOSFET N-Ch LL UltraFET PWM Optimized | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
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ISL9N307AP3 | Fairchild Semiconductor | TO-220AB | MOSFET N-Ch LL UltraFET PWM Optimized | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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ISL9N307AS3ST | Fairchild Semiconductor | TO-263AB | MOSFET N-Ch LL UltraFET PWM Optimized | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
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ISL9N308AD3 | Fairchild Semiconductor | TO-251 | MOSFET N-Ch UltraFET Trench Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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ISL9N308AD3ST | Fairchild Semiconductor | TO-252AA | MOSFET N-Ch UltraFET Trench Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
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ISL9N308AP3 | Fairchild Semiconductor | TO-220AB | MOSFET N-Ch Trench MOSFET Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
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ISL9N308AS3ST | Fairchild Semiconductor | TO-263AB | MOSFET N-Ch UltraFET Trench Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
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ISL9N310AD3 | Fairchild Semiconductor | TO-251 | MOSFET N-Ch LL UltraFET PWM Optimized | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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