| 图片 |
型号 |
品牌 |
封装 |
数量 |
描述 |
PDF资料 |
|
BSS84W-7-F |
Diodes Inc. |
SC-70,SOT-323 |
822,695 |
MOSFET -50V 200mW |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 75 V,闸/源击穿电压:+/- ... |
|
2N7002-7 |
Diodes Inc. |
TO-236-3,SC-59,SOT-23-3 |
|
MOSFET 60V 200mW |
|
| 参数:制造商:Diodes Inc.,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:70 V,闸/源击穿电压:+/- 20 V,漏极连续电流:11... |
|
2N7002-7-F |
Diodes Inc. |
TO-236-3,SC-59,SOT-23-3 |
1,678,945 |
MOSFET 60V 200mW |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:70 V,闸/源击穿电压:+/- 20... |
|
2N7002A-7 |
Diodes Inc. |
TO-236-3,SC-59,SOT-23-3 |
|
MOSFET N-CHANNEL ENHANCEMENT MODE |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20... |
|
2N7002DW-7 |
Diodes Inc. |
SOT-363 |
|
MOSFET 60V 200mW |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20... |
|
2N7002DW-7-F |
Diodes Inc. |
SOT-363 |
|
MOSFET 60V 200mW |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:70 V,闸/源击穿电压:+/- 20... |
|
2N7002E-7 |
Diodes Inc. |
SOT-23-3 |
|
MOSFET N-Channel |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20... |
|
2N7002E-7-F |
Diodes Inc. |
TO-236-3,SC-59,SOT-23-3 |
|
MOSFET N-Channel |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:过渡期间,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/-... |
|
2N7002K-7 |
Diodes Inc. |
TO-236-3,SC-59,SOT-23-3 |
1,081,746 |
MOSFET N-Channel |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20... |
|
2N7002T-7 |
Diodes Inc. |
SOT-523 |
|
MOSFET 60V 150mW |
|
| 参数:制造商:Diodes Inc.,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20 V,漏极连续电流:11... |
|
2N7002T-7-F |
Diodes Inc. |
SOT-523 |
106,856 |
MOSFET 60V 150mW |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20... |
|
2N7002V-7 |
Diodes Inc. |
SOT-563 |
|
MOSFET 60V 150mW |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20... |
|
2N7002V-7-F |
Diodes Inc. |
SOT-563 |
|
MOSFET 60V 150mW |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:70 V,闸/源击穿电压:+/- 20... |
|
2N7002VA-7 |
Diodes Inc. |
SOT-563 |
905 |
MOSFET 60V 150mW |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:过渡期间,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/-... |
|
2N7002VA-7-F |
Diodes Inc. |
SOT-563 |
|
MOSFET 60V 150mW |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:70 V,闸/源击穿电压:+/- 20... |
|
2N7002VAC-7 |
Diodes Inc. |
SOT-563 |
12,000 |
MOSFET Dual N-Channel |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20... |
|
2N7002VC-7 |
Diodes Inc. |
SOT-563 |
4,790 |
MOSFET Dual N-Channel |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20... |
|
2N7002W-7 |
Diodes Inc. |
SC-70,SOT-323 |
|
MOSFET 60V 200mW |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:70 V,闸/源击穿电压:+/- 20... |
|
2N7002W-7-F |
Diodes Inc. |
SC-70,SOT-323 |
1,368,771 |
MOSFET 60V 200mW |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:70 V,闸/源击穿电压:+/- 20... |
|
GDZ8V2LP3-7 |
Diodes Inc. |
X3-DFN0603-2 |
|
MOSFET Zener Diode X3-DFN06 X3-DFN0603-2 T&R 10K |
|
| 参数:制造商:Diodes Inc.,RoHS:是,包装形式:Reel,... |