Diodes Inc. / Zetex
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| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
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ZXMD63P02XTA | Diodes Inc. / Zetex | 8-MSOP | MOSFET Dual 20V P Chl HDMOS | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，闸/源击穿电压：+/- ... | ||||||
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ZXMD63P02XTC | Diodes Inc. / Zetex | 8-MSOP | MOSFET Dual 20V P Chl HDMOS | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，闸/源击穿电压：+/- ... | ||||||
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ZXMD63P03XTC | Diodes Inc. / Zetex | 8-MSOP | MOSFET Dual 30V P Chl HDMOS | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，闸/源击穿电压：+/- ... | ||||||
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ZXMD65P02N8TA | Diodes Inc. / Zetex | 8-SO | MOSFET Dl 20V P-Chnl HDMOS | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：过渡期间，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，闸/源击穿电压：+... | ||||||
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ZXMD65P02N8TC | Diodes Inc. / Zetex | 8-SO | MOSFET Dual 20V P Chl HDMOS | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，闸/源击穿电压：+/- ... | ||||||
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ZXMD65P03N8TC | Diodes Inc. / Zetex | SOIC-8 | MOSFET Dual 30V P Chl HDMOS | ||
| 参数：制造商：Diodes Inc.，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：20 V，漏极连续电流：4.8 A，... | ||||||
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ZXMHC10A07N8TC | Diodes Inc. / Zetex | 8-SO | 21,980 | MOSFET Mosfet H-Bridge 100/-100 1.1/-0.9 | |
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：100 V，漏极连续电流：... | ||||||
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ZXMHC10A07T8TA | Diodes Inc. / Zetex | SM8 | MOSFET 100V 1.4A N-Channel MOSFET H-Bridge | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：100 V，漏极连续电流：... | ||||||
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ZXMHC3A01N8TC | Diodes Inc. / Zetex | 8-SO | 26,497 | MOSFET Mosfet H-Bridge 30/-30V 2.7/-2.1A | |
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：- 30 V, 30 V，... | ||||||
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ZXMHC3A01T8TA | Diodes Inc. / Zetex | SM8 | 14,340 | MOSFET 30/30V 3.1/2.3A N & P Channel | |
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：30 V, - 30 V，... | ||||||
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ZXMHC3F381N8TC | Diodes Inc. / Zetex | 8-SO | 130,703 | MOSFET MOSFET H-BRIDGE SOP-8L | |
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：30 V，漏极连续电流：4... | ||||||
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ZXMHC6A07N8TC | Diodes Inc. / Zetex | 8-SO | MOSFET Mosfet H-Bridge 60/-60V 1.8/-1.4A | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：60 V，漏极连续电流：1... | ||||||
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ZXMHC6A07T8TA | Diodes Inc. / Zetex | SM8 | MOSFET 60V UMOS H-Bridge | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：60 V，漏极连续电流：1... | ||||||
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ZXMN0545G4TA | Diodes Inc. / Zetex | SOT-223-3 | MOSFET 450V 140mA N-Channel Enhancement MOSFET | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：450 V，闸/源击穿电压：+/- 2... | ||||||
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ZXMN10A07FTA | Diodes Inc. / Zetex | SOT-23-3 | MOSFET 100V N-Chnl UMOS | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电压：+/- 2... | ||||||
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ZXMN10A07FTC | Diodes Inc. / Zetex | TO-236-3，SC-59，SOT-23-3 | MOSFET 100V N-Chnl UMOS | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电压：+/- 2... | ||||||
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ZXMN10A07ZTA | Diodes Inc. / Zetex | SOT-89-3 | MOSFET 100V N-Chnl UMOS | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电压：+/- 2... | ||||||
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ZXMN10A08DN8TA | Diodes Inc. / Zetex | 8-SO | MOSFET 100V 2.1A N-Channel Enhancement MOSFET | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电压：+/- 2... | ||||||
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ZXMN10A08E6TA | Diodes Inc. / Zetex | SOT-23-6 | 1,796 | MOSFET 100V N-Chnl UMOS | |
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电压：+/- 2... | ||||||
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ZXMN10A08GTA | Diodes Inc. / Zetex | TO-261-4，TO-261AA | 3,445 | MOSFET 100V N-Channel 2A MOSFET | |
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电压：+/- 2... | ||||||
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