| 图片 |
型号 |
品牌 |
封装 |
数量 |
描述 |
PDF资料 |
|
MAX2602ESA-T |
Maxim Integrated
|
8-SOIC-EP |
|
射频双极电源晶体管 3.6V 1W RF Pwr Trans for 900MHz Ap |
|
| 参数:制造商:Maxim Integrated,配置:Single Dual Base Dual Collector Quad Emitter,直流集电极/Base ... |
|
MMBT3906-G |
Comchip Technology
|
SOT-23-3 |
87,904 |
射频双极电源晶体管 VCEO=40V IC=100mA |
|
| 参数:Comchip Technology|卷带(TR),剪切带(CT),Digi-Reel 得捷定制卷带|-|在售|PNP|200 mA|40 V|400mV @ ... |
|
MMBT3904-G |
Comchip Technology
|
SOT-23-3 |
133,644 |
射频双极电源晶体管 VCEO=40V IC=200mA |
|
| 参数:Comchip Technology|卷带(TR),剪切带(CT),Digi-Reel 得捷定制卷带|-|在售|NPN|200 mA|40 V|300mV @ ... |
|
MMBT2907A-G |
Comchip Technology
|
SOT-23-3 |
165,765 |
射频双极电源晶体管 VCEO=60V IC=600mA |
|
| 参数:Comchip Technology|卷带(TR),剪切带(CT),Digi-Reel 得捷定制卷带|-|在售|PNP|600 mA|60 V|1.6V @ 5... |
|
MMBT2222A-G |
Comchip Technology
|
SOT-23-3 |
93,293 |
射频双极电源晶体管 VCEO=40V IC=600mA |
|
| 参数:Comchip Technology|卷带(TR),剪切带(CT),Digi-Reel 得捷定制卷带|-|在售|NPN|600 mA|40 V|1V @ 50m... |
|
MMBT3906-HF |
Comchip Technology
|
SOT-23-3 |
359,630 |
射频双极电源晶体管 Transistor I=-200mA |
|
| 参数:Comchip Technology|卷带(TR),剪切带(CT),Digi-Reel 得捷定制卷带|-|在售|PNP|200 mA|40 V|300mV @ ... |
|
MMBT5551-G |
Comchip Technology
|
|
|
射频双极电源晶体管 VCEO=160V IC=600mA |
|
| 参数:制造商:Comchip Technology,RoHS:是,... |
|
MMBT5401-G |
Comchip Technology
|
SOT-23-3 |
12,332 |
射频双极电源晶体管 VCEO=-150V IC=-600mA |
|
| 参数:Comchip Technology|卷带(TR),剪切带(CT),Digi-Reel 得捷定制卷带|-|在售|PNP|600 mA|150 V|500mV @... |
|
MMBT3904-HF |
Comchip Technology
|
|
|
射频双极电源晶体管 I=200mA |
|
| 参数:制造商:Comchip Technology,RoHS:是,... |
|
MMBT2907A-HF |
Comchip Technology
|
SOT-23-3 |
|
射频双极电源晶体管 VCEO=60V IC=600mA |
|
| 参数:Comchip Technology|卷带(TR)|-|在售|PNP|600 mA|60 V|1.6V @ 50mA,500mA|50nA|100 @ 150m... |
|
MMBT4403-G |
Comchip Technology
|
SOT-23-3 |
|
射频双极电源晶体管 VCEO=-40V IC=-600mA. |
|
| 参数:Comchip Technology|卷带(TR)|-|在售|PNP|600 mA|40 V|400mV @ 15mA,150mA|100μA|100 @ 15... |
|
MMBT4401-G |
Comchip Technology
|
|
|
射频双极电源晶体管 VCEO=40V IC=600mA |
|
| 参数:制造商:Comchip Technology,RoHS:是,... |
|
MCH4014-TL-H |
ON Semiconductor
|
4-MCPH |
2,847 |
射频双极电源晶体管 HIGH FREQUENCY AMPLIFIER |
|
| 参数:制造商:ON Semiconductor,RoHS:是,包装形式:Reel,... |
|
MCH4015-TL-H |
ON Semiconductor
|
4-MCPH |
3,515 |
射频双极电源晶体管 HIGH FREQUENCY AMPLIFIER |
|
| 参数:制造商:ON Semiconductor,RoHS:是,包装形式:Reel,... |
|
MCH4016-TL-H |
ON Semiconductor
|
4-MCPH |
|
射频双极电源晶体管 HIGH-FREQUENCY TR |
|
| 参数:制造商:ON Semiconductor,RoHS:是,包装形式:Reel,... |
|
MS1000 |
Advanced Semiconductor, Inc.
|
M174 |
20 |
射频双极电源晶体管 RF Transistor |
|
| 参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,配置:Single Dual Emitter,直流集电极/Base Gain h... |
|
MS1001 |
Advanced Semiconductor, Inc.
|
M174 |
|
射频双极电源晶体管 RF Transistor |
|
| 参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,配置:Single Dual Emitter,直流集电极/Base Gain h... |
|
MRF587 |
Advanced Semiconductor, Inc.
|
244A-01,STYLE 1 |
|
射频双极电源晶体管 RF Transistor |
|
| 参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,直流集电极/Base Gain hfe Min:50,最大工作频率:500 MH... |
|
MRF5943 |
Advanced Semiconductor, Inc.
|
SO-8 |
299 |
射频双极电源晶体管 RF Transistor |
|
| 参数:制造商:Advanced Semiconductor, Inc.,RoHS:是,配置:Single,直流集电极/Base Gain hfe Min:25,集电极... |
|
MRF6VP11KGSR5 |
Freescale Semiconductor
|
NI-1230S-4 GULL |
|
射频双极电源晶体管 VHV6 130MHZ 1000W NI1230 |
|
| 参数:NXP USA Inc.|卷带(TR)|-|停产|LDMOS|双|130MHz|26dB|50 V|-|-|150 mA|1000W|110 V|底座安装|NI... |