| 图片 |
型号 |
品牌 |
封装 |
数量 |
描述 |
PDF资料 |
|---|
|
AFT21S232SR3 |
Freescale Semiconductor
|
NI-780S |
|
射频双极电源晶体管 HV9 2.1GHZ 230W NI780S-2 |
|
| 参数：NXP USA Inc.|卷带（TR）|-|停产|LDMOS|-|2.11GHz|16.7dB|28 V|-|-|1.5 A|50W|65 V|底座安装|NI-... |
|
|
AFT21S232SR5 |
Freescale Semiconductor
|
NI-780S |
|
射频双极电源晶体管 HV9 2.1GHZ 230W NI780S-2 |
|
| 参数：NXP USA Inc.|卷带（TR）|-|停产|LDMOS|-|2.11GHz|16.7dB|28 V|-|-|1.5 A|50W|65 V|底座安装|NI-... |
|
ASMA101 |
Advanced Semiconductor, Inc.
|
|
|
射频双极电源晶体管 50 Ohm |
|
| 参数：制造商：Advanced Semiconductor, Inc.，RoHS：是，包装形式：Bulk，... |
|
|
ASMA201 |
Advanced Semiconductor, Inc.
|
|
|
射频双极电源晶体管 1-500MHz Gain Block NF=7.5dB Max. 50 Ohm |
|
| 参数：制造商：Advanced Semiconductor, Inc.，RoHS：是，包装形式：Bulk，... |
|
|
ASMA202 |
Advanced Semiconductor, Inc.
|
|
|
射频双极电源晶体管 50 Ohm |
|
| 参数：制造商：Advanced Semiconductor, Inc.，RoHS：是，包装形式：Bulk，... |
|
|
ASMA203 |
Advanced Semiconductor, Inc.
|
|
|
射频双极电源晶体管 50 Ohm |
|
| 参数：制造商：Advanced Semiconductor, Inc.，RoHS：是，包装形式：Bulk，... |
|
|
ASMA301 |
Advanced Semiconductor, Inc.
|
|
|
射频双极电源晶体管 1-1000MHz Gain Block NF=6.5dB Max. 50 Ohm |
|
| 参数：制造商：Advanced Semiconductor, Inc.，RoHS：是，包装形式：Bulk，... |
|
|
ASMA601 |
Advanced Semiconductor, Inc.
|
|
|
射频双极电源晶体管 50 Ohm |
|
| 参数：制造商：Advanced Semiconductor, Inc.，RoHS：是，包装形式：Bulk，... |
|
|
AUNA202 |
Advanced Semiconductor, Inc.
|
|
|
射频双极电源晶体管 50 Ohm |
|
| 参数：制造商：Advanced Semiconductor, Inc.，RoHS：是，包装形式：Bulk，... |
|
|
SP000977848 |
Infineon Technologies
|
|
|
射频双极电源晶体管 RF BIP TRANSISTORS |
|
| 参数：制造商：Infineon，RoHS：是，包装形式：Reel，零件号别名：BFP848FESDH6327 BFP848FESDH6327XT BFP848FESD... |
|
SMA5101-TL-H |
ON Semiconductor
|
6-MCPH |
|
射频双极电源晶体管 Silicon Mono Linear Dble Balanced Mixer |
|
| 参数：onsemi|卷带（TR）,剪切带（CT）,Digi-Reel 得捷定制卷带|-|在售|Ku 波段|-|1|-0.5dB|-|-|-|-|表面贴装型|6-SMD... |
|
|
SD1013-03 |
Advanced Semiconductor, Inc.
|
M113 |
|
射频双极电源晶体管 RF Transistor |
|
| 参数：制造商：Advanced Semiconductor, Inc.，RoHS：是，配置：Single Dual Emitter，直流集电极/Base Gain h... |
|
SD1015-06 |
Advanced Semiconductor, Inc.
|
M135 |
5 |
射频双极电源晶体管 RF Transistor |
|
| 参数：制造商：Advanced Semiconductor, Inc.，RoHS：是，直流集电极/Base Gain hfe Min：35，最大工作频率：150 MH... |
|
|
SD1143-01 |
Advanced Semiconductor, Inc.
|
M113 |
|
射频双极电源晶体管 RF Transistor |
|
| 参数：制造商：Advanced Semiconductor, Inc.，RoHS：是，配置：Single Dual Emitter，直流集电极/Base Gain h... |
|
|
SD1224-02 |
Advanced Semiconductor, Inc.
|
M113 |
|
射频双极电源晶体管 RF Transistor |
|
| 参数：制造商：Advanced Semiconductor, Inc.，RoHS：是，配置：Single Dual Emitter，直流集电极/Base Gain h... |
|
SD1274-01 |
Advanced Semiconductor, Inc.
|
M113 |
|
射频双极电源晶体管 RF Transistor |
|
| 参数：制造商：Advanced Semiconductor, Inc.，RoHS：是，直流集电极/Base Gain hfe Min：20，最大工作频率：175 MH... |
|
|
SD1275-01 |
Advanced Semiconductor, Inc.
|
M113 |
|
射频双极电源晶体管 RF Transistor |
|
| 参数：制造商：Advanced Semiconductor, Inc.，RoHS：是，配置：Single Dual Emitter，直流集电极/Base Gain h... |
|
|
SD1398 |
STMicroelectronics
|
M142 |
|
射频双极电源晶体管 NPN 24V 850-960MHz |
|
| 参数：制造商：STMicroelectronics，产品种类：射频双极电源晶体管，RoHS：是，配置：Single，直流集电极/Base Gain hfe Min：2... |
|
SD1485 |
Advanced Semiconductor, Inc.
|
M175 |
20 |
射频双极电源晶体管 RF Transistor |
|
| 参数：制造商：Advanced Semiconductor, Inc.，RoHS：是，配置：Single，直流集电极/Base Gain hfe Min：20，最大工... |
|
|
SD1487 |
STMicroelectronics
|
M174 |
|
射频双极电源晶体管 NPN 12.5V 30MHz |
|
| 参数：制造商：STMicroelectronics，产品种类：射频双极电源晶体管，RoHS：是，配置：Single，直流集电极/Base Gain hfe Min：1... |
