图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
---|---|---|---|---|---|---|
BST52 /T3 | NXP Semiconductors | SOT-89 | 达林顿晶体管 TRANS DARLINGTON TAPE-13 | |||
参数:制造商:NXP,产品种类:达林顿晶体管,RoHS:是,配置:Single,晶体管极性:NPN,集电极—发射极最大电压 VCEO:80 V,发射极 - 基极电压 ... | ||||||
BST52 T/R | NXP Semiconductors | SOT-89 | 达林顿晶体管 TRANS DARLINGTON TAPE-7 | |||
参数:制造商:NXP,产品种类:达林顿晶体管,RoHS:是,配置:Single,晶体管极性:NPN,集电极—发射极最大电压 VCEO:80 V,发射极 - 基极电压 ... | ||||||
BST52,115 | NXP Semiconductors | SOT-89 | 5,944 | 达林顿晶体管 TRANS DARLINGTON | ||
参数:Nexperia USA Inc.|卷带(TR),剪切带(CT),Digi-Reel 得捷定制卷带|Automotive, AEC-Q101|在售|NPN - ... | ||||||
BST52,135 | NXP Semiconductors | SOT-89 | 3,850 | 达林顿晶体管 TRANS DARLINGTON | ||
参数:Nexperia USA Inc.|卷带(TR),剪切带(CT),Digi-Reel 得捷定制卷带|Automotive, AEC-Q101|在售|NPN - ... | ||||||
BSP 62 E6327 | Infineon Technologies | SOT-223 | 达林顿晶体管 PNP Silicn Darlingtn TRANSISTOR | |||
参数:制造商:Infineon,产品种类:达林顿晶体管,RoHS:是,配置:Single Dual Collector,晶体管极性:PNP,集电极—发射极最大电压 V... | ||||||
BSP 61 E6327 | Infineon Technologies | SOT-223 | 达林顿晶体管 PNP Silicn Darlingtn TRANSISTOR | |||
参数:制造商:Infineon,产品种类:达林顿晶体管,RoHS:是,配置:Single Dual Collector,晶体管极性:PNP,集电极—发射极最大电压 V... | ||||||
BSP 60 E6327 | Infineon Technologies | SOT-223 | 达林顿晶体管 PNP Silicn Darlingtn TRANSISTOR | |||
参数:制造商:Infineon,产品种类:达林顿晶体管,RoHS:是,配置:Single Dual Collector,晶体管极性:PNP,集电极—发射极最大电压 V... | ||||||
BSP 52 E6327 | Infineon Technologies | PG-SOT223-4 | 3 | 达林顿晶体管 NPN Silicn Darlingtn TRANSISTOR | ||
参数:Infineon Technologies|卷带(TR),剪切带(CT),Digi-Reel 得捷定制卷带|-|停产|NPN - 达林顿|1 A|80 V|1.... | ||||||
BSP 51 E6327 | Infineon Technologies | PG-SOT223-4 | 达林顿晶体管 NPN Silicn Darlingtn TRANSISTOR | |||
参数:Infineon Technologies|卷带(TR),剪切带(CT),Digi-Reel 得捷定制卷带|-|停产|NPN - 达林顿|1 A|60 V|1.... | ||||||
BSP52,115 | NXP Semiconductors | SOT-223 | 4425 | 达林顿晶体管 TRANS DARLINGTON | ||
参数:制造商:NXP,产品种类:达林顿晶体管,RoHS:是,配置:Single Dual Collector,晶体管极性:NPN,集电极—发射极最大电压 VCEO:8... | ||||||
BSP52_Q | Fairchild Semiconductor | SOT-223 | 达林顿晶体管 NPN Transistor Darlington | |||
参数:制造商:Fairchild Semiconductor,RoHS:否,配置:Single,晶体管极性:NPN,集电极—发射极最大电压 VCEO:80 V,发射极... | ||||||
BSP52E6327 | Infineon Technologies | SOT-223-4 | 达林顿晶体管 | |||
参数:制造商:Infineon,配置:Single Dual Collector,晶体管极性:NPN,集电极—发射极最大电压 VCEO:80 V,发射极 - 基极电压... | ||||||
BSP52T1 | ON Semiconductor | - | 达林顿晶体管 1A 80V Bipolar | |||
参数:onsemi|剪切带(CT),Digi-Reel 得捷定制卷带|*|停产|-|-|-|-|-|-|-|-|-|-|-|-|... | ||||||
BSP52T1G | ON Semiconductor | SOT-223(TO-261) | 19,464 | 达林顿晶体管 1A 80V Bipolar Power NPN | ||
参数:onsemi|卷带(TR),剪切带(CT),Digi-Reel 得捷定制卷带|-|在售|NPN - 达林顿|1 A|80 V|1.3V @ 500μA,500m... | ||||||
BSP52T3G | ON Semiconductor | SOT-223(TO-261) | 达林顿晶体管 SS DL XSTR NPN 80V | |||
参数:onsemi|卷带(TR),剪切带(CT),Digi-Reel 得捷定制卷带|-|在售|NPN - 达林顿|1 A|80 V|1.3V @ 500μA,500m... | ||||||
BSP50 | Fairchild Semiconductor | SOT-223-4 | 达林顿晶体管 NPN Transistor Darlington | |||
参数:onsemi|卷带(TR),剪切带(CT),Digi-Reel 得捷定制卷带|-|停产|NPN - 达林顿|800 mA|45 V|1.3V @ 500μA,5... | ||||||
BSP50 T/R | NXP Semiconductors | SOT-223 | 达林顿晶体管 TRANS DARLINGTON TAPE-7 | |||
参数:制造商:NXP,产品种类:达林顿晶体管,RoHS:是,配置:Single,晶体管极性:NPN,集电极—发射极最大电压 VCEO:45 V,发射极 - 基极电压 ... | ||||||
BSP50,115 | NXP Semiconductors | SOT-223 | 785 | 达林顿晶体管 TRANS DARLINGTON | ||
参数:Nexperia USA Inc.|卷带(TR),剪切带(CT),Digi-Reel 得捷定制卷带|Automotive, AEC-Q101|在售|NPN - ... | ||||||
BSP50_Q | Fairchild Semiconductor | SOT-223 | 达林顿晶体管 NPN Transistor Darlington | |||
参数:制造商:Fairchild Semiconductor,RoHS:否,配置:Single,晶体管极性:NPN,集电极—发射极最大电压 VCEO:45 V,发射极... | ||||||
BSP50E6327 | Infineon Technologies | SOT-223-4 | 达林顿晶体管 | |||
参数:制造商:Infineon,配置:Single Dual Collector,晶体管极性:NPN,集电极—发射极最大电压 VCEO:45 V,发射极 - 基极电压... |
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