| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
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BLL1214-35,112 | NXP Semiconductors | SOT467C | 射频MOSFET电源晶体管 BULK TNS-MICP | ||
| 参数:Ampleon USA Inc.|托盘|-|停产|LDMOS|-|1.2GHz ~ 1.4GHz|13dB|36 V|-|-|50 mA|35W|75 V|底座... | ||||||
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BLL6G1214L-250,112 | NXP Semiconductors | SOT502A | 射频MOSFET电源晶体管 PWR LDMOS TRANSISTOR | ||
| 参数:Ampleon USA Inc.|托盘|-|停产|LDMOS|-|1.2GHz ~ 1.4GHz|15dB|36 V|-|-|150 mA|250W|89 V|... | ||||||
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BLL6G1214LS-250,11 | NXP Semiconductors | SOT502B | 射频MOSFET电源晶体管 PWR LDMOS TRANSISTOR | ||
| 参数:Ampleon USA Inc.|托盘|-|停产|LDMOS|-|1.2GHz ~ 1.4GHz|15dB|36 V|-|-|150 mA|250W|89 V|... | ||||||
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BLL6H0514-25,112 | NXP Semiconductors | SOT467C | 13 | 射频MOSFET电源晶体管 TRANSISTOR LDMOS DVR | |
| 参数:Ampleon USA Inc.|托盘|-|不适用于新设计|LDMOS|-|1.2GHz ~ 1.4GHz|21dB|50 V|2.5A|-|50 mA|25W... | ||||||
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BLL6H0514L-130,112 | NXP Semiconductors | SOT-1135A | 射频MOSFET电源晶体管 Single 100V 18A 200mOhms | ||
| 参数:制造商:NXP,RoHS:是,配置:Single,晶体管极性:N-Channel,频率:0.5 GHz to 1.4 GHz,增益:19 dB at 1.215... | ||||||
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BLL6H0514LS-130,11 | NXP Semiconductors | CDFM2 | 射频MOSFET电源晶体管 Single 100V 18A 200mOhms | ||
| 参数:Ampleon USA Inc.|托盘|-|不适用于新设计|LDMOS|-|1.2GHz ~ 1.4GHz|17dB|50 V|18A|-|50 mA|130W... | ||||||
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BLL6H1214-500 | NXP Semiconductors | SOT502B | 射频MOSFET电源晶体管 500W, 1.2-1.4GHz L-Band, Radar Appl. | ||
| 参数:制造商:NXP,产品种类:射频MOSFET电源晶体管,RoHS:是,配置:Dual Common Source,晶体管极性:N-Channel,汲极/源极击穿电... | ||||||
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BLL6H1214-500,112 | NXP Semiconductors | SOT539A | 206 | 射频MOSFET电源晶体管 TRANS L-BAND RADAR LDMOS | |
| 参数:Ampleon USA Inc.|托盘|-|不适用于新设计|LDMOS|双,共源|1.2GHz ~ 1.4GHz|17dB|50 V|-|-|150 mA|50... | ||||||
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BLL6H1214L-250,112 | NXP Semiconductors | SOT502A | 射频MOSFET电源晶体管 Single 100V 42A 100mOhms | ||
| 参数:Ampleon USA Inc.|托盘|-|停产|LDMOS|-|1.2GHz ~ 1.4GHz|17dB|50 V|42A|-|100 mA|250W|100... | ||||||
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BLL6H1214LS-250,11 | NXP Semiconductors | SOT502B | 射频MOSFET电源晶体管 Single 100V 42A 100mOhms | ||
| 参数:Ampleon USA Inc.|托盘|-|停产|LDMOS|-|1.2GHz ~ 1.4GHz|17dB|50 V|42A|-|100 mA|250W|100... | ||||||
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BLL6H1214LS-500,11 | NXP Semiconductors | SOT502B | 射频MOSFET电源晶体管 PWR LDMOS TRANSISTOR | ||
| 参数:Ampleon USA Inc.|托盘|-|在售|LDMOS|双,共源|1.2GHz ~ 1.4GHz|17dB|50 V|-|-|150 mA|500W|10... | ||||||
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BLM6G10-30,118 | NXP Semiconductors | 16-HSOPF | 射频MOSFET电源晶体管 W-CDMA 920MHZ-960MHZ POWER MMIC | ||
| 参数:制造商:NXP,RoHS:是,配置:Dual,晶体管极性:N-Channel,频率:860 MHz to 960 MHz,增益:29 dB at 940 MHz... | ||||||
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BLM6G10-30,135 | NXP Semiconductors | 16-HSOPF | 射频MOSFET电源晶体管 W-CDMA 900-1000MHz POWER MMIC | ||
| 参数:制造商:NXP,RoHS:是,配置:Dual,晶体管极性:N-Channel,频率:860 MHz to 960 MHz,增益:29 dB at 940 MHz... | ||||||
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BLM6G10-30G,118 | NXP Semiconductors | 16-HSOP | 射频MOSFET电源晶体管 W-CDMA 920MHZ-960MHZ POWER MMIC | ||
| 参数:制造商:NXP,RoHS:是,配置:Dual,晶体管极性:N-Channel,频率:860 MHz to 960 MHz,增益:29 dB at 940 MHz... | ||||||
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BLC6G22LS-75,112 | NXP Semiconductors | SOT896B,DFM2 | 射频MOSFET电源晶体管 Single 65V 18A 0.15Ohms | ||
| 参数:NXP USA Inc.|管件|-|停产|LDMOS|-|2.11GHz ~ 2.17GHz|18.5dB|28 V|18A|-|690 mA|17W|65 V... | ||||||
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BLC6G27-100,112 | NXP Semiconductors | SOT-895A | 射频MOSFET电源晶体管 28V | ||
| 参数:Ampleon USA Inc.|管件|-|停产|-|-|-|-|-|-|-|-|14W|28 V|底座安装|SOT-895A|SOT-895A... | ||||||
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BLC6G27-100,118 | NXP Semiconductors | SOT-895A | 射频MOSFET电源晶体管 28V | ||
| 参数:Ampleon USA Inc.|卷带(TR)|-|停产|-|-|-|-|-|-|-|-|14W|28 V|底座安装|SOT-895A|SOT-895A... | ||||||
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BLC6G27LS-100,112 | NXP Semiconductors | SOT-895B | 射频MOSFET电源晶体管 Single | ||
| 参数:制造商:NXP,RoHS:是,配置:Single,晶体管极性:N-Channel,频率:2.5 GHz to 2.7 GHz,增益:17 dB at 2.5 G... | ||||||
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BLC6G27LS-100,118 | NXP Semiconductors | SOT-895B | 射频MOSFET电源晶体管 Single | ||
| 参数:制造商:NXP,RoHS:是,配置:Single,晶体管极性:N-Channel,频率:2.5 GHz to 2.7 GHz,增益:17 dB at 2.5 G... | ||||||
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BLU6H0410L-600P,11 | NXP Semiconductors | SOT539A | 射频MOSFET电源晶体管 PWR LDMOS TRANSISTOR | ||
| 参数:Ampleon USA Inc.|托盘|-|在售|LDMOS|双,共源|860MHz|21dB|50 V|-|-|1.3 A|250W|110 V|底座安装|S... | ||||||
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