| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
AGR21N090EF | TriQuint Semiconductor | 射频MOSFET电源晶体管 RF Transistor | |||
| 参数：制造商：TriQuint，产品种类：射频MOSFET电源晶体管，RoHS：是，... | ||||||
|
AGR26045EF | TriQuint Semiconductor | 26045EF | 射频MOSFET电源晶体管 RF Transistor | ||
| 参数：制造商：TriQuint，产品种类：射频MOSFET电源晶体管，RoHS：是，配置：Single，晶体管极性：N-Channel，频率：2.535 GHz to... | ||||||
|
AGR26125EF | TriQuint Semiconductor | 26125EF | 射频MOSFET电源晶体管 RF Transistor | ||
| 参数：制造商：TriQuint，产品种类：射频MOSFET电源晶体管，RoHS：是，配置：Single，晶体管极性：N-Channel，频率：2.5 GHz to 2... | ||||||
|
AGR26180EF | TriQuint Semiconductor | 26180EF | 射频MOSFET电源晶体管 RF Transistor | ||
| 参数：制造商：TriQuint，产品种类：射频MOSFET电源晶体管，RoHS：是，配置：Dual，晶体管极性：N-Channel，频率：2.535 GHz to 2... | ||||||
|
AFT05MP075GNR1 | Freescale Semiconductor | TO-270 WB-4 鸥翼形 | 射频MOSFET电源晶体管 MV9 75W 12.5V TO270WB4G | ||
| 参数：NXP USA Inc.|卷带（TR）|-|在售|LDMOS|双|520MHz|18.5dB|12.5 V|-|-|400 mA|70W|40 V|表面贴装型|... | ||||||
|
AFT05MP075NR1 | Freescale Semiconductor | TO-270 WB-4 | 9 | 射频MOSFET电源晶体管 MV9 75W 12.5V TO270WB4 | |
| 参数：NXP USA Inc.|卷带（TR）,剪切带（CT）,Digi-Reel 得捷定制卷带|-|在售|LDMOS|双|520MHz|18.5dB|12.5 V|-... | ||||||
|
AFT05MS031GNR1 | Freescale Semiconductor | TO-270-2 鸥翼型 | 射频MOSFET电源晶体管 MV9 UHF 13.6V | ||
| 参数：NXP USA Inc.|卷带（TR）|-|在售|LDMOS|-|520MHz|17.7dB|13.6 V|-|-|10 mA|31W|40 V|表面贴装型|T... | ||||||
|
AFT05MS031NR1 | Freescale Semiconductor | TO-270-2 | 92 | 射频MOSFET电源晶体管 MV9 UHF 13.6V | |
| 参数：NXP USA Inc.|卷带（TR）,剪切带（CT）,Digi-Reel 得捷定制卷带|-|在售|LDMOS|-|520MHz|17.7dB|13.6 V|-... | ||||||
|
|
AFT09MS031GNR1 | Freescale Semiconductor | TO-270-2 鸥翼型 | 3,050 | 射频MOSFET电源晶体管 MV9 800MHZ13.6V | |
| 参数：NXP USA Inc.|卷带（TR）,剪切带（CT）,Digi-Reel 得捷定制卷带|-|在售|LDMOS|-|870MHz|17.2dB|13.6 V|-... | ||||||
|
|
AFT09MS031NR1 | Freescale Semiconductor | TO-270-2 | 63 | 射频MOSFET电源晶体管 MV9 800MHZ 13.6V | |
| 参数：NXP USA Inc.|卷带（TR）,剪切带（CT）,Digi-Reel 得捷定制卷带|-|在售|LDMOS|-|870MHz|17.2dB|13.6 V|-... | ||||||
|
AFT18HW355SR5 | Freescale Semiconductor | NI-1230S | 射频MOSFET电源晶体管 HV9 1.8GHz 350W NI230S-4 | ||
| 参数：NXP USA Inc.|卷带（TR）|-|停产|LDMOS|双|1.88GHz|15.2dB|28 V|-|-|1.1 A|63W|65 V|底座安装|NI-... | ||||||
|
|
AFT18HW355SR6 | Freescale Semiconductor | NI-1230S | 射频MOSFET电源晶体管 HV9 1.8GHz 350W NI230S-4 | ||
| 参数：NXP USA Inc.|卷带（TR）|-|停产|LDMOS|双|1.88GHz|15.2dB|28 V|-|-|1.1 A|63W|65 V|底座安装|NI-... | ||||||
|
AFT18S230SR3 | Freescale Semiconductor | NI-780S | 射频MOSFET电源晶体管 AF 1.8GHZ 230W NI780S-6 | ||
| 参数：NXP USA Inc.|卷带（TR）|-|停产|LDMOS|-|1.88GHz|19dB|28 V|-|-|1.8 A|50W|65 V|底座安装|NI-78... | ||||||
|
AFT18S230SR5 | Freescale Semiconductor | NI-780S-6 | 10 | 射频MOSFET电源晶体管 AF 1.8GHZ 230W NI780S-6 | |
| 参数：NXP USA Inc.|卷带（TR）,剪切带（CT）,Digi-Reel 得捷定制卷带|-|停产|LDMOS|-|1.88GHz|19dB|28 V|-|-|... | ||||||
|
AFT20P060-4NR3 | Freescale Semiconductor | OM-780-4L | 射频MOSFET电源晶体管 AF1 2GHz 60W OM780-4 | ||
| 参数：NXP USA Inc.|卷带（TR）|-|停产|LDMOS|双|2.17GHz|18.9dB|28 V|-|-|450 mA|6.3W|65 V|表面贴装型|... | ||||||
|
|
AFT21S230SR5 | Freescale Semiconductor | NI-780S-6 | 射频MOSFET电源晶体管 HV9 2.1GHZ 230W NI780S-6 | ||
| 参数：NXP USA Inc.|卷带（TR）|-|停产|LDMOS|-|2.11GHz|16.7dB|28 V|-|-|1.5 A|50W|65 V|-|NI-780... | ||||||
|
|
BLW96 | Advanced Semiconductor, Inc. | 射频MOSFET电源晶体管 RF Transistor | |||
| 参数：制造商：Advanced Semiconductor, Inc.，RoHS：是，包装形式：Tray，... | ||||||
|
BLL1214-250,112 | NXP Semiconductors | SOT502A | 射频MOSFET电源晶体管 RF LDMOS L-BAND | ||
| 参数：Ampleon USA Inc.|托盘|-|停产|LDMOS|-|1.2GHz ~ 1.4GHz|12dB|36 V|-|-|150 mA|250W|75 V|... | ||||||
|
|
BLL1214-250R,112 | NXP Semiconductors | SOT502A | 射频MOSFET电源晶体管 TRANS L-BAND RADAR LDMOS | ||
| 参数：Ampleon USA Inc.|托盘|-|停产|LDMOS|-|1.2GHz ~ 1.4GHz|13dB|36 V|-|-|150 mA|250W|75 V|... | ||||||
|
BLL1214-35 | NXP Semiconductors | SOT-467C | 射频MOSFET电源晶体管 BULK TNS-MICP | ||
| 参数：制造商：NXP，产品种类：射频MOSFET电源晶体管，RoHS：是，配置：Single，晶体管极性：N-Channel，频率：1.2 GHz to 1.4 GH... | ||||||
55/82 首页 上页 [50] [51] [52] [53] [54] [55] [56] [57] [58] [59] [60] 下页 尾页
