| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
NDF05N50ZH | ON Semiconductor | TO-220-3 整包 | MOSFET NFET 500V 5A 1.2 | ||
| 参数：制造商：ON Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：500 V，闸/源击穿电压：30 V，漏极连续电流：... | ||||||
|
NDF06N60ZG | ON Semiconductor | TO-220-3 整包 | MOSFET NFET TO220FP 600V 6A .98R | ||
| 参数：制造商：ON Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，漏极连续电流：6 A，电阻汲极/源极 R... | ||||||
|
|
NDF06N60ZH | ON Semiconductor | TO-220-3 整包 | MOSFET NFET 600V 6A 980 | ||
| 参数：制造商：ON Semiconductor，... | ||||||
|
|
NDF06N62ZG | ON Semiconductor | TO-220-3 整包 | MOSFET Single N-Ch 620V 3.8A | ||
| 参数：制造商：ON Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：620 V，漏极连续电流：3.8 A，电阻汲极/源极... | ||||||
|
NDF08N50ZG | ON Semiconductor | TO-220FP | MOSFET NFET T0220FP 600V 7.5A 85 | ||
| 参数：制造商：ON Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：500 V，闸/源击穿电压：30 V，漏极连续电流：... | ||||||
|
|
NDF08N50ZH | ON Semiconductor | TO-220-3 整包 | MOSFET NFET 500V 7.5A | ||
| 参数：制造商：ON Semiconductor，... | ||||||
|
|
NDF08N60ZG | ON Semiconductor | TO-220-3 整包 | MOSFET 600V 0.95 OHM TO- 220FP | ||
| 参数：制造商：ON Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸/源击穿电压：30 V，漏极连续电流：... | ||||||
|
|
NDF08N60ZH | ON Semiconductor | TO-220-3 整包 | MOSFET NFET 600V 7.5A | ||
| 参数：制造商：ON Semiconductor，... | ||||||
|
|
NDF10N60ZG | ON Semiconductor | TO-220-3 整包 | MOSFET NFET T0220FP 600V 10A .65 | ||
| 参数：制造商：ON Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，漏极连续电流：1... | ||||||
|
|
NDF10N60ZH | ON Semiconductor | TO-220-3 整包 | MOSFET NFET 600V 10A | ||
| 参数：制造商：ON Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸/源击穿电压：30 V，漏极连续电流：... | ||||||
|
|
NDF10N62ZG | ON Semiconductor | TO-220-3 整包 | MOSFET Single N-Ch 620V 5.7A, 10A | ||
| 参数：制造商：ON Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：620 V，漏极连续电流：10 A，电阻汲极/源极 ... | ||||||
|
|
NDF11N50ZG | ON Semiconductor | TO-220FP | MOSFET 500V 0.52 OHM TO- 220FP | ||
| 参数：制造商：ON Semiconductor，晶体管极性：N-Channel，汲极/源极击穿电压：500 V，闸/源击穿电压：+/- 30 V，漏极连续电流：12 ... | ||||||
|
|
NDF11N50ZH | ON Semiconductor | TO-220-3 整包 | MOSFET NFET 500V 10.5A | ||
| 参数：制造商：ON Semiconductor，... | ||||||
|
NDH8301N | Fairchild Semiconductor | SuperSOT-8 | MOSFET DISC BY MFG 2/02 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/源击穿电压：8 V，漏极... | ||||||
|
NDH8302P | Fairchild Semiconductor | MOSFET DISC BY MFG 2/02 | |||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，包装形式：Reel，工厂包装数量：3000，... | ||||||
|
|
NDH8303N | Fairchild Semiconductor | SuperSOT-8 | MOSFET DISC BY MFG 2/02 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/源击穿电压：+/- 8 ... | ||||||
|
NDH8304P | Fairchild Semiconductor | SuperSOT?-8 | MOSFET Dual P-Ch FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，... | ||||||
|
|
NDH8304P_Q | Fairchild Semiconductor | SSOT-8 | MOSFET Dual P-Ch FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，闸/源击穿电压：+/- ... | ||||||
|
|
NDH831N | Fairchild Semiconductor | SuperSOT-8 | MOSFET DISC BY MFG 2/02 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/源击穿电压：8 V，漏极... | ||||||
|
|
NDH8321C | Fairchild Semiconductor | SSOT-8 | MOSFET Dual N/P Channel FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：+... | ||||||
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