| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
NDB708A | Fairchild Semiconductor | TO-263AB | MOSFET DISC BY MFG 2/02 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：80 V，闸/源击穿电压：+/- 20... | ||||||
|
|
NDB710A | Fairchild Semiconductor | TO-263AB | MOSFET DISC BY MFG 2/02 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电压：+/- 2... | ||||||
|
NDC631N | Fairchild Semiconductor | SOT-23-6 细型，TSOT-23-6 | MOSFET N-Ch LL FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/... | ||||||
|
|
NDC631N_D87Z | Fairchild Semiconductor | SSOT-6 | MOSFET N-Ch LL FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/... | ||||||
|
NDC631N_F095 | Fairchild Semiconductor | SuperSOT-6 | MOSFET 20V 4.1A N-CH ENHANCEMENT MODE | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/... | ||||||
|
NDC632P | Fairchild Semiconductor | SuperSOT?-6 | MOSFET P-Channel FET LL Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，... | ||||||
|
|
NDC632P_F095 | Fairchild Semiconductor | SuperSOT-6 | MOSFET -20V -2.7A P-CH ENHANCEMENT MODE | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：20 V，闸/... | ||||||
|
|
NDC651N | Fairchild Semiconductor | SuperSOT?-6 | MOSFET N-Ch LL FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
NDC651N_F095 | Fairchild Semiconductor | SuperSOT-6 | MOSFET 30V 3.2A N-CH ENHANCEMENT MODE | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
NDC651N_Q | Fairchild Semiconductor | SSOT-6 | MOSFET N-Ch LL FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
NDC652P | Fairchild Semiconductor | SuperSOT?-6 | MOSFET SO-6 P-CH LOGIC | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，... | ||||||
|
|
NDC652P_F095 | Fairchild Semiconductor | SuperSOT-6 | MOSFET -30V 2.4A P-CH ENHANCEMENT MODE | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
NDC652P_Q | Fairchild Semiconductor | SSOT-6 | MOSFET SO-6 P-CH LOGIC | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，闸/源击穿电压：- 20... | ||||||
|
|
NDC7001C | Fairchild Semiconductor | SuperSOT?-6 | MOSFET Dual N/P Channel FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：+... | ||||||
|
|
NDC7001C_Q | Fairchild Semiconductor | SSOT-6 | MOSFET Dual N/P Channel FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N and P-Channel，汲极/源极击穿电压：+/- 60 V，闸/源击... | ||||||
|
|
NDC7002N_Q | Fairchild Semiconductor | SSOT-6 | MOSFET SO-6 N-CH ENHANCE | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：50 V，闸/源击穿电压：20 V，漏... | ||||||
|
|
NDC7002N_SB9G007 | Fairchild Semiconductor | SuperSOT?-6 | MOSFET 50V DUAL N-CHANNEL | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，包装形式：Reel，工厂包装数量：3000，... | ||||||
|
|
NDC7003P | Fairchild Semiconductor | SuperSOT?-6 | MOSFET Dual P-Ch FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 60 V，... | ||||||
|
NDD02N60Z-1G | ON Semiconductor | I-PAK | MOSFET NFET IPAK 600V 2.2A 4.8R | ||
| 参数：制造商：ON Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸/源击穿电压：30 V，漏极连续电流：... | ||||||
|
NDD02N60ZT4G | ON Semiconductor | DPAK | MOSFET NFET IPAK 600V 2.2A 4.8R | ||
| 参数：制造商：ON Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸/源击穿电压：... | ||||||
54/1324 首页 上页 [49] [50] [51] [52] [53] [54] [55] [56] [57] [58] [59] 下页 尾页
