| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
MTP2955V_L86Z | Fairchild Semiconductor | TO-220AB | MOSFET DISC BY MFG 2/02 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 60 V，闸/源击穿电压：+/- ... | ||||||
|
MTP2P50E | ON Semiconductor | TO-220 | MOSFET 500V 2A P-Channel | ||
| 参数：制造商：ON Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 500 V，闸/源击穿电... | ||||||
|
|
MTP2P50EG | ON Semiconductor | TO-220 | MOSFET 500V 2A P-Channel | ||
| 参数：制造商：ON Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 500 V，闸/源击穿电... | ||||||
|
|
MTP3055V | Fairchild Semiconductor | TO-220-3 | MOSFET N-Channel FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... | ||||||
|
MTP3055V_L86Z | Fairchild Semiconductor | TO-220AB | MOSFET TO-220 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 20... | ||||||
|
|
MTP3055VL | Fairchild Semiconductor | TO-220-3 | 2,757 | MOSFET 60V Single N-Ch | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... | ||||||
|
|
MTP3055VL_Q | Fairchild Semiconductor | TO-220AB | MOSFET 60V Single N-Ch | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 15... | ||||||
|
MTD20N06VT4 | ON Semiconductor | DPAK | MOSFET 60V 20A N-Channel | ||
| 参数：制造商：ON Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+... | ||||||
|
|
MTD2955V | Fairchild Semiconductor | TO-252 | MOSFET DISC BY MFG 2/02 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 60 V，闸/源击穿电压：+/- ... | ||||||
|
MTD3055V | Fairchild Semiconductor | TO-252AA | MOSFET N-Channel FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... | ||||||
|
|
MTD3055VL | Fairchild Semiconductor | TO-252AA | MOSFET N-Ch LL FET Enhancement Mode | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... | ||||||
|
MTD5P06VT4 | ON Semiconductor | DPAK | MOSFET 60V 5A P-Channel | ||
| 参数：制造商：ON Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 60 V，闸/源击穿电压... | ||||||
|
|
MTD5P06VT4G | ON Semiconductor | DPAK | MOSFET PFET DPAK 60V 5A 450mOhm | ||
| 参数：制造商：ON Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 60 V，闸/源击穿电压... | ||||||
|
MTD5P06VT4GV | ON Semiconductor | TO-252-3，DPak（2 引线 + 接片），SC-63 | MOSFET Single P-Ch 60V 5A | ||
| 参数：制造商：ON Semiconductor，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：60 V，漏极连续电流：5 A，电阻汲极/源极 RD... | ||||||
|
|
MTD6N15T4 | ON Semiconductor | DPAK | MOSFET 150V 6A N-Channel | ||
| 参数：制造商：ON Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：150 V，闸/源击穿电压：... | ||||||
|
|
MTD6N15T4G | ON Semiconductor | DPAK | MOSFET NFET DPAK 150V 6A 300mOhm | ||
| 参数：制造商：ON Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：150 V，闸/源击穿电压：... | ||||||
|
|
MTD6N15T4GV | ON Semiconductor | TO-252-3，DPak（2 引线 + 接片），SC-63 | MOSFET Single N-Ch 150V 6A | ||
| 参数：制造商：ON Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：150 V，漏极连续电流：6 A，电阻汲极/源极 R... | ||||||
|
|
MTD6N20ET4 | ON Semiconductor | DPAK | MOSFET 200V 6A N-Channel | ||
| 参数：制造商：ON Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：200 V，闸/源击穿电压：... | ||||||
|
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MTD6N20ET4G | ON Semiconductor | DPAK | MOSFET NFET DPAK 200V 6A 700mOhm | ||
| 参数：制造商：ON Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：200 V，闸/源击穿电压：... | ||||||
|
MTD6N20ET5G | ON Semiconductor | DPAK | MOSFET NFET DPAK 200V 6A 700MO | ||
| 参数：制造商：ON Semiconductor，RoHS：是，包装形式：Reel，... | ||||||
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