| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
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IPA60R360CFD7XKSA1 | Infineon Technologies | TO-220-3 整包 | MOSFET N-CH 650V 5A TO220 | ||
| 参数:Infineon Technologies|管件|CoolMOS? CFD7|在售|N 通道|MOSFET(金属氧化物)|650 V|5A(Tc)|10V|36... | ||||||
|
NVMFWS2D3P04M8LT1G | onsemi | 8-PowerTDFN,5 引线 | MV8 P INITIAL PROGRAM | ||
| 参数:onsemi|卷带(TR)|Automotive, AEC-Q101|在售|P 通道|MOSFET(金属氧化物)|40 V|31A(Ta),222A(Tc)|4... | ||||||
|
FCD3400N80Z | onsemi | TO-252-3,DPak(2 引线 + 接片),SC-63 | 2,480 | MOSFET N-CH 800V 2A DPAK | |
| 参数:onsemi|卷带(TR),剪切带(CT),Digi-Reel? 得捷定制卷带|SuperFET? II|不适用于新设计|N 通道|MOSFET(金属氧化物)|... | ||||||
|
RD3S075CNTL1 | Rohm Semiconductor | TO-252-3,DPak(2 引线 + 接片),SC-63 | 2,463 | MOSFET N-CH 190V 7.5A TO252 | |
| 参数:Rohm Semiconductor|卷带(TR),剪切带(CT),Digi-Reel? 得捷定制卷带|-|在售|N 通道|MOSFET(金属氧化物)|190 ... | ||||||
|
NP90N055VUK-E1-AY | Renesas Electronics America Inc | TO-252-3,DPak(2 引线 + 接片),SC-63 | 2,457 | MOSFET N-CH 55V 90A TO252-3 | |
| 参数:Renesas Electronics America Inc|卷带(TR),剪切带(CT),Digi-Reel? 得捷定制卷带|-|在售|N 通道|MOSFE... | ||||||
|
STFI6N62K3 | STMicroelectronics | TO-262-3 整包,I2Pak | 1,500 | MOSFET N CH 620V 5.5A I2PAKFP | |
| 参数:STMicroelectronics|管件|SuperMESH3?|停产|N 通道|MOSFET(金属氧化物)|620 V|5.5A(Tc)|10V|1.2 欧... | ||||||
|
STFI7LN80K5 | STMicroelectronics | TO-262-3 整包,I2Pak | 1,499 | MOSFET N-CH 800V 5A I2PAKFP | |
| 参数:STMicroelectronics|管件|MDmesh?|停产|N 通道|MOSFET(金属氧化物)|800 V|5A(Tc)|10V|1.15 欧姆 @ 2... | ||||||
|
R6004KNX | Rohm Semiconductor | TO-220-3 整包 | 331 | MOSFET N-CH 600V 4A TO220FM | |
| 参数:Rohm Semiconductor|散装|-|在售|N 通道|MOSFET(金属氧化物)|600 V|4A(Tc)|10V|980 毫欧 @ 1.5A,10V... | ||||||
|
IPP16CN10NGXKSA1 | Infineon Technologies | TO-220-3 | 124 | MOSFET N-CH 100V 53A TO220-3 | |
| 参数:Infineon Technologies|管件|OptiMOS?|不适用于新设计|N 通道|MOSFET(金属氧化物)|100 V|53A(Tc)|10V|1... | ||||||
|
BSZ0501NSIATMA1 | Infineon Technologies | PG-TSDSON-8-FL | MOSFET N-CH 30V 25A/40A TSDSON | ||
| 参数:Infineon Technologies|卷带(TR),剪切带(CT),Digi-Reel? 得捷定制卷带|OptiMOS?|在售|N 通道|MOSFET(金... | ||||||
|
SQD50N10-8M9L_GE3 | Vishay Siliconix | TO-252-3,DPak(2 引线 + 接片),SC-63 | MOSFET N-CH 100V 50A TO252AA | ||
| 参数:Vishay Siliconix|卷带(TR),剪切带(CT),Digi-Reel? 得捷定制卷带|Automotive, AEC-Q101, TrenchFE... | ||||||
|
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CSD19533KCS | Texas Instruments | TO-220-3 | MOSFET N-CH 100V 100A TO220-3 | ||
| 参数:Texas Instruments|管件|NexFET?|在售|N 通道|MOSFET(金属氧化物)|100 V|100A(Ta)|6V,10V|10.5 毫欧... | ||||||
|
NVMYS5D3N04CTWG | onsemi | LFPAK4(5x6) | MOSFET N-CH 40V 19A/71A 4LFPAK | ||
| 参数:onsemi|卷带(TR),剪切带(CT),Digi-Reel? 得捷定制卷带|Automotive, AEC-Q101|在售|N 通道|MOSFET(金属氧化... | ||||||
|
R6007JND3TL1 | Rohm Semiconductor | TO-252 | MOSFET N-CH 600V 7A TO252 | ||
| 参数:Rohm Semiconductor|卷带(TR),剪切带(CT),Digi-Reel? 得捷定制卷带|-|在售|N 通道|MOSFET(金属氧化物)|600 ... | ||||||
|
IPA60R600P7XKSA1 | Infineon Technologies | TO-220-3 整包 | 1 | MOSFET N-CH 600V 6A TO220 | |
| 参数:Infineon Technologies|管件|CoolMOS? P7|在售|N 通道|MOSFET(金属氧化物)|600 V|6A(Tc)|10V|600 ... | ||||||
|
SIHD4N80E-GE3 | Vishay Siliconix | TO-252-3,DPak(2 引线 + 接片),SC-63 | MOSFET N-CH 800V 4.3A DPAK | ||
| 参数:Vishay Siliconix|散装|E|在售|N 通道|MOSFET(金属氧化物)|800 V|4.3A(Tc)|10V|1.27 欧姆 @ 2A,10V|... | ||||||
|
|
STP10N80K5 | STMicroelectronics | TO-220-3 | MOSFET N-CH 800V 9A TO220 | ||
| 参数:STMicroelectronics|管件|MDmesh? K5|在售|N 通道|MOSFET(金属氧化物)|800 V|9A(Tc)|10V|600 毫欧 @... | ||||||
|
IRFSL7534PBF | Infineon Technologies | TO-262-3,长引线,I2Pak,TO-262AA | MOSFET N-CH 60V 195A TO262 | ||
| 参数:Infineon Technologies|管件|HEXFET?, StrongIRFET?|最后售卖|N 通道|MOSFET(金属氧化物)|60 V|195A... | ||||||
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R5011ANJTL | Rohm Semiconductor | TO-263-3,D2Pak(2 引线 + 接片),TO-263AB | MOSFET N-CH 500V 11A LPTS | ||
| 参数:Rohm Semiconductor|卷带(TR)|-|不适用于新设计|N 通道|MOSFET(金属氧化物)|500 V|11A(Ta)|10V|500 毫欧 ... | ||||||
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DMNH4005SCTQ | Diodes Incorporated | TO-220-3 | MOSFET N-CH 40V 150A TO220AB | ||
| 参数:Diodes Incorporated|管件|-|在售|N 通道|MOSFET(金属氧化物)|40 V|150A(Tc)|10V|4 毫欧 @ 20A,10V|... | ||||||
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