图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
---|---|---|---|---|---|---|
IXTP15N50L2 | Ixys | TO-220-3 | 1,094 | MOSFET LINEAR L2 SERIES MOSFET 500V 15A | ||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,... | ||||||
IXTP160N04T2 | Ixys | TO-220-3 | MOSFET 160 Amps 40V | |||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,工厂包装数量:50,... | ||||||
IXTP160N075T | Ixys | TO-220-3 | MOSFET MOSFET Id160 BVdass75 | |||
参数:制造商:IXYS,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:75 V,漏极连续电流:160 A,电阻汲极/源极 ... | ||||||
IXTP160N085T | Ixys | TO-220-3 | MOSFET 160 Amps 85V 0.006 Ohm Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:85 V,闸/源击穿电压:+/- 20 V,漏极连续电流:160 A,电阻汲... | ||||||
IXTP160N10T | Ixys | TO-220-3 | 68 | MOSFET 160 Amps 100V 6.9 Rds | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,漏极连续电流:160 A,电阻汲极/源极 RDS(导通):0.0... | ||||||
IXTP16N50P | Ixys | TO-220-3 | 105 | MOSFET 16.0 Amps 500 V 0.4 Ohm Rds | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏极连续电流:16 A,电阻汲... | ||||||
IXTP170N075T2 | Ixys | TO-220-3 | 100 | MOSFET 170 Amps 75V | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:75 V,闸/源击穿电压:+/- 20 V,漏极连续电流:170 A,电阻汲... | ||||||
IXTP180N055T | Ixys | TO-220-3 | MOSFET 180 Amps 55V 0.004 Ohm Rds | |||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,工厂包装数量:50,... | ||||||
IXTP180N085T | Ixys | TO-220-3 | MOSFET 180 Amps 85V 5.5 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:85 V,漏极连续电流:180 A,电阻汲极/源极 RDS(导通):0.00... | ||||||
IXTP180N10T | Ixys | TO-220-3 | MOSFET MOSFET Id180 BVdass100 | |||
参数:制造商:IXYS,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,漏极连续电流:180 A,电阻汲极/源极... | ||||||
IXTP182N055T | Ixys | TO-220-3 | MOSFET MOSFET Id182 BVdass55 | |||
参数:制造商:IXYS,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,漏极连续电流:182 A,电阻汲极/源极 ... | ||||||
IXTP18N60PM | Ixys | TO-220 隔离的标片 | MOSFET Polar MOS | |||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,工厂包装数量:50,... | ||||||
IXTP18P10T | Ixys | TO-220-3 | 6,147 | MOSFET 18 Amps 100V 0.12 Rds | ||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,工厂包装数量:50,... | ||||||
IXTP1N100 | Ixys | TO-220-3 | MOSFET 1.5 Amps 1000V 11 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:1000 V,闸/源击穿电压:+/- 30 V,漏极连续电流:1.5 A,电... | ||||||
IXTP1N100P | Ixys | TO-220-3 | 582 | MOSFET 1 Amps 1000V 14 Rds | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:1000 V,闸/源击穿电压:+/- 20 V,漏极连续电流:1.2 A,电... | ||||||
IXTP1N120P | Ixys | TO-220-3 | MOSFET 1 Amps 1200V 20 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:1200 V,闸/源击穿电压:+/- 20 V,漏极连续电流:1 A,电阻汲... | ||||||
IXTP1N80 | Ixys | TO-220-3 | MOSFET 1 Amps 800V 11 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:800 V,闸/源击穿电压:+/- 20 V,漏极连续电流:1 A,电阻汲极... | ||||||
IXTP1N80P | Ixys | TO-220-3 | MOSFET Polar Power Mosfet 800V 1A | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:800 V,闸/源击穿电压:20 V,漏极连续电流:1 A,电阻汲极/源极 ... | ||||||
IXTP1R4N100P | Ixys | TO-220-3 | MOSFET 1.4 Amps 1000V 11 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:1000 V,闸/源击穿电压:+/- 20 V,漏极连续电流:1.4 A,电... | ||||||
IXTP1R4N120P | Ixys | TO-220-3 | MOSFET 1.4 Amps 1200V 15 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:1200 V,闸/源击穿电压:+/- 20 V,漏极连续电流:1.4 A,电... |
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