图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
---|---|---|---|---|---|---|
IXTN32P60P | Ixys | SOT-227-4,miniBLOC | 10 | MOSFET -32 Amps -600V 0.350 Rds | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:600 V,漏极连续电流:32 A,电阻汲极/源极 RDS(导通):350 ... | ||||||
IXTN36N50 | Ixys | SOT-227-4,miniBLOC | MOSFET 36 Amps 500V | |||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,... | ||||||
IXTN40P50P | Ixys | SOT-227-4,miniBLOC | 39 | MOSFET -40.0 Amps -500V 0.230 Rds | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 500 V,闸/源击穿电压:+/- 20 V,漏极连续电流:- 40 A... | ||||||
IXTN44N50L | Ixys | MOSFET 44 Amps 500V | ||||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,... | ||||||
IXTN46N50L | Ixys | SOT-227-4,miniBLOC | MOSFET 44 Amps 500V | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏极连续电流:46 A,电阻汲... | ||||||
IXTN60N50L2 | Ixys | SOT-227-4,miniBLOC | 155 | MOSFET 60 Amps 500V | ||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,... | ||||||
IXTN62N50L | Ixys | SOT-227-4,miniBLOC | MOSFET 62 Amps 500V | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏极连续电流:62 A,电阻汲... | ||||||
IXTN79N20 | Ixys | SOT-227-4,miniBLOC | MOSFET 79 Amps 200V | |||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,... | ||||||
IXTN8N150L | Ixys | SOT-227-4,miniBLOC | MOSFET 8 Amps 1500V | |||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,工厂包装数量:10,... | ||||||
IXTN90N25L2 | Ixys | SOT-227B | MOSFET 90 Amps 250V | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:250 V,闸/源击穿电压:+/- 20 V,漏极连续电流:90 A,电阻汲... | ||||||
IXTP01N100D | Ixys | TO-220-3 | 372 | MOSFET 0.1 Amps 1000V 110 Rds | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:1000 V,闸/源击穿电压:+/- 20 V,漏极连续电流:0.1 A,电... | ||||||
IXTP02N50D | Ixys | TO-220-3 | 50 | MOSFET 0.2 Amps 500V 30 Rds | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 20 V,漏极连续电流:0.2 A,电阻... | ||||||
IXTP05N100 | Ixys | TO-220-3 | MOSFET 0.75 Amps 1000V 15 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:1000 V,闸/源击穿电压:+/- 30 V,漏极连续电流:0.75 A,... | ||||||
IXTP05N100M | Ixys | TO-220-3 | 900 | MOSFET 0.5 Amps 1000V | ||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,... | ||||||
IXTP05N100P | Ixys | TO-220-3 | MOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on) | |||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,... | ||||||
IXTP06N120P | Ixys | TO-220-3 | MOSFET 0.6 Amps 1200V 32 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:1200 V,闸/源击穿电压:+/- 20 V,漏极连续电流:0.6 A,电... | ||||||
IXTP08N100D2 | Ixys | TO-220-3 | MOSFET N-CH MOSFETS 1000V 800MA | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:1000 V,闸/源击穿电压:+/- 20 V,漏极连续电流:0.8 A,电... | ||||||
IXTP08N100P | Ixys | TO-220-3 | 287 | MOSFET 0.8 Amps 1000V 20 Rds | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:1000 V,闸/源击穿电压:+/- 20 V,漏极连续电流:0.8 A,电... | ||||||
IXTP08N50D2 | Ixys | TO-220-3 | 1,828 | MOSFET N-CH MOSFETS 500V 800MA | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 20 V,漏极连续电流:0.8 A,电阻... | ||||||
IXTP100N04T2 | Ixys | TO-220-3 | 7 | MOSFET 100 Amps 40V | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:40 V,闸/源击穿电压:+/- 20 V,漏极连续电流:100 A,电阻汲... |
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