| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
ISL9N308AD3 | Fairchild Semiconductor | TO-251 | MOSFET N-Ch UltraFET Trench Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
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ISL9N308AD3ST | Fairchild Semiconductor | TO-252AA | MOSFET N-Ch UltraFET Trench Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
ISL9N308AP3 | Fairchild Semiconductor | TO-220AB | MOSFET N-Ch Trench MOSFET Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
ISL9N308AS3ST | Fairchild Semiconductor | TO-263AB | MOSFET N-Ch UltraFET Trench Logic Level | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
ISL9N310AD3 | Fairchild Semiconductor | TO-251 | MOSFET N-Ch LL UltraFET PWM Optimized | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
ISL9N310AD3ST | Fairchild Semiconductor | TO-252AA | MOSFET N-Ch LL UltraFET PWM Optimized | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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ISL9N310AP3 | Fairchild Semiconductor | TO-220AB | MOSFET N-Ch LL UltraFET PWM Optimized | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
ISL9N310AS3 | Fairchild Semiconductor | TO-262 | MOSFET N-Ch LL UltraFET PWM Optimized | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
ISL9N310AS3ST | Fairchild Semiconductor | TO-263AB | MOSFET N-Ch LL UltraFET PWM Optimized | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
ISL9N310AW1 | Fairchild Semiconductor | MOSFET | |||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，... | ||||||
|
ISL9N312AD3 | Fairchild Semiconductor | TO-251 | MOSFET N-Ch LL UltraFET PWM Optimized | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
ISL9N312AD3ST | Fairchild Semiconductor | TO-252AA | MOSFET N-Ch LL UltraFET PWM Optimized | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
ISL9N312AP3 | Fairchild Semiconductor | TO-220AB | MOSFET N-Ch LL UltraFET PWM Optimized | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
ISL9N312AS3ST | Fairchild Semiconductor | TO-263AB | MOSFET N-Ch LL UltraFET PWM Optimized | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
ISL9N315AD3 | Fairchild Semiconductor | TO-251 | MOSFET N-Ch LL UltraFET PWM Optimized | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
|
|
ISL9N315AD3ST | Fairchild Semiconductor | TO-252AA | MOSFET N-Ch LL UltraFET PWM Optimized | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
ISL9N316AD3ST | Fairchild Semiconductor | TO-252 | MOSFET TO-252 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
ISL9N316AP3 | Fairchild Semiconductor | TO-220AB | MOSFET TO-220 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
ISL9N316AS3ST | Fairchild Semiconductor | TO-263AB | MOSFET TO-263 | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
|
|
ISL9N318AD3ST | Fairchild Semiconductor | TO-252AA | MOSFET N-Ch LL UltraFET PWM Optimized | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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