| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
IRFI4121H-117P | International Rectifier | - | MOSFET MOSFT DUAL NCh 100V 11A | ||
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 2... | ||||||
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IRFI4212H-117P | International Rectifier | TO-220-5 整包 | MOSFET MOSFT DUAL NCh 100V 11A 5-Pin | ||
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:20 V,... | ||||||
|
IRFI4227PBF | International Rectifier | TO-220-3 整包 | 7,154 | MOSFET MOSFT 200V 26A 22mOhm 73nC | |
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:+/- 3... | ||||||
|
IRFI4228PBF | International Rectifier | TO-220-3 整包 | MOSFET MOSFT 150V 34A 16mOhm 73nC | ||
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:150 V,闸/源击穿电压:30 V,... | ||||||
|
IRFI4229PBF | International Rectifier | TO-220-3 | 1,004 | MOSFET MOSFT 250V 19A 46mOhm 73nC | |
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:250 V,闸/源击穿电压:+/- 3... | ||||||
|
IRFI4321PBF | International Rectifier | TO-220-3 整包 | 14,338 | MOSFET MOSFT 150V 34A 16mOhm 73nC | |
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:150 V,闸/源击穿电压:30 V,... | ||||||
|
IRFI4410ZGPBF | International Rectifier | TO-220AB 整包 | MOSFET MOSFT 100V 97A 9.3mOhm 81nC | ||
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:30 V,... | ||||||
|
IRFI4410ZPBF | International Rectifier | TO-220AB 整包 | 2,288 | MOSFET MOSFT 100V 65A 9.3mOhm 83nC | |
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:30 V,... | ||||||
|
|
IRFI510ATU | Fairchild Semiconductor | I2PAK | 574 | MOSFET | |
| 参数:制造商:Fairchild Semiconductor,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸... | ||||||
|
|
IRFI510G | Vishay/Siliconix | TO-220-3 | MOSFET N-Chan 100V 4.5 Amp | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
|
|
IRFI510GPBF | Vishay/Siliconix | TO-220-3 全封装,隔离接片 | 1,992 | MOSFET N-Chan 100V 4.5 Amp | |
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
|
|
IRFI520ATU | Fairchild Semiconductor | I2PAK | MOSFET | ||
| 参数:制造商:Fairchild Semiconductor,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 2... | ||||||
|
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IRFI520G | Vishay/Siliconix | TO-220-3 | MOSFET N-Chan 100V 7.2 Amp | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
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IRFI520GPBF | Vishay/Siliconix | TO-220-3 全封装,隔离接片 | 1,085 | MOSFET N-Chan 100V 7.2 Amp | |
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
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|
IRFI530ATU | Fairchild Semiconductor | I2PAK | MOSFET | ||
| 参数:制造商:Fairchild Semiconductor,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 2... | ||||||
|
IRFI530G | Vishay/Siliconix | TO-220-3 | MOSFET N-Chan 100V 9.7 Amp | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
|
IRFI530GPBF | Vishay/Siliconix | TO-220-3 | MOSFET N-Chan 100V 9.7 Amp | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
|
IRFI530NPBF | International Rectifier | TO-220-3 整包 | 3,778 | MOSFET MOSFT 100V 11A 110mOhm 29.3nC | |
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:20 V,... | ||||||
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IRFI540ATU | Fairchild Semiconductor | I2PAK | MOSFET | ||
| 参数:制造商:Fairchild Semiconductor,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 2... | ||||||
|
IRFI540G | Vishay/Siliconix | TO-220-3 | MOSFET N-Chan 100V 17 Amp | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
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