| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
IRF7455TRPBF | International Rectifier | 8-SO | MOSFET MOSFT 30V 15A 7.5mOhm 37nC | ||
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:12 V,漏... | ||||||
|
IRF7456PBF | International Rectifier | 8-SO | MOSFET 20V DUAL N-CH HEXFET 6.5mOhms 41nC | ||
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:12 V,漏... | ||||||
|
IRF7456TRPBF | International Rectifier | 8-SOIC(0.154",3.90mm 宽) | MOSFET MOSFT 20V 16A 6.5mOhm 41nC | ||
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:12 V,漏... | ||||||
|
IRF7457PBF | International Rectifier | 8-SO | MOSFET 20V 1 N-CH HEXFET 7mOhms 28nC | ||
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:20 V,漏... | ||||||
|
IRF7457TRPBF | International Rectifier | 8-SO | MOSFET MOSFT 20V 15A 7mOhm 28nC | ||
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:20 V,漏... | ||||||
|
IRF7458PBF | International Rectifier | 8-SO | MOSFET 30V 1 N-CH HEXFET 9mOhms 39nC | ||
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:30 V,漏... | ||||||
|
IRF7458TRPBF | International Rectifier | 8-SOIC(0.154",3.90mm 宽) | 12,550 | MOSFET MOSFT 30V 14A 9mOhm 39nC | |
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 30... | ||||||
|
IRF7459PBF | International Rectifier | 8-SO | MOSFET 20V 1 N-CH HEXFET 9mOhms 23nC | ||
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:12 V,漏... | ||||||
|
IRF7459TRPBF | International Rectifier | 8-SO | MOSFET MOSFT 20V 10A 9mOhm 23nC | ||
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:12 V,漏... | ||||||
|
IRF7460PBF | International Rectifier | 8-SO | MOSFET 20V 1 N-CH HEXFET 10mOhms 19nC | ||
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:20 V,漏... | ||||||
|
IRF7460TRPBF | International Rectifier | 8-SOIC(0.154",3.90mm 宽) | MOSFET MOSFT 20V 10A 10mOhm 19nC | ||
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:20 V,漏... | ||||||
|
IRF7463PBF | International Rectifier | 8-SO | MOSFET 30V 1 N-CH HEXFET 8mOhms 34nC | ||
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:12 V,漏... | ||||||
|
IRF7463TRPBF | International Rectifier | 8-SOIC(0.154",3.90mm 宽) | MOSFET MOSFT 30V 13A 8mOhm 34nC | ||
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:12 V,漏... | ||||||
|
IRF7464PBF | International Rectifier | 8-SO | MOSFET 200V 1 N-CH HEXFET 730mOhms 9.5nC | ||
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:30 V,... | ||||||
|
IRF7464TRPBF | International Rectifier | 8-SOIC(0.154",3.90mm 宽) | MOSFET MOSFT 200V 1.2A 730mOhm 9.5nC | ||
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:+/- 3... | ||||||
|
IRF7465PBF | International Rectifier | 8-SO | MOSFET 150V 1 N-CH HEXFET 280mOhms 10nC | ||
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:150 V,闸/源击穿电压:30 V,... | ||||||
|
IRF7465TRPBF | International Rectifier | 8-SOIC(0.154",3.90mm 宽) | MOSFET MOSFT 150V 1.9A 280mOhm 10nC | ||
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:150 V,闸/源击穿电压:30 V,... | ||||||
|
IRF7466PBF | International Rectifier | 8-SO | MOSFET 20V DUAL N-CH HEXFET 15mOhms 16nC | ||
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:20 V,漏... | ||||||
|
IRF7466TRPBF | International Rectifier | 8-SO | MOSFET MOSFT 30V 10A 15mOhm 16nC | ||
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:20 V,漏... | ||||||
|
IRF7467PBF | International Rectifier | 8-SO | MOSFET 30V 1 N-CH HEXFET 15mOhms 21nC | ||
| 参数:制造商:International Rectifier,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:12 V,漏... | ||||||
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