| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
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FGA20N120FTDTU | Fairchild Semiconductor | TO-3P | 104 | IGBT 晶体管 1200V N-Chan Trench | |
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1200... | ||||||
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FGA20S120M | Fairchild Semiconductor | TO-3P | IGBT 晶体管 1200V 20A SA FS | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,集电极—发射极最大电压 VCEO:1200 V,集电极—射极饱... | ||||||
|
FGA20S125P | Fairchild Semiconductor | TO-3PN | IGBT 晶体管 2.5A Output Current GateDrive Optocopler | ||
| 参数:制造商:Fairchild Semiconductor,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1250 V,集电极—射极饱和电压:... | ||||||
|
FGA20S140P | Fairchild Semiconductor | TO-3PN | IGBT 晶体管 USB Port Multimedia Switch | ||
| 参数:制造商:Fairchild Semiconductor,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1400 V,集电极—射极饱和电压:... | ||||||
|
FGA25N120ANDTU | Fairchild Semiconductor | TO-3P | IGBT 晶体管 Copak Discrete | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1200... | ||||||
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FGA25N120ANTDTU | Fairchild Semiconductor | TO-3P | IGBT 晶体管 Copak Discrete | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1200... | ||||||
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FGA25N120ANTDTU_F109 | Fairchild Semiconductor | TO-3PN-3 | 423 | IGBT 晶体管 Copak Discrete | |
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1200... | ||||||
|
FGA25N120ANTU | Fairchild Semiconductor | TO-3P | IGBT 晶体管 25A/1200V/NPT | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1200... | ||||||
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FGA25N120FTD | Fairchild Semiconductor | TO-3P | IGBT 晶体管 1200V 25A Field Stop Trench | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1200... | ||||||
|
FGA25S125P | Fairchild Semiconductor | TO-3PN | IGBT 晶体管 Shorted Anode IGBT | ||
| 参数:制造商:Fairchild Semiconductor,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1250 V,集电极—射极饱和电压:... | ||||||
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FGA30N120FTDTU | Fairchild Semiconductor | TO-3PN | IGBT 晶体管 1200V 30A FS | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1200... | ||||||
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FGA30N60LSDTU | Fairchild Semiconductor | TO-3P | 418 | IGBT 晶体管 30A 600V N-Ch Planar | |
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
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FGA30S120P | Fairchild Semiconductor | TO-3PN | IGBT 晶体管 Shorted AnodeTM IGBT | ||
| 参数:制造商:Fairchild Semiconductor,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1300 V,集电极—射极饱和电压:... | ||||||
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FGA40N60UFDTU | Fairchild Semiconductor | TO-3P | IGBT 晶体管 Ultrafast IGBT | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
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FGA40N65SMD | Fairchild Semiconductor | TO-3PN | IGBT 晶体管 650V, 40A Field Stop IGBT | ||
| 参数:制造商:Fairchild Semiconductor,RoHS:是,集电极—发射极最大电压 VCEO:650 V,集电极—射极饱和电压:2.5 V,栅极/发射... | ||||||
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FGA50N100BNTD2 | Fairchild Semiconductor | TO-3P | IGBT 晶体管 N-ch / 50A 1000V | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1000... | ||||||
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FGA50N100BNTDTU | Fairchild Semiconductor | TO-3P | IGBT 晶体管 600V 4 0A UFD | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1000... | ||||||
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FGA50N100BNTTU | Fairchild Semiconductor | TO-3P | IGBT 晶体管 N-CH / 50A 1000V NPT Trench | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,包装形式:Tube,工厂包装数量:30,... | ||||||
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FGA50N60LS | Fairchild Semiconductor | TO-3P | IGBT 晶体管 IGBT Short Circuit Rated | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
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FGA60N60UFDTU | Fairchild Semiconductor | TO-3PN | IGBT 晶体管 600V 60A FIELD STOP | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,包装形式:Tube,工厂包装数量:30,... | ||||||
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