| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
FS450R12OE4B81BPSA1 | Infineon Technologies | AG-ECONOPP | MEDIUM POWER ECONO | ||
| 参数：Infineon Technologies|托盘|EconoPACK?+|在售|沟槽型场截止|三相反相器|1200 V|450 A|20 mW|2.1V @ 1... | ||||||
|
FF1200R12IE5PBPSA1 | Infineon Technologies | 模块 | 1 | IGBT MOD 1200V 2400A 20MW | |
| 参数：Infineon Technologies|托盘|PrimePACK?2|在售|沟槽型场截止|半桥|1200 V|2400 A|20 mW|2.15V @ 15... | ||||||
|
FF1500R12IE5BPSA1 | Infineon Technologies | 模块 | IGBT MOD 1200V 1500A 20MW | ||
| 参数：Infineon Technologies|托盘|PrimePACK?3+ B|在售|沟槽型场截止|2 个独立式|1200 V|1500 A|20 mW|2.1... | ||||||
|
|
FF1500R17IP5BPSA1 | Infineon Technologies | 模块 | IGBT MOD 1700V 1500A 20MW | ||
| 参数：Infineon Technologies|托盘|PrimePACK?3+|在售|沟槽型场截止|2 个独立式|1700 V|1500 A|20 mW|2.2V ... | ||||||
|
|
FF1800R12IE5PBPSA1 | Infineon Technologies | 模块 | IGBT MOD 1200V 1800A 20MW | ||
| 参数：Infineon Technologies|托盘|PrimePACK?3+|在售|沟槽型场截止|2 个独立式|1200 V|1800 A|20 mW|2.15V... | ||||||
|
FZ1500R33HL3BPSA1 | Infineon Technologies | 模块 | 1 | IGBT MODULE 3300V 1500A | |
| 参数：Infineon Technologies|托盘|-|不适用于新设计|沟槽型场截止|全桥|3300 V|1500 A|17000 W|2.85V @ 15V，1... | ||||||
|
IXYN100N65C3H1 | IXYS | SOT-227B | 2 | IGBT MOD 650V 166A 600W SOT227B | |
| 参数：IXYS|管件|XPT?, GenX3?|在售|PT|单路|650 V|166 A|600 W|2.3V @ 15V，70A|50 μA|4.98 nF @ 2... | ||||||
|
VS-GT90DA120U | Vishay General Semiconductor - Diodes Division | SOT-227 | 160 | SOT-227 - SINGLE SWITCH IGBT + A | |
| 参数：Vishay General Semiconductor - Diodes Division|管件|-|在售|沟槽型场截止|单路|1200 V|169 A|78... | ||||||
|
IXYN110N120C4 | IXYS | SOT-227 | IGBT 1200V 110A GEN4 XPT SOT227B | ||
| 参数：IXYS|管件|XPT?|在售|-|单路|1200 V|220 A|830 W|2.4V @ 15V，110A|50 μA|5.42 nF @ 25 V|标准|... | ||||||
|
VS-ENV020F65U | Vishay General Semiconductor - Diodes Division | - | 10 | POWER MODULE | |
| 参数：Vishay General Semiconductor - Diodes Division|盒|*|在售|-|-|-|-|-|-|-|-|-|-|-|-|-|... | ||||||
|
|
VS-ENV020M120M | Vishay General Semiconductor - Diodes Division | - | 10 | POWER MODULE | |
| 参数：Vishay General Semiconductor - Diodes Division|盒|*|在售|-|-|-|-|-|-|-|-|-|-|-|-|-|... | ||||||
|
FP10R12W1T4B3BOMA1 | Infineon Technologies | 模块 | IGBT MOD 1200V 20A 105W | ||
| 参数：Infineon Technologies|散装|EasyPIM?|在售|沟槽型场截止|三相反相器|1200 V|20 A|105 W|2.25V @ 15V，... | ||||||
|
IXYN80N90C3H1 | IXYS | SOT-227B | IGBT MOD 900V 115A 500W SOT227B | ||
| 参数：IXYS|管件|XPT?, GenX3?|在售|-|单路|900 V|115 A|500 W|2.7V @ 15V，80A|25 μA|4.55 nF @ 25... | ||||||
|
FP10R12W1T7PB11BPSA1 | Infineon Technologies | AG-EASY1B | LOW POWER EASY AG-EASY1B-2 | ||
| 参数：Infineon Technologies|托盘|EasyPIM?|在售|沟槽型场截止|三相反相器|1200 V|10 A|20 mW|-|4.5 μA|189... | ||||||
|
A1C15S12M3-F | STMicroelectronics | ACEPACK? 1 | IGBT MOD 1200V 15A ACEPACK1 | ||
| 参数：STMicroelectronics|托盘|-|在售|沟槽型场截止|三相反相器，带制动器|1200 V|15 A|142.8 W|2.45V @ 15V，15A... | ||||||
|
|
VS-ENY050C60 | Vishay General Semiconductor - Diodes Division | - | 10 | POWER MODULE | |
| 参数：Vishay General Semiconductor - Diodes Division|盒|*|在售|-|-|-|-|-|-|-|-|-|-|-|-|-|... | ||||||
|
FS50R12W1T7BOMA1 | Infineon Technologies | AG-EASY1B | LOW POWER EASY AG-EASY1B-1 | ||
| 参数：Infineon Technologies|托盘|EasyPACK?|在售|沟槽型场截止|三相反相器|1200 V|50 A|20 mW|-|7.9 μA|11... | ||||||
|
|
VS-ENM040M60P | Vishay General Semiconductor - Diodes Division | - | 10 | POWER MODULE | |
| 参数：Vishay General Semiconductor - Diodes Division|盒|*|在售|-|-|-|-|-|-|-|-|-|-|-|-|-|... | ||||||
|
|
VS-ENZ025C60N | Vishay General Semiconductor - Diodes Division | - | 10 | POWER MODULE | |
| 参数：Vishay General Semiconductor - Diodes Division|盒|*|在售|-|-|-|-|-|-|-|-|-|-|-|-|-|... | ||||||
|
|
FS50R12W1T7PB11BPSA1 | Infineon Technologies | - | LOW POWER EASY AG-EASY1B-711 | ||
| 参数：Infineon Technologies|托盘|*|在售|-|-|-|-|-|-|-|-|-|-|-|-|-|-|... | ||||||
224/234 首页 上页 [219] [220] [221] [222] [223] [224] [225] [226] [227] [228] [229] 下页 尾页
