| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
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APT60GA60JD60 | Microchip Technology | SOT-227-4 | 1500 | IGBT MOD 600V 112A 356W ISOTOP | |
| 参数：Microchip Technology|管件|POWER MOS 8?|在售|PT|单路|600 V|112 A|356 W|2.5V @ 15V，62A|2... | ||||||
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IXXN100N60B3H1 | IXYS | SOT-227B | IGBT MOD 600V 170A 500W SOT227B | ||
| 参数：IXYS|管件|XPT?, GenX3?|在售|PT|单路|600 V|170 A|500 W|1.8V @ 15V，70A|50 μA|4.86 nF @ 2... | ||||||
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IXYN120N120C3 | IXYS | SOT-227B | IGBT MOD 1200V 240A SOT227B | ||
| 参数：IXYS|管件|XPT?, GenX3?|在售|-|单路|1200 V|240 A|1200 W|3.2V @ 15V，120A|25 μA|-|标准|无|-5... | ||||||
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APT70GR120JD60 | Microchip Technology | SOT-227-4 | 1500 | IGBT MOD 1200V 112A 543W SOT227 | |
| 参数：Microchip Technology|管件|-|在售|NPT|单路|1200 V|112 A|543 W|3.2V @ 15V，70A|1.1 mA|7.2... | ||||||
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IXYN100N120B3H1 | IXYS | SOT-227B | IGBT MOD 1200V 165A 690W SOT227B | ||
| 参数：IXYS|管件|XPT?, GenX3?|在售|PT|单路|1200 V|165 A|690 W|2.6V @ 15V，100A|50 μA|6 nF @ 25... | ||||||
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APT85GR120JD60 | Microchip Technology | SOT-227-4 | 1500 | IGBT MOD 1200V 116A 543W SOT227 | |
| 参数：Microchip Technology|管件|-|在售|NPT|单路|1200 V|116 A|543 W|3.2V @ 15V，85A|1.1 mA|8.4... | ||||||
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FP10R12W1T4BOMA1 | Infineon Technologies | 模块 | IGBT MOD 1200V 20A 105W | ||
| 参数：Infineon Technologies|托盘|EasyPIM?|在售|沟槽型场截止|三相反相器|1200 V|20 A|105 W|2.25V @ 15V，... | ||||||
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FP10R12W1T4B11BOMA1 | Infineon Technologies | 模块 | IGBT MOD 1200V 20A 105W | ||
| 参数：Infineon Technologies|托盘|EconoPIM? 3|在售|-|三相反相器|1200 V|20 A|105 W|2.25V @ 15V，10... | ||||||
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IXYN100N120C3 | IXYS | SOT-227B | IGBT MOD 1200V 152A 830W SOT227B | ||
| 参数：IXYS|管件|XPT?, GenX3?|在售|-|单路|1200 V|152 A|830 W|3.5V @ 15V，100A|25 μA|6 nF @ 25 ... | ||||||
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FS25R12W1T4B11BOMA1 | Infineon Technologies | 模块 | 4 | IGBT MOD 1200V 45A 205W | |
| 参数：Infineon Technologies|托盘|EasyPACK?|在售|沟槽型场截止|三相反相器|1200 V|45 A|205 W|2.25V @ 15V... | ||||||
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FP50R06W2E3BOMA1 | Infineon Technologies | 模块 | IGBT MODULE 600V 65A 175W | ||
| 参数：Infineon Technologies|托盘|-|在售|沟槽型场截止|三相反相器|600 V|65 A|175 W|1.9V @ 15V，50A|1 mA|... | ||||||
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FP35R12W2T4BOMA1 | Infineon Technologies | 模块 | 2 | IGBT MOD 1200V 54A 215W | |
| 参数：Infineon Technologies|托盘|EasyPIM?|在售|沟槽型场截止|三相反相器|1200 V|54 A|215 W|2.25V @ 15V，... | ||||||
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FP35R12W2T4B11BOMA1 | Infineon Technologies | 模块 | IGBT MOD 1200V 54A 215W | ||
| 参数：Infineon Technologies|托盘|-|在售|沟槽型场截止|三相反相器|1200 V|54 A|215 W|2.25V @ 15V，35A|1 m... | ||||||
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FP35R12W2T4PB11BPSA1 | Infineon Technologies | 模块 | IGBT MOD 1200V 70A 20MW | ||
| 参数：Infineon Technologies|托盘|EasyPIM? 2B|在售|沟槽型场截止|三相反相器|1200 V|70 A|20 mW|2.2V @ 15... | ||||||
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DDB6U75N16W1RBOMA1 | Infineon Technologies | 模块 | IGBT MOD 1200V 69A 335W | ||
| 参数：Infineon Technologies|托盘|-|在售|-|三相反相器|1200 V|69 A|335 W|2.15V @ 15V，50A|1 mA|2.8... | ||||||
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FS75R12W2T7B11BOMA1 | Infineon Technologies | 模块 | IGBT MOD 1200V 75A | ||
| 参数：Infineon Technologies|托盘|EasyPACK?|在售|沟槽型场截止|全桥|1200 V|65 A|20 mW|1.55V @ 15V，75... | ||||||
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FD150R12RT4HOSA1 | Infineon Technologies | 模块 | IGBT MOD 1200V 150A 790W | ||
| 参数：Infineon Technologies|托盘|C|在售|沟槽型场截止|单斩波器|1200 V|150 A|790 W|2.15V @ 15V，150A|1 ... | ||||||
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FF100R12RT4HOSA1 | Infineon Technologies | 模块 | IGBT MOD 1200V 100A 555W | ||
| 参数：Infineon Technologies|托盘|-|在售|沟槽型场截止|2 个独立式|1200 V|100 A|555 W|2.15V @ 15V，100A|... | ||||||
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FS75R12W2T4B11BOMA1 | Infineon Technologies | 模块 | IGBT MOD 1200V 107A 375W | ||
| 参数：Infineon Technologies|托盘|EasyPACK?|在售|沟槽型场截止|全桥|1200 V|107 A|375 W|2.15V @ 15V，7... | ||||||
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F3L200R12W2H3B11BPSA1 | Infineon Technologies | 模块 | IGBT MOD 1200V 100A 600W | ||
| 参数：Infineon Technologies|托盘|EasyPACK?|在售|-|三相反相器|1200 V|100 A|600 W|1.75V @ 15V，100... | ||||||
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