| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
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MIEB101H1200EH | IXYS | E3 | 40 | IGBT MODULE 1200V 183A 630W E3 | |
| 参数:IXYS|盒|-|在售|-|全桥反相器|1200 V|183 A|630 W|2.2V @ 15V,100A|300 μA|7.43 nF @ 25 V|标准|... | ||||||
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VS-GT75YF120UT | Vishay General Semiconductor - Diodes Division | - | 108 | ECONO - 4 PACK IGBT | |
| 参数:Vishay General Semiconductor - Diodes Division|盒|-|在售|沟槽型场截止|全桥|1200 V|118 A|431... | ||||||
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NXH450B100H4Q2F2PG | onsemi | 56-PIM(93x47) | 35 | 1000V,75A FSIII IGBT, MID SPEED | |
| 参数:onsemi|托盘|-|在售|-|2 个独立式|1000 V|101 A|234 W|2.25V @ 15V,150A|600 μA|9.342 nF @ 20... | ||||||
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A2U12M12W2-F2 | STMicroelectronics | ACEPACK? 2 | 49 | ACEPACK 2 POWER MODULE, 3-LEVEL | |
| 参数:STMicroelectronics|托盘|-|在售|-|三级反相器|-|-|-|-|-|7 nF @ 800 V|标准|是|175°C(TJ)|底座安装|模块... | ||||||
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A2F12M12W2-F1 | STMicroelectronics | ACEPACK? 2 | 29 | ACEPACK 2 POWER MODULE, FOURPACK | |
| 参数:STMicroelectronics|托盘|-|在售|-|全桥|-|-|-|-|-|7 nF @ 800 V|标准|是|175°C(TJ)|底座安装|模块|AC... | ||||||
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NXH350N100H4Q2F2P1G | onsemi | 42-PIM/Q2PACK(93x47) | 36 | IC PWR MODULE 1000V 350A PIM42 | |
| 参数:onsemi|托盘|-|在售|沟槽型场截止|三级反相器|1000 V|303 A|276 W|2.3V @ 15V,375A|1 mA|24.146 nF @ ... | ||||||
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NXH350N100H4Q2F2S1G-R | onsemi | 42-PIM/Q2PACK(93x47) | 72 | GEN1.5 1500V MASS MARKET | |
| 参数:onsemi|托盘|-|在售|沟槽型场截止|三级反相器|1000 V|303 A|592 W|2.3V @ 15V,375A|1 mA|24146 pF @ 2... | ||||||
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NXH400N100H4Q2F2SG | onsemi | 42-PIM/Q2PACK(93x47) | 36 | MASS MARKET 250KW 1500V Q2 PACK | |
| 参数:onsemi|托盘|-|在售|沟槽型场截止|三级反相器|1000 V|409 A|959 W|2.3V @ 15V,400A|500 μA|26.093 nF ... | ||||||
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NXH400N100H4Q2F2PG | onsemi | 42-PIM/Q2PACK(93x47) | 36 | MASS MARKET 250KW 1500V Q2 PACK | |
| 参数:onsemi|托盘|-|在售|沟槽型场截止|三级反相器|1000 V|409 A|959 W|2.3V @ 15V,400A|500 μA|26.093 nF ... | ||||||
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MG12300D-BN2MM | Littelfuse Inc. | D3 | 26 | IGBT MODULE 1200V 480A 1450W D3 | |
| 参数:Littelfuse Inc.|散装|-|停产|-|半桥|1200 V|480 A|1450 W|1.7V @ 15V,300A|1 mA|21 nF @ 25... | ||||||
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IM241S6S1JAUMA1 | Infineon Technologies | 23-SOP | 341 | CIPOS MICRO | |
| 参数:Infineon Technologies|卷带(TR),剪切带(CT),Digi-Reel? 得捷定制卷带|IM241, CIPOS?|在售|-|三相反相器|... | ||||||
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2ED300C17SROHSBPSA1 | Infineon Technologies | 模块 | 24 | IGBT MODULE 1700V 30A | |
| 参数:Infineon Technologies|托盘|EiceDriver?|在售|-|半桥|1700 V|-|-|-|-|-|标准|无|-25°C ~ 85°C|... | ||||||
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FF300R12KE4HOSA1 | Infineon Technologies | 模块 | 10 | IGBT MOD 1200V 460A 1600W | |
| 参数:Infineon Technologies|托盘|C|在售|沟槽型场截止|2 个独立式|1200 V|460 A|1600 W|2.15V @ 15V,300A... | ||||||
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FS820R08A6P2BBPSA1 | Infineon Technologies | AG-HYBRIDD-2 | 20 | IGBT MODULE PACK DRV HYBRIDD-1 | |
| 参数:Infineon Technologies|托盘|HybridPACK?|在售|沟槽型场截止|三相反相器|750 V|450 A|714 W|1.35V @ 1... | ||||||
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FP25R12W2T4B11BOMA1 | Infineon Technologies | 模块 | 83 | IGBT MOD 1200V 39A 175W | |
| 参数:Infineon Technologies|托盘|-|在售|沟槽型场截止|三相反相器|1200 V|39 A|175 W|2.25V @ 15V,25A|1 m... | ||||||
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FS50R12W2T4BOMA1 | Infineon Technologies | 模块 | 30 | IGBT MOD 1200V 83A 335W | |
| 参数:Infineon Technologies|托盘|EasyPACK?|在售|沟槽型场截止|全桥反相器|1200 V|83 A|335 W|2.15V @ 15V... | ||||||
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FF200R12KE3HOSA1 | Infineon Technologies | 模块 | 4 | IGBT MODULE 1200V 1050W | |
| 参数:Infineon Technologies|托盘|-|在售|-|2 个独立式|1200 V|-|1050 W|2.15V @ 15V,200A|5 mA|14 ... | ||||||
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FZ600R12KE3HOSA1 | Infineon Technologies | 模块 | 7 | IGBT MOD 1200V 900A 2800W | |
| 参数:Infineon Technologies|托盘|-|在售|沟槽型场截止|单路|1200 V|900 A|2800 W|2.15V @ 15V,600A|5 m... | ||||||
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FZ600R17KE3HOSA1 | Infineon Technologies | 模块 | IGBT MOD 1700V 840A 3150W | ||
| 参数:Infineon Technologies|托盘|C|在售|沟槽型场截止|单路|1700 V|840 A|3150 W|2.45V @ 15V,600A|3 m... | ||||||
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FF600R12KE4BOSA1 | Infineon Technologies | 模块 | 5 | IGBT MODULE 1200V 600A | |
| 参数:Infineon Technologies|托盘|C|在售|沟槽型场截止|半桥|1200 V|600 A|-|2.2V @ 15V,600A|5 mA|38 n... | ||||||
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