| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
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SGP10N60RUFDTU | Fairchild Semiconductor | TO-220-3 | IGBT 晶体管 Dis Short Circuit Rated IGBT | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
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SGP10N60RUFTU | Fairchild Semiconductor | TO-220-3 | IGBT 晶体管 | ||
| 参数:制造商:Fairchild Semiconductor,RoHS:否,配置:Single,集电极—发射极最大电压 VCEO:600 V,栅极/发射极最大电压:+... | ||||||
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SGP13N60UFDTU | Fairchild Semiconductor | TO-220-3 | IGBT 晶体管 Dis High Perf IGBT | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
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SGP13N60UFTU | Fairchild Semiconductor | TO-220-3 | IGBT 晶体管 Dis High Perf IGBT | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
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SGP15N120 | Infineon Technologies | TO-220AB-3 | IGBT 晶体管 FAST IGBT NPT TECH 1200V 15A | ||
| 参数:制造商:Infineon,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:1200 V,栅极/发射极最大电压:+... | ||||||
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SGP15N60 | Infineon Technologies | TO-220AB-3 | 50 | IGBT 晶体管 FAST IGBT NPT TECH 600V 15A | |
| 参数:制造商:Infineon,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 V,栅极/发射极最大电压:+/... | ||||||
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SGP15N60RUFTU | Fairchild Semiconductor | TO-220-3 | IGBT 晶体管 | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
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SGP20N60 | Infineon Technologies | TO-220AB-3 | IGBT 晶体管 FAST IGBT NPT TECH 600V 20A | ||
| 参数:制造商:Infineon,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 V,栅极/发射极最大电压:+/... | ||||||
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SGP20N60HS | Infineon Technologies | TO-220-3 | IGBT 晶体管 HIGH SPEED NPT TECH 600V 20A | ||
| 参数:制造商:Infineon,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 V,栅极/发射极最大电压:+/... | ||||||
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SGP20N60RUFTU | Fairchild Semiconductor | TO-220-3 | IGBT 晶体管 | ||
| 参数:制造商:Fairchild Semiconductor,RoHS:否,配置:Single,集电极—发射极最大电压 VCEO:600 V,栅极/发射极最大电压:+... | ||||||
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SGP23N60UFDTU | Fairchild Semiconductor | TO-220-3 | IGBT 晶体管 Dis High Perf IGBT | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
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SGP23N60UFTU | Fairchild Semiconductor | TO-220-3 | IGBT 晶体管 Dis High Perf IGBT | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
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SGP30N60 | Infineon Technologies | TO-220AB-3 | IGBT 晶体管 FAST IGBT NPT TECH 600V 30A | ||
| 参数:制造商:Infineon,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 V,栅极/发射极最大电压:+/... | ||||||
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SGP30N60HS | Infineon Technologies | TO-220AB-3 | IGBT 晶体管 HIGH SPEED NPT TECH 600V 30A | ||
| 参数:制造商:Infineon,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 V,栅极/发射极最大电压:+/... | ||||||
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SGP40N60UFTU | Fairchild Semiconductor | TO-220-3 | IGBT 晶体管 Dis High Perf IGBT | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
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SGP5N60RUFDTU | Fairchild Semiconductor | TO-220-3 | IGBT 晶体管 Dis Short Circuit Rated IGBT | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
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SGP5N60RUFTU | Fairchild Semiconductor | TO-220-3 | IGBT 晶体管 | ||
| 参数:制造商:Fairchild Semiconductor,RoHS:否,配置:Single,集电极—发射极最大电压 VCEO:600 V,栅极/发射极最大电压:+... | ||||||
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SGP6N60UFDTU | Fairchild Semiconductor | TO-220-3 | IGBT 晶体管 Dis High Perf IGBT | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:600 ... | ||||||
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SGP6N60UFTU | Fairchild Semiconductor | TO-220AB-3 | IGBT 晶体管 | ||
| 参数:制造商:Fairchild Semiconductor,RoHS:否,配置:Single,集电极—发射极最大电压 VCEO:600 V,栅极/发射极最大电压:+... | ||||||
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SGR15N40LTF | Fairchild Semiconductor | TO-252AA | IGBT 晶体管 LL/400V/130A | ||
| 参数:制造商:Fairchild Semiconductor,产品种类:IGBT 晶体管,RoHS:是,配置:Single,集电极—发射极最大电压 VCEO:400 ... | ||||||
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