| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
IXJ611S1T/R | Ixys | 8-SOIC | 功率驱动器IC 0.6 Amps 35V 25 Rds | ||
| 参数:制造商:IXYS,RoHS:是,包装形式:Tube,工厂包装数量:2500,... | ||||||
|
IXK611S1T/R | Ixys | 8-SOIC | 功率驱动器IC 0.6 Amps 35V 25 Rds | ||
| 参数:制造商:IXYS,RoHS:是,包装形式:Tube,工厂包装数量:2500,... | ||||||
|
IXDR502D1B | Ixys | 6-VDFN 裸露焊盘 | 功率驱动器IC 2 Amps V 4 Rds | ||
| 参数:制造商:IXYS,RoHS:是,类型:High Side/Low Side,上升时间:12 ns,下降时间:10 ns,电源电压-最小:4.5 V,电源电流:2... | ||||||
|
IXDS430SI | Ixys | 28-SOIC | 功率驱动器IC 30 Amps SelectableV 0.4 Rds | ||
| 参数:制造商:IXYS,RoHS:是,类型:Low Side Gate Driver,上升时间:20 ns,下降时间:18 ns,电源电压-最小:8.5 V,电源电流... | ||||||
|
IXDS502D1B | Ixys | 6-VDFN 裸露焊盘 | 功率驱动器IC 2 Amps V 4 Rds | ||
| 参数:制造商:IXYS,RoHS:是,类型:High Side/Low Side,上升时间:12 ns,下降时间:10 ns,电源电压-最小:4.5 V,电源电流:2... | ||||||
|
IXE611S1T/R | Ixys | 8-SOIC | 功率驱动器IC 0.6 Amps 35V 25 Rds | ||
| 参数:制造商:IXYS,RoHS:是,包装形式:Tube,工厂包装数量:2500,... | ||||||
|
IXF611S1T/R | Ixys | 8-SOIC | 功率驱动器IC 0.6 Amps 35V 25 Rds | ||
| 参数:制造商:IXYS,RoHS:是,包装形式:Tube,工厂包装数量:2500,... | ||||||
|
IXFK240N15T2 | Ixys | TO-264-3,TO-264AA | 1,084 | 功率驱动器IC GigaMOS Trench T2 HiperFET PWR MOSFET | |
| 参数:制造商:IXYS,RoHS:是,产品:MOSFET Gate Drivers,类型:GigaMOS Trench T2 HiperFet,上升时间:125 ns... | ||||||
|
IXFK320N17T2 | Ixys | TO-264AA(IXFK) | 功率驱动器IC GigaMOS Trench T2 HiperFET PWR MOSFET | ||
| 参数:制造商:IXYS,RoHS:是,产品:MOSFET Gate Drivers,类型:GigaMOS Trench T2 HiperFet,上升时间:170 ns... | ||||||
|
IXFK360N15T2 | Ixys | TO-264-3,TO-264AA | 功率驱动器IC GigaMOS Trench T2 HiperFET PWR MOSFET | ||
| 参数:制造商:IXYS,RoHS:是,产品:MOSFET Gate Drivers,类型:GigaMOS Trench T2 HiperFet,上升时间:170 ns... | ||||||
|
IXFN240N15T2 | Ixys | SOT-227B | 功率驱动器IC GigaMOS Trench T2 HiperFET PWR MOSFET | ||
| 参数:制造商:IXYS,RoHS:是,产品:MOSFET Gate Drivers,类型:GigaMOS Trench T2 HiperFet,上升时间:125 ns... | ||||||
|
IXFN320N17T2 | Ixys | SOT-227B | 功率驱动器IC GigaMOS Trench T2 HiperFET PWR MOSFET | ||
| 参数:制造商:IXYS,RoHS:是,产品:MOSFET Gate Drivers,类型:GigaMOS Trench T2 HiperFet,上升时间:170 ns... | ||||||
|
IXFN360N15T2 | Ixys | SOT-227-4,miniBLOC | 500 | 功率驱动器IC GigaMOS Trench T2 HiperFET PWR MOSFET | |
| 参数:制造商:IXYS,RoHS:是,产品:MOSFET Gate Drivers,类型:GigaMOS Trench T2 HiperFet,上升时间:170 ns... | ||||||
|
IXFN520N075T2 | Ixys | SOT-227-4,miniBLOC | 功率驱动器IC GigaMOS Trench T2 HiperFET PWR MOSFET | ||
| 参数:制造商:IXYS,RoHS:是,产品:MOSFET Gate Drivers,类型:TrenchT2 GigaMOS HiperFet,上升时间:36 ns,下... | ||||||
|
IXFX240N15T2 | Ixys | PLUS247?-3 | 4 | 功率驱动器IC GigaMOS Trench T2 HiperFET PWR MOSFET | |
| 参数:制造商:IXYS,RoHS:是,产品:MOSFET Gate Drivers,类型:GigaMOS Trench T2 HiperFet,上升时间:125 ns... | ||||||
|
IXFX320N17T2 | Ixys | TO-247-3 变式 | 功率驱动器IC GigaMOS Trench T2 HiperFET PWR MOSFET | ||
| 参数:制造商:IXYS,RoHS:是,产品:MOSFET Gate Drivers,类型:GigaMOS Trench T2 HiperFet,上升时间:170 ns... | ||||||
|
IXFX360N15T2 | Ixys | TO-247-3 变式 | 532 | 功率驱动器IC GigaMOS Trench T2 HiperFET PWR MOSFET | |
| 参数:制造商:IXYS,RoHS:是,产品:MOSFET Gate Drivers,类型:GigaMOS Trench T2 HiperFet,上升时间:170 ns... | ||||||
|
IXH611S1T/R | Ixys | 8-SOIC | 功率驱动器IC 0.6 Amps 35V 25 Rds | ||
| 参数:制造商:IXYS,RoHS:是,包装形式:Tube,工厂包装数量:2500,... | ||||||
|
IX2A11S1T/R | Ixys | 8-SOIC | 功率驱动器IC 2 Amps 35V 7.5 Rds | ||
| 参数:制造商:IXYS,RoHS:是,包装形式:Tube,工厂包装数量:2500,... | ||||||
|
IX2B11S7T/R | Ixys | 14-SOIC | 功率驱动器IC 2 Amps 35V 7.5 Rds | ||
| 参数:制造商:IXYS,RoHS:是,包装形式:Tube,工厂包装数量:2500,... | ||||||
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