TE Connectivity / Holsworthy
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| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
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CRGV2010F2M1 | TE Connectivity / Holsworthy | 2010 (5025 metric) | 厚膜电阻器 - SMD CRGV2010 1% 2M1 3000V | ||
| 参数:制造商:TE Connectivity,RoHS:是,电阻:2.1 MOhms,容差:1 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,... | ||||||
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CRGV2010F2M15 | TE Connectivity / Holsworthy | 2010 (5025 metric) | 厚膜电阻器 - SMD CRGV2010 1% 2M15 3000V | ||
| 参数:制造商:TE Connectivity,RoHS:是,电阻:2.15 MOhms,容差:1 %,功率额定值:500 mW (1/2 W),电压额定值:200 V... | ||||||
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CRGV2010F2M26 | TE Connectivity / Holsworthy | 2010 (5025 metric) | 厚膜电阻器 - SMD 2.26M Ohms 1% 200ppm .50 Watt 2010 | ||
| 参数:制造商:TE Connectivity,电阻:2.26 MOhms,容差:1 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,外壳代码 -... | ||||||
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CRGV2010F2M32 | TE Connectivity / Holsworthy | 2010 (5025 metric) | 厚膜电阻器 - SMD CRGV2010 1% 2M32 3000V | ||
| 参数:制造商:TE Connectivity,RoHS:是,电阻:2.32 MOhms,容差:1 %,功率额定值:500 mW (1/2 W),电压额定值:200 V... | ||||||
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CRGV2010F2M37 | TE Connectivity / Holsworthy | 2010 (5025 metric) | 厚膜电阻器 - SMD CRGV2010 1% 2M37 3000V | ||
| 参数:制造商:TE Connectivity,RoHS:是,电阻:2.37 MOhms,容差:1 %,功率额定值:500 mW (1/2 W),电压额定值:200 V... | ||||||
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CRGV2010F2M43 | TE Connectivity / Holsworthy | 2010 (5025 metric) | 厚膜电阻器 - SMD 2.43M Ohms 1% 200ppm .50 Watt 2010 | ||
| 参数:制造商:TE Connectivity,电阻:2.43 MOhms,容差:1 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,外壳代码 -... | ||||||
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CRGV2010F2M55 | TE Connectivity / Holsworthy | 2010 (5025 metric) | 厚膜电阻器 - SMD 2.55M Ohms 1% 200ppm .50 Watt 2010 | ||
| 参数:制造商:TE Connectivity,电阻:2.55 MOhms,容差:1 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,外壳代码 -... | ||||||
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CRGV2010F2M74 | TE Connectivity / Holsworthy | 2010 (5025 metric) | 厚膜电阻器 - SMD CRGV2010 1% 2M74 3000V | ||
| 参数:制造商:TE Connectivity,RoHS:是,电阻:2.74 MOhms,容差:1 %,功率额定值:500 mW (1/2 W),电压额定值:200 V... | ||||||
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CRGV2010F2M87 | TE Connectivity / Holsworthy | 2010 (5025 metric) | 厚膜电阻器 - SMD 2.87 Ohms 1% 200ppm .50 Watt 2010 | ||
| 参数:制造商:TE Connectivity,电阻:2.87 MOhms,容差:1 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,外壳代码 -... | ||||||
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CRGV2010F2M94 | TE Connectivity / Holsworthy | 2010 (5025 metric) | 厚膜电阻器 - SMD CRGV2010 1% 2M94 3000V | ||
| 参数:制造商:TE Connectivity,RoHS:是,电阻:2.94 MOhms,容差:1 %,功率额定值:500 mW (1/2 W),电压额定值:200 V... | ||||||
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CRGV2010F301K | TE Connectivity / Holsworthy | 2010 (5025 metric) | 厚膜电阻器 - SMD CRGV2010 1% 301K 3000V | ||
| 参数:制造商:TE Connectivity,RoHS:是,电阻:301 kOhms,容差:1 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,... | ||||||
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CRGV2010F309K | TE Connectivity / Holsworthy | 2010 (5025 metric) | 厚膜电阻器 - SMD 309 Ohms 1% 200ppm .50 Watt 2010 | ||
| 参数:制造商:TE Connectivity,电阻:309 kOhms,容差:1 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,外壳代码 - ... | ||||||
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CRGV2010F316K | TE Connectivity / Holsworthy | 2010 (5025 metric) | 厚膜电阻器 - SMD 316 Ohms 1% 200ppm .50 Watt 2010 | ||
| 参数:制造商:TE Connectivity,电阻:316 kOhms,容差:1 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,外壳代码 - ... | ||||||
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CRGV2010F332K | TE Connectivity / Holsworthy | 2010 (5025 metric) | 厚膜电阻器 - SMD 332 Ohms 1% 200ppm .50 Watt 2010 | ||
| 参数:制造商:TE Connectivity,电阻:332 kOhms,容差:1 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,外壳代码 - ... | ||||||
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CRGV2010F340K | TE Connectivity / Holsworthy | 2010 (5025 metric) | 厚膜电阻器 - SMD CRGV2010 1% 340K 3000V | ||
| 参数:制造商:TE Connectivity,RoHS:是,电阻:340 kOhms,容差:1 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,... | ||||||
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CRGV2010F357K | TE Connectivity / Holsworthy | 2010 (5025 metric) | 厚膜电阻器 - SMD CRGV2010 1% 357K 3000V | ||
| 参数:制造商:TE Connectivity,RoHS:是,电阻:357 kOhms,容差:1 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,... | ||||||
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CRGV2010F374K | TE Connectivity / Holsworthy | 2010 (5025 metric) | 厚膜电阻器 - SMD CRGV2010 1% 374K 3000V | ||
| 参数:制造商:TE Connectivity,RoHS:是,电阻:374 kOhms,容差:1 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,... | ||||||
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CRGV2010F392K | TE Connectivity / Holsworthy | 2010 (5025 metric) | 厚膜电阻器 - SMD CRGV2010 1% 392K 3000V | ||
| 参数:制造商:TE Connectivity,RoHS:是,电阻:392 kOhms,容差:1 %,功率额定值:500 mW (1/2 W),电压额定值:200 V,... | ||||||
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CRGV2010F3M09 | TE Connectivity / Holsworthy | 2010 (5025 metric) | 厚膜电阻器 - SMD CRGV2010 1% 3M09 3000V | ||
| 参数:制造商:TE Connectivity,RoHS:是,电阻:3.09 MOhms,容差:1 %,功率额定值:500 mW (1/2 W),电压额定值:200 V... | ||||||
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CRGV2010F3M16 | TE Connectivity / Holsworthy | 2010 (5025 metric) | 厚膜电阻器 - SMD CRGV2010 1% 3M16 3000V | ||
| 参数:制造商:TE Connectivity,RoHS:是,电阻:3.16 MOhms,容差:1 %,功率额定值:500 mW (1/2 W),电压额定值:200 V... | ||||||
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