Vishay/Siliconix
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Vishay/Siliconix功率MOSFET晶体管和集成电路 (IC)用于管理和转换计算机、手机和通信基础架构中的电源,也可用计算机磁盘驱动器和汽车系统中的运动控制。 Vishay/Siliconix模拟开关IC用于对仪表仪器和多种工业产品中的模拟信号进行感应、开关和路径设定。 |
| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
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SI7405DN-T1-E3 | Vishay/Siliconix | PowerPAK 1212-8 | MOSFET 12V 13A 3.8W | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:12 V,闸/源击穿电压:+/- 8 V,漏极连... | ||||||
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SI7407DN-T1 | Vishay/Siliconix | PowerPAK 1212-8 | MOSFET 12V 15.6A 1.5W | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:否,晶体管极性:P-Channel,汲极/源极击穿电压:12 V,闸/源击穿电压:+/- 8 V,漏极连... | ||||||
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SI7407DN-T1-E3 | Vishay/Siliconix | PowerPAK? 1212-8 | MOSFET 12V 15.6A 3.8W 12mohm @ 4.5V | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:12 V,闸/源击穿电压:+/- 8 V,漏极连... | ||||||
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SI7407DN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 | MOSFET 12V 15.6A 3.8W 12mohm @ 4.5V | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:12 V,闸/源击穿电压:+/- 8 V,漏极连... | ||||||
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SI7409ADN-T1-E3 | Vishay/Siliconix | PowerPAK? 1212-8 | MOSFET 30V 11A 3.8W 19mohm @ 4.5V | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 12 V,漏极... | ||||||
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SI7409ADN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 | MOSFET 30V 11A 3.8W 19mohm @ 4.5V | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 12 V,漏极... | ||||||
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SI7411DN-T1-E3 | Vishay/Siliconix | PowerPAK? 1212-8 | MOSFET 20V 11A 3.8W | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:+/- 8 V,漏极连... | ||||||
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SI7411DN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 | MOSFET 20V 11.4A 3.6W 19mohm @ 4.5V | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:+/- 8 V,漏极连... | ||||||
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SI7413DN-T1-E3 | Vishay/Siliconix | PowerPAK? 1212-8 | MOSFET 20V 13.2A 3.8W | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:+/- 8 V,漏极连... | ||||||
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SI7413DN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 | MOSFET 20V 13.2A 3.8W 15mohm @ 4.5V | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:+/- 8 V,漏极连... | ||||||
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SI7414DN-T1 | Vishay/Siliconix | PowerPAK 1212-8 | MOSFET 60V 8A 0.025 OHMS | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20 V,漏极... | ||||||
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SI7414DN-T1-E3 | Vishay/Siliconix | PowerPAK? 1212-8 | 477 | MOSFET 60V 8A 0.025 OHMS | |
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20 V,漏极... | ||||||
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SI7414DN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 | MOSFET 60V 8.7A 3.8W 25mohm @ 10V | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20 V,漏极... | ||||||
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SI7415DN-T1 | Vishay/Siliconix | PowerPAK 1212-8 | MOSFET 60V 5.7A 1.5W | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:否,晶体管极性:P-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20 V,漏极... | ||||||
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SI7415DN-T1-E3 | Vishay/Siliconix | PowerPAK? 1212-8 | 93,166 | MOSFET 60V 5.7A 0.065Ohm | |
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20 V,漏极... | ||||||
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SI7415DN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 | MOSFET 60V 5.7A 3.8W 65mohm @ 10V | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20 V,漏极... | ||||||
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SI7421DN-T1-E3 | Vishay/Siliconix | PowerPAK? 1212-8 | 3,000 | MOSFET 30V 9.8A 3.6W 25mohm @ 10V | |
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏极... | ||||||
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SI7421DN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 | MOSFET 30V 9.8A 3.6W 25mohm @ 10V | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏极... | ||||||
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SI7423DN-T1-E3 | Vishay/Siliconix | PowerPAK? 1212-8 | 3,000 | MOSFET 30V 11.7A 3.8W 18mohm @ 10V | |
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏极... | ||||||
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SI7423DN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 | MOSFET 30V 11.7A 3.8W 18mohm @ 10V | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏极... | ||||||
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