Vishay/Siliconix
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Vishay/Siliconix功率MOSFET晶体管和集成电路 (IC)用于管理和转换计算机、手机和通信基础架构中的电源,也可用计算机磁盘驱动器和汽车系统中的运动控制。 Vishay/Siliconix模拟开关IC用于对仪表仪器和多种工业产品中的模拟信号进行感应、开关和路径设定。 |
| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
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SIA912DJ-T1-E3 | Vishay/Siliconix | PowerPAK SC-70-6 Dual | MOSFET 12V 4.5A 6.5W | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:12 V,闸/源击穿电压:+/- 8 V,漏极连... | ||||||
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SIA912DJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 双 | MOSFET 12V 4.5A 6.5W 40mohm @ 4.5V | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:12 V,闸/源击穿电压:+/- 8 V,漏极连... | ||||||
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SIA913ADJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 双 | 12,000 | MOSFET 12V 4.5A 6.5W 61mohm @ 4.5V | |
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:12 V,闸/源击穿电压:+/- 8 V,漏极连... | ||||||
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SIA913DJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 双 | MOSFET 12V 4.5A 6.5W 70mohm @ 4.5V | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:12 V,闸/源击穿电压:+/- 8 V,漏极连... | ||||||
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SIA914DJ-T1-E3 | Vishay/Siliconix | PowerPAK? SC-70-6 双 | MOSFET DUAL N-CH 20V(D-S) | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:+/- 8 V,漏极连... | ||||||
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SIA914DJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 双 | MOSFET 20V 4.5A 6.5W 53mohm @ 4.5V | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:+/- 8 V,漏极连... | ||||||
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SIA915DJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 双 | MOSFET 30V 4.5A 6.5W 87mOhms @ 10V | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 30 V,闸/源击穿电压:+/- 20 V,... | ||||||
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SIA917DJ-T1-E3 | Vishay/Siliconix | PowerPAK SC-70-6 Dual | MOSFET 20V 4.5A 6.5W | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:+/- 12 V,漏极... | ||||||
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SIA917DJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 双 | MOSFET 20V 4.5A 6.5W 110mohm @ 4.5V | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:+/- 12 V,漏极... | ||||||
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SIA920DJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 双 | MOSFET 8V 4.5A 7.8W 27mOhms @ 4.5V | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:8 V,闸/源击穿电压:+/- 5 V,漏极连续... | ||||||
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SIA921EDJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 双 | 5,882 | MOSFET -20V 59mOhm@4.5V 4.5A P-Ch G-III | |
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 20 V,闸/源击穿电压:+/- 12 V,... | ||||||
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SIA923EDJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 双 | 2,940 | MOSFET -20V 54mOhm@4.5V 4.5A P-Ch G-III | |
| 参数:制造商:Vishay,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 20 V,闸/源击穿电压:8 V,漏极连续电流:- 4.5 A,电阻... | ||||||
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SIA929DJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 双 | MOSFET -30V 64mOhm@10V 4.5A P-Ch G-III | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 30 V,闸/源击穿电压:12 V,漏极连续... | ||||||
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SIA950DJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 双 | MOSFET 190V 0.95A 7.0W 3.8ohm @ 4.5V | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:190 V,闸/源击穿电压:+/- 16 V,漏... | ||||||
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SIA975DJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 双 | MOSFET -12V 41mOhm@4.5V 4.5A P-Ch G-III | ||
| 参数:制造商:Vishay,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 12 V,闸/源击穿电压:8 V,漏极连续电流:- 4.5 A,电阻... | ||||||
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SI9801DY | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 20V 4.5/4A 2W | ||
| 参数:制造商:Vishay,RoHS:否,晶体管极性:N and P-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:+/- 14 V,漏极连续电流:4... | ||||||
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SI9802DY | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 20V 4.5A 2W | ||
| 参数:制造商:Vishay,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:+/- 12 V,漏极... | ||||||
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SI9803DY | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 25V 5.9A 2.5W | ||
| 参数:制造商:Vishay,RoHS:否,晶体管极性:P-Channel,汲极/源极击穿电压:25 V,闸/源击穿电压:+/- 12 V,漏极连续电流:5.9 A,电... | ||||||
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SI9804DY | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 25V 7.8A 2.5W | ||
| 参数:制造商:Vishay,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:25 V,闸/源击穿电压:+/- 12 V,漏极连续电流:7.8 A,电... | ||||||
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SI9806DY | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 25V 7/1.8 2.5W | ||
| 参数:制造商:Vishay,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:25 V,闸/源击穿电压:+/- 12 V,漏极连续电流:7 A,电阻汲... | ||||||
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