图片 |
型号 |
品牌 |
封装 |
数量 |
描述 |
PDF资料 |
|
GF9926\5B |
Vishay Semiconductors |
SO-8 |
|
MOSFET USE 781-SI9926ADY |
|
参数:制造商:Vishay,RoHS:否,安装风格:SMD/SMT,封装形式:SO-8,工厂包装数量:2500,... |
|
GFB50N03\31B |
Vishay Semiconductors |
TO-263AB |
|
MOSFET N-Channel 30V 50A |
|
参数:制造商:Vishay,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:20 V,漏极连续电流... |
|
GFB70N03\31B |
Vishay Semiconductors |
TO-263AB |
|
MOSFET N-Channel 30V 70A |
|
参数:制造商:Vishay,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:20 V,漏极连续电流... |
|
GFB75N03\31B |
Vishay Semiconductors |
TO-263AB |
186 |
MOSFET N-Channel 30V 80A |
|
参数:制造商:Vishay,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:20 V,漏极连续电流... |
|
GFD2206\27K |
Vishay Semiconductors |
TO-252 |
|
MOSFET N-Channel 30V 13A |
|
参数:制造商:Vishay,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:20 V,漏极连续电流... |
|
GFD30N03\27K |
Vishay Semiconductors |
|
|
MOSFET TO-252 N-CH 30V 30A |
|
参数:制造商:Vishay,RoHS:否,工厂包装数量:3000,... |
|
GFD50N03\27B |
Vishay Semiconductors |
TO-252 |
|
MOSFET U 781-SUD50N03-10AP |
|
参数:制造商:Vishay,RoHS:否,漏极连续电流:10 A,安装风格:SMD/SMT,封装形式:TO-252,工厂包装数量:3000,... |
|
GFD50N03A\27C |
Vishay Semiconductors |
TO-252 |
|
MOSFET N-Channel 30V 78A |
|
参数:制造商:Vishay,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:20 V,漏极连续电流... |
|
GFP50N03\45B |
Vishay Semiconductors |
TO-252 |
|
MOSFET USE 781-SUP45N03-13L |
|
参数:制造商:Vishay,RoHS:否,晶体管极性:N-Channel,漏极连续电流:10 A,安装风格:SMD/SMT,封装形式:TO-252,工厂包装数量:50... |
|
GFP60N03\45B |
Vishay Semiconductors |
TO-220 |
|
MOSFET TO-220 N-CH 30V 60A |
|
参数:制造商:Vishay,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,漏极连续电流:60 A,安装风格:Through Hole,封... |
|
GFP70N03\45B |
Vishay Semiconductors |
TO-220 |
|
MOSFET TO-220 N-CH 30V 70A |
|
参数:制造商:Vishay,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,漏极连续电流:70 A,安装风格:Through Hole,封... |
|
GFP75N03\45B |
Vishay Semiconductors |
TO-220AB |
46 |
MOSFET N-Channel 30V 80A |
|
参数:制造商:Vishay,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:20 V,漏极连续电流... |
|
GFU50N03\45A |
Vishay Semiconductors |
TO-251 |
|
MOSFET N-Channel 30V 65A |
|
参数:制造商:Vishay,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:20 V,漏极连续电流... |
|
GF4126\5B |
Vishay Semiconductors |
|
|
MOSFET SO-8 N-CH 20V 7.2A |
|
参数:制造商:Vishay,RoHS:否,工厂包装数量:2500,... |
|
GF4410\5B |
Vishay Semiconductors |
|
|
MOSFET USE 781-ST4410DY |
|
参数:制造商:Vishay,RoHS:否,工厂包装数量:2500,... |
|
GF4412\5B |
Vishay Semiconductors |
SO-8 |
|
MOSFET ALT 781-SI4412ADY |
|
参数:制造商:Vishay,RoHS:否,安装风格:SMD/SMT,封装形式:SO-8,工厂包装数量:2500,... |
|
GF4420\5B |
Vishay Semiconductors |
SO-8 |
|
MOSFET USE 781-SI4420DY |
|
参数:制造商:Vishay,RoHS:否,安装风格:SMD/SMT,封装形式:SO-8,工厂包装数量:2500,... |
|
GF4425\5B |
Vishay Semiconductors |
SO-8 |
|
MOSFET USE 781-SI4425DY |
|
参数:制造商:Vishay,RoHS:否,安装风格:SMD/SMT,封装形式:SO-8,工厂包装数量:2500,... |
|
GF4435\5B |
Vishay Semiconductors |
SO-8 |
|
MOSFET P-Channel 30V 8A |
|
参数:制造商:Vishay,RoHS:否,晶体管极性:P-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:20 V,漏极连续电流:8 A,电阻汲极/源极... |
|
GF4450\5B |
Vishay Semiconductors |
|
|
MOSFET SO-8 N-CH 60V 7.5A |
|
参数:制造商:Vishay,RoHS:否,工厂包装数量:2500,... |