Vishay Semiconductors
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Vishay Semiconductors(此前的Vishay Telefunken、General Semiconductor和Infineon Technologies红外元器件业务)是世界上最大的红外数据通信设备(IRDC)和整流器供应商。Vishay是第二大光耦合器供应商和第三大光学传感器供应商。在这些领域中,Vishay Semiconductors将原Vishay Telefunken、General Semiconductor(最大的中低功率整流器和TVS二极管的生产商)以及Infineon Technologies的红外元器件业务的产品系列相结合。以单一来源,向Vishay Semiconductors客户广泛提供用于短程红外数据传输、电源管理、远程控制和电气安全的通用半导体产品组合。 |
图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
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IRFD320PBF | Vishay Semiconductors | 4-DIP(0.300",7.62mm) | 484 | MOSFET N-Chan 400V 0.49 Amp | ||
参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:400 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
IRFD420PBF | Vishay Semiconductors | 4-DIP(0.300",7.62mm) | MOSFET N-Chan 400V 0.37 Amp | |||
参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
IRFD9010PBF | Vishay Semiconductors | 4-DIP(0.300",7.62mm) | 2,169 | MOSFET P-Chan 50V 1.1 Amp | ||
参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:50 V,闸/源击穿电压:20 V,漏极连续电流... | ||||||
IRFD9014PBF | Vishay Semiconductors | 4-DIP(0.300",7.62mm) | 1 | MOSFET P-Chan 60V 1.1 Amp | ||
参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20 V,漏极... | ||||||
IRFD9020PBF | Vishay Semiconductors | 4-DIP(0.300",7.62mm) | 7,877 | MOSFET P-Chan 60V 1.6 Amp | ||
参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:20 V,漏极连续电流... | ||||||
IRFD9024PBF | Vishay Semiconductors | 4-DIP(0.300",7.62mm) | 2,364 | MOSFET P-Chan 60V 1.6 Amp | ||
参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20 V,漏极... | ||||||
IRFD9110PBF | Vishay Semiconductors | 4-DIP(0.300",7.62mm) | 4,311 | MOSFET P-Chan 100V 0.7 Amp | ||
参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
IRFD9120PBF | Vishay Semiconductors | 4-DIP(0.300",7.62mm) | 54,764 | MOSFET P-Chan 100V 1.0 Amp | ||
参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
IRFD9210PBF | Vishay Semiconductors | 4-DIP(0.300",7.62mm) | 6,646 | MOSFET P-Chan 200V 0.4 Amp | ||
参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
IRFD9220PBF | Vishay Semiconductors | 4-DIP(0.300",7.62mm) | MOSFET P-Chan 200V 0.56 Amp | |||
参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
IRFDC20PBF | Vishay Semiconductors | 4-DIP(0.300",7.62mm) | 8,968 | MOSFET N-Chan 600V 0.32 Amp | ||
参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
IRFR9010TRLPBF | Vishay Semiconductors | D-Pak | MOSFET P-Chan 60V 5.1 Amp | |||
参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:50 V,漏极连续电流:5.3 A,电阻汲极/源... | ||||||
IRFR9014CPBF | Vishay Semiconductors | MOSFET P-Chan 60V 5.1 Amp | ||||
参数:制造商:Vishay,产品种类:MOSFET,RoHS:否,晶体管极性:P-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20 V,漏极... | ||||||
IRFR9014CTRLPBF | Vishay Semiconductors | MOSFET P-Chan 60V 5.1 Amp | ||||
参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,包装形式:Reel,工厂包装数量:3000,... | ||||||
IRFR9024CPBF | Vishay Semiconductors | MOSFET P-Chan 60V 8.8 Amp | ||||
参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,包装形式:Tube,工厂包装数量:75,... | ||||||
IRFR9024CTRLPBF | Vishay Semiconductors | MOSFET P-Chan 60V 8.8 Amp | ||||
参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,包装形式:Reel,工厂包装数量:3000,... | ||||||
IRFU010PBF | Vishay Semiconductors | IPAK | MOSFET N-Chan 60V 7.7 Amp | |||
参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:50 V,闸/源击穿电压:+/- 20 V,漏极... | ||||||
IRFU9010PBF | Vishay Semiconductors | TO-251-3 短引线,IPak,TO-251AA | 2,707 | MOSFET P-Chan 50V 5.3 Amp | ||
参数:制造商:Vishay,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:50 V,漏极连续电流:5.3 A,配置:Sin... | ||||||
GF6968A\5B | Vishay Semiconductors | TSSOP-8 | MOSFET USE 781-SI6968ADQ | |||
参数:制造商:Vishay,RoHS:否,安装风格:SMD/SMT,封装形式:TSSOP-8,工厂包装数量:3000,... | ||||||
GF9410\5B | Vishay Semiconductors | SO-8 | MOSFET N-Channel 30V 2A | |||
参数:制造商:Vishay,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:20 V,漏极连续电流... |
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