Toshiba
|
Toshiba America Electronic Components, Inc. (TAEC) is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer. Toshiba is a global leader in the design and manufacture of high-quality Flash memory-based storage solutions, discrete devices, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers (MCUs), and wireless components.Toshiba products are ideal for automotive, imaging, LED lighting, mobile, multimedia, and wireless applications. |
| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
TK15D60U(Q) | Toshiba | TO-220 | MOSFET MOSFET DTMOS-II N-Ch 600V 15A | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸/源击穿电压：+/- 30 V，... | ||||||
|
|
TK15E60U,S1X(S | Toshiba | MOSFET N-Ch MOS 15A 600V 170W 950pF 0.3 | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Tube，... | ||||||
|
|
TK15H50C(Q) | Toshiba | TO-3P(W) | MOSFET MOSFET N-Ch 500V 15A Rdson=0.4Ohm | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：500 V，闸/源击穿电压：30 V，漏极连续... | ||||||
.JPG)
|
TK15J60U(F) | Toshiba | TO-3P-3，SC-65-3 | MOSFET MOSFET DTMOS-II N-Ch 600V 15A | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸/源击穿电压：+/- 30 V，... | ||||||
|
|
TK15X60U(TE24L,Q) | Toshiba | TFP | MOSFET MOSFET DTMOS-II N-Ch 600V 15A | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸/源击穿电压：+/- 30 V，... | ||||||
|
TK16A45D(STA4,Q,M) | Toshiba | TO-220SIS | MOSFET N-Ch MOS 16A 450V 50W 2300pF 0.27 | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Tube，... | ||||||
|
|
TK16A55D(STA4,Q,M) | Toshiba | TO-220SIS | MOSFET N-Ch MOS 16A 550V 50W 2600pF 0.33 | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Tube，... | ||||||
|
TK16A60W5,S4VX | Toshiba | TO-220SIS | MOSFET N-Ch 15.8A 40W FET 600V 1350pF 43nC | ||
| 参数：制造商：Toshiba，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，漏极连续电流：15.8 A，电阻汲极/源极 RDS（导通）... | ||||||
|
TK16E60W,S1VX | Toshiba | TO-220 | MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC | ||
| 参数：制造商：Toshiba，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸/源击穿电压：30 V，漏极连续电流：15.8 A，电阻... | ||||||
|
|
TK16H60C(Q) | Toshiba | TO-3P(W) | MOSFET MOSFET N-Ch 600V 16A Rdson=0.4Ohm | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸/源击穿电压：30 V，漏极连续... | ||||||
|
TK16J60W,S1VQ | Toshiba | TO-3P-3，SC-65-3 | MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC | ||
| 参数：制造商：Toshiba，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸/源击穿电压：30 V，漏极连续电流：15.8 A，电阻... | ||||||
|
|
TK17J65U(F) | Toshiba | MOSFET N-Ch MOS 17A 650V 190W 1450pF 0.26 | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Tube，... | ||||||
|
|
TK18A50D(STA4,Q,M) | Toshiba | TO-220SIS | MOSFET N-Ch MOS 18A 500V 50W 2600pF 0.27 | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Tube，... | ||||||
|
|
TK18A60V(Q) | Toshiba | MOSFET N-Ch MOS 18A 600V 50W 2600pF 0.27 | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Tube，... | ||||||
|
|
TK18A60V(S4V,Q) | Toshiba | TO-220SIS-3 | 5 | MOSFET N-CH 600V 18A 45W 0.19 OHM | |
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸/源击穿电压：+/- 30 V，... | ||||||
|
|
TK18E10K3,S1X(S | Toshiba | TO-220-3 | MOSFET N-Ch MOS 18A 100V 71W 0.042 Ohm | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Tube，... | ||||||
|
|
TK19A45D(STA4,Q,M) | Toshiba | TO-220SIS | MOSFET N-Ch MOS 19A 450V 50W 2600pF 0.25 | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Tube，... | ||||||
|
|
TK20A25D(Q) | Toshiba | MOSFET N-Ch MOS 20A 250V 45W 2550pF 0.1 | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Tube，... | ||||||
|
|
TK20A60U(Q) | Toshiba | TO-220 SIS | MOSFET MOSFET N-Ch 600V 20A | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，漏极连续电流：20 A，电阻汲极/... | ||||||
.JPG)
|
TK20A60U(Q,M) | Toshiba | TO-220SIS | MOSFET MOSFET DTMOS-II N-CH 600V, 20A | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸/源击穿电压：+/- 30 V，... | ||||||
7/41 首页 上页 [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] 下页 尾页
