Toshiba
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Toshiba America Electronic Components, Inc. (TAEC) is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer. Toshiba is a global leader in the design and manufacture of high-quality Flash memory-based storage solutions, discrete devices, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers (MCUs), and wireless components.Toshiba products are ideal for automotive, imaging, LED lighting, mobile, multimedia, and wireless applications. |
| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
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2SK2231(TE16R1,NQ) | Toshiba | PW-MOLD | MOSFET N-Ch 60V 5A Rdson 0.12 Ohm | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 20 V，漏... | ||||||
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2SK2232 | Toshiba | MOSFET N-Ch 60V 25A Rdson 0.046 Ohm | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，... | ||||||
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2SK2232(F,T) | Toshiba | TO-220 NIS | MOSFET N-Ch 60V 25A Rdson 0.046 Ohm | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，漏极连续电流：25 A，电阻汲极/源... | ||||||
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2SK2266(TE24R,Q) | Toshiba | TO-252-3，DPak（2 引线 + 接片），SC-63 | MOSFET N-ch 60V 45A 0.040 ohm | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 20 V，漏... | ||||||
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2SK2311(TE24L,Q) | Toshiba | TO-220 SM | MOSFET N-ch 60V 25A 0.057 ohm | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 20 V，漏... | ||||||
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2SK2312 | Toshiba | TO-220 | MOSFET N-Ch 60V 45A Rdson 0.017 Ohm | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 20 V，漏... | ||||||
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2SK2312(F) | Toshiba | TO-220 NIS | MOSFET N-Ch 60V 45A Rdson 0.017 Ohm | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，漏极连续电流：45 A，电阻汲极/源... | ||||||
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2SK2313(F) | Toshiba | TO-3P | MOSFET MOSFET N-Ch 60V 60A Rdson=0.011Ohm | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 20 V，漏... | ||||||
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2SK2314 | Toshiba | MOSFET N-Ch 100V 27A Rdson 0.085 Ohm | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，... | ||||||
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2SK2314(F) | Toshiba | TO-220 ABL | MOSFET N-Ch 100V 27A Rdson 0.085 Ohm | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电压：+/- 20 V，... | ||||||
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2SK2376(Q) | Toshiba | TO-220-3（SMT）标片 | MOSFET MOSFET N-Ch 60V 45A Rdson=0.017Ohm | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 20 V，漏... | ||||||
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2SK2381(F,T) | Toshiba | TO-220 NIS | MOSFET MOSFET N-Ch 200V 5A Rdson 0.8 Ohm | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：200 V，闸/源击穿电压：+/- 20 V，... | ||||||
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2SK2385(F,T) | Toshiba | MOSFET MOSFET N-Ch, 60V, 36A | |||
| 参数：制造商：Toshiba，工厂包装数量：50，... | ||||||
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2SK2391(F,T) | Toshiba | TO-220 NIS | MOSFET MOSFET N-Ch 100V 20A Rdson 0.085 Ohm | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电压：+/- 20 V，... | ||||||
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2SK2700(Q,T) | Toshiba | TO-220 | MOSFET N-ch 900V 3A 3.7 ohm | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：900 V，闸/源击穿电压：30 V，漏极连续... | ||||||
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2SK2717(F,T) | Toshiba | TO-220 | MOSFET MOSFET N-Ch 900V 5A Rdson=2.5Ohm | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：900 V，闸/源击穿电压：30 V，漏极连续... | ||||||
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2SK2776(Q) | Toshiba | TO-220 FL | MOSFET MOSFET N-Ch 500V 8A Rdson=0.85Ohm | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：500 V，闸/源击穿电压：+/- 30 V，... | ||||||
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2SK2776(TE24L,Q) | Toshiba | TO-220 SM | MOSFET MOSFET N-Ch 500V 8A Rdson=0.85Ohm | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：500 V，闸/源击穿电压：30 V，漏极连续... | ||||||
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2SK2782(TE16L1,Q) | Toshiba | DP | MOSFET MOSFET N-Ch 60V 20A Rdson 0.055 Ohm | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 20 V，漏... | ||||||
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2SK2841 | Toshiba | MOSFET N-Ch 400V 10A Rdson 0.4 Ohm | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，... | ||||||
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