Toshiba
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Toshiba America Electronic Components, Inc. (TAEC) is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer. Toshiba is a global leader in the design and manufacture of high-quality Flash memory-based storage solutions, discrete devices, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers (MCUs), and wireless components.Toshiba products are ideal for automotive, imaging, LED lighting, mobile, multimedia, and wireless applications. |
| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
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SSM6J414TU,LF | Toshiba | 6-SMD，扁平引线 | 315 | MOSFET P-Ch U-MOS VI FET ID -6A -20V 1650pF | |
| 参数：制造商：Toshiba，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，闸/源击穿电压：8 V，漏极连续电流：- 6 A，电阻汲... | ||||||
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SSM6J501NU,LF | Toshiba | 6-WDFN 裸露焊盘 | 45,025 | MOSFET PWR MGT 1.5V Drive P-Ch MOS -20V | |
| 参数：制造商：Toshiba，产品种类：MOSFET，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，闸/源击穿电压：8 V，漏极连续电流：- 10... | ||||||
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SSM6J502NU,LF | Toshiba | 6-WDFN 裸露焊盘 | MOSFET SM Sig P-CH MOS ID -6A -20V -8 VGSS | ||
| 参数：制造商：Toshiba，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，闸/源击穿电压：8 V，漏极连续电流：- 6 A，电阻汲... | ||||||
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SSM6J503NU,LF | Toshiba | 6-WDFN 裸露焊盘 | 3,000 | MOSFET SM Sig P-CH MOS ID -6A -20V -8 VGSS | |
| 参数：制造商：Toshiba，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，闸/源击穿电压：8 V，漏极连续电流：- 6 A，电阻汲... | ||||||
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SSM6J505NU,LF | Toshiba | 6-WDFN 裸露焊盘 | 4,474 | MOSFET P-Ch U-MOS VI FET ID -12A -12V 1200pF | |
| 参数：制造商：Toshiba，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 12 V，闸/源击穿电压：6 V，漏极连续电流：- 12 A，电阻... | ||||||
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SSM6J50TU | Toshiba | MOSFET INCORRECT MOUSER P/N 6Pin | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，... | ||||||
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SSM6J50TU(TE85L,F) | Toshiba | ES-6 | MOSFET Vds=-20V Id=-2.5A 6Pin | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，漏极连续电流：- 2.5 A，电... | ||||||
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SSM6J51TUTE85LF | Toshiba | ES-6 | MOSFET Vds=-12V Id=-4A 6Pin | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 12 V，漏极连续电流：- 4 A，电阻汲... | ||||||
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SSM6J53FE | Toshiba | ES-6 | MOSFET Vds=-20V Id=1.8A 6Pin | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：20 V，闸/源击穿电压：+/- 8 V，漏极... | ||||||
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SSM6J53FETE85LF | Toshiba | MOSFET Singel P-ch 20V 1.8A | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：20 V，闸/源击穿电压：+/- 8 V，漏极... | ||||||
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SSM6K07FUTE85LF | Toshiba | ES-6 | 2331 | MOSFET Vds=30V Id=1.5A 6Pin | |
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，漏极连续电流：1.5 A，电阻汲极/... | ||||||
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SSM6K08FUTE85LF | Toshiba | ES-6 | MOSFET Vds=20V Id=1.6A 6Pin | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，漏极连续电流：1.6 A，电阻汲极/... | ||||||
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SSM6K18TU | Toshiba | MOSFET INCORRECT MOUSER P/N 6Pin | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，... | ||||||
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SSM6K18TU(TE85L,F) | Toshiba | ES-6 | 1665 | MOSFET Vds=20V Id=4A 6Pin | |
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，漏极连续电流：4 A，电阻汲极/源极... | ||||||
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SSM6K202FE | Toshiba | MOSFET INCORRECT MOUSER P/N 6Pin | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，... | ||||||
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SSM6K202FE(TE85L,F | Toshiba | SOT-563 | 394 | MOSFET Vds=30V Id=2.3A 6Pin | |
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，漏极连续电流：2.3 A，电阻汲极/... | ||||||
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SSM6K22FE | Toshiba | MOSFET INCORRECT MOUSER P/N 6Pin | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，... | ||||||
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SSM6K22FE(TE85L,F) | Toshiba | ES-6 | MOSFET Vds=20V Id=1.4A 6Pin | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，漏极连续电流：1.4 A，电阻汲极/... | ||||||
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SSM6K24FE | Toshiba | MOSFET INCORRECT MOUSER P/N 6Pin | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，... | ||||||
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SSM6K24FE(TE85L,F) | Toshiba | ES-6 | 2596 | MOSFET Vds=30V Id=500mA 6Pin | |
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，漏极连续电流：0.5 A，电阻汲极/... | ||||||
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