Toshiba
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Toshiba America Electronic Components, Inc. (TAEC) is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer. Toshiba is a global leader in the design and manufacture of high-quality Flash memory-based storage solutions, discrete devices, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers (MCUs), and wireless components.Toshiba products are ideal for automotive, imaging, LED lighting, mobile, multimedia, and wireless applications. |
| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
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TPCF8102(TE85L,F,M | Toshiba | 8-SMD，扁平引线 | MOSFET MOSFET P-Ch 20V 6A | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，闸/源击穿电压：+/- 8 V，... | ||||||
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TPCF8103(TE85L,F) | Toshiba | VS-8 | MOSFET PW TR P-Ch -20V -5.5A | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，闸/源击穿电压：8 V，漏极连续... | ||||||
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TPCF8103(TE85L,F,M | Toshiba | MOSFET P-ch -20V -2.7A VS-8 | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Reel，... | ||||||
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TPCF8104(TE85L,F) | Toshiba | VS-8 | MOSFET PW TR P-Ch -30V -6A | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，闸/源击穿电压：+/- 20 V... | ||||||
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TPCF8104(TE85L,F,M | Toshiba | VS-8 | MOSFET MOSFET P-Ch 30V 6A | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，闸/源击穿电压：+/- 20 V... | ||||||
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TPCF8201(TE85L,F) | Toshiba | VS-8 | MOSFET PW TR N-Ch 20V 3A | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/源击穿电压：12 V，漏极连续电... | ||||||
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TPCF8201(TE85L,F,M | Toshiba | VS-8（2.9x1.5） | MOSFET N-Ch Dual 20V 3A VS8 | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/源击穿电压：+/- 12 V，漏... | ||||||
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TPCF8301(TE85L,F) | Toshiba | VS-8 | MOSFET PW TR P-Ch -20V -2.7A | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，闸/源击穿电压：8 V，漏极连续... | ||||||
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TPCF8302(TE85L,F) | Toshiba | VS-8 | MOSFET PW TR P-Ch -20V -3A | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，闸/源击穿电压：10 V，漏极连... | ||||||
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TPCF8302(TE85L,F,M | Toshiba | MOSFET P-ch -20V -3A VS-8 | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Reel，... | ||||||
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TPCF8303(TE85L,F) | Toshiba | VS-8 | MOSFET PW TR P-Ch -20V -3A | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，闸/源击穿电压：8 V，漏极连续... | ||||||
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TPCF8303(TE85L,F,M | Toshiba | MOSFET P-ch -20V -3A VS-8 | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Reel，... | ||||||
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TPCF8304(TE85L,F) | Toshiba | VS-8 | MOSFET P-Ch Dual -30V -3.2A | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，闸/源击穿电压：+/- 20 V... | ||||||
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TPCF8304(TE85L,F,M | Toshiba | VS-8（2.9x1.5） | MOSFET P-ch -30V -3.2A VS-8 | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Reel，... | ||||||
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TPCF8305,LF(J | Toshiba | MOSFET MOSFET, P-ch, -20V, -4A, VS8 | |||
| 参数：制造商：Toshiba，... | ||||||
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TPCF8305LF(J | Toshiba | MOSFET P-Ch -20V FET 1.35W -4A 680pF | |||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，包装形式：Reel，... | ||||||
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TPCF8402(TE85L,F) | Toshiba | VS-8 | MOSFET PW TR N-P-Ch 30V 4A 1.35W | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- ... | ||||||
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TPCF8402(TE85L,F,M | Toshiba | VS-8（2.9x1.5） | MOSFET MOSFET N-Ch P-Ch 30V 4 3.2A | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- ... | ||||||
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TPCF8B01(TE85L,F) | Toshiba | VS-8 | MOSFET PW TR with SBD P-Ch -20V -2.7A | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，闸/源击穿电压：8 V，漏极连续... | ||||||
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TPCF8B01(TE85L,F,M | Toshiba | VS-8（2.9x1.5） | MOSFET MOSFET P-Ch SBD 20V 2.7A | ||
| 参数：制造商：Toshiba，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，闸/源击穿电压：+/- 8 V，... | ||||||
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