Toshiba
|
Toshiba America Electronic Components, Inc. (TAEC) is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer. Toshiba is a global leader in the design and manufacture of high-quality Flash memory-based storage solutions, discrete devices, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers (MCUs), and wireless components.Toshiba products are ideal for automotive, imaging, LED lighting, mobile, multimedia, and wireless applications. |
| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
|
TPCA8006-H(TE12LQM | Toshiba | SOP-8 | MOSFET MOSFET N-Ch 100V 18A Rdson=0.067Ohm | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,... | ||||||
|
TPCA8007-H(TE12L,Q | Toshiba | - | MOSFET N-Ch 100V 20A 0.003 Ohms | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,... | ||||||
|
TPCA8008-H(TE12LQM | Toshiba | 8-PowerVDFN | MOSFET MOSFET N-Ch 250V 4A | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:250 V,闸/源击穿电压:+/- 20 V,... | ||||||
|
TPCA8009-H(TE12LQM | Toshiba | SOP-8 | MOSFET MOSFET N-Ch 150V 7A | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:150 V,闸/源击穿电压:+/- 20 V,... | ||||||
|
TPCA8010-H(TE12LQM | Toshiba | 8-PowerVDFN | MOSFET MOSFET N-Ch 200V 5.5A | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:20 V,漏极连续... | ||||||
|
TPCA8010-H(TE12LQMXX | Toshiba | MOSFET N-CH FET 3.7nC 100uA 200V VDSS 5.5A | |||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,包装形式:Reel,... | ||||||
|
TPCA8011-H(TE12LQM | Toshiba | 8-PowerVDFN | MOSFET MOSFET N-Ch 20V 40A | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:12 V,漏极连续电... | ||||||
|
TPCA8012-H(TE12LQM | Toshiba | 8-PowerVDFN | MOSFET MOSFET N-Ch 30V 40A Rdson 0.0037 Ohm | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
|
TPCA8014-H(TE12LQM | Toshiba | SOP-8 | MOSFET MOSFET N-Ch 40V 30A Rdson=0.009Ohm | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:40 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
|
TPCA8015-H(TE12LQM | Toshiba | SOP-8 | MOSFET MOSFET N-Ch 40V 35A | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:40 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
|
TPCA8016-H(TE12L,Q | Toshiba | SOP-8 | MOSFET MOSFET N-Ch 60V 25A | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
|
|
TPCA8016-H(TE12LQM | Toshiba | 8-SOP Advance(5x5) | MOSFET MOSFET N-Ch 60V 25A Rdson=0.021Ohm | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:60 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
|
TPCA8018-H(TE12L,Q | Toshiba | SOP-8 | MOSFET MOSFET N-Ch 30V 30A | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
|
TPCA8018-H(TE12LQM | Toshiba | 8-PowerVDFN | MOSFET MOSFET N-Ch 30V 30A Rdson 0.0043 Ohm | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
|
TPCA8019-H(TE12LQM | Toshiba | SOP-8 | MOSFET MOSFET N-Ch 30V 45A Rdson 0.0023 Ohm | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
|
TPCA8020-H(TE12LQM | Toshiba | SOP-8 | MOSFET MOSFET N-Ch 40V 7.5A Rdson=0.027Ohm | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:40 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
|
TPCA8021-H(TE12LQM | Toshiba | 8-PowerVDFN | MOSFET MOSFET N-Ch 30V 27A Rdson=0.009Ohm | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
|
TPCA8022-H(TE12L,Q | Toshiba | SOP-8 | MOSFET MOSFET N-Ch 100V 22A Rdson=0.022Ohm | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,... | ||||||
|
TPCA8022-H(TE12LQM | Toshiba | SOP-8 | MOSFET MOSFET N-Ch 100V 22A | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:+/- 20 V,... | ||||||
|
TPCA8023-H(TE12L,Q | Toshiba | SOP-8 | MOSFET MOSFET N-Ch 30V 20A Rdson 0.0096 Ohm | ||
| 参数:制造商:Toshiba,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20 V,漏... | ||||||
21/41 首页 上页 [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] 下页 尾页