STMicroelectronics
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends |
| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
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STP34N65M5 | STMicroelectronics | TO-220-3 | 331 | MOSFET N-Ch 650V 0.098 Ohm 29 A MDmesh V | |
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：650 V，漏极连续电流... | ||||||
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STP34NM60N | STMicroelectronics | TO-220-3 | 6 | MOSFET N-Ch 600V 0.092 Ohm MDmesh II 29A Switch | |
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸/源击穿电... | ||||||
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STP34NM60ND | STMicroelectronics | TO-220-3 | MOSFET N-Ch 600V 0.097 Ohm 29A Fdmesh II FD | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸/源击穿电... | ||||||
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STP35N65M5 | STMicroelectronics | TO-220 | MOSFET N-channel 650 V MDMesh | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：650 V，闸/源击穿电... | ||||||
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STP35NF10 | STMicroelectronics | TO-220 | MOSFET N-Ch 100 Volt 40 Amp | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电... | ||||||
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STP36N06 | STMicroelectronics | TO-220 | MOSFET TO-220 N-CH 60V 18A | ||
| 参数：制造商：STMicroelectronics，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 20 V，漏极... | ||||||
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STP36N55M5 | STMicroelectronics | TO-220-3 | 239 | MOSFET N-Ch 550V 0.006 Ohm 33A MDmesh V FET | |
| 参数：制造商：STMicroelectronics，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：550 V，闸/源击穿电压：25 V，漏极连续电... | ||||||
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STP36NE06 | STMicroelectronics | TO-220 | MOSFET RO 511-STP36NF06 | ||
| 参数：制造商：STMicroelectronics，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 20 V，漏极... | ||||||
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STP36NF03L | STMicroelectronics | TO-220 | MOSFET N-Ch 30 Volt 36 Amp | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压... | ||||||
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STP36NF06 | STMicroelectronics | TO-220 | MOSFET N-Ch 60 Volt 30 Amp | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压... | ||||||
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STP36NF06FP | STMicroelectronics | TO-220-3 整包 | MOSFET N-Ch, 60V-0.032ohms 30A | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压... | ||||||
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STP36NF06L | STMicroelectronics | TO-220-3 | MOSFET N-Ch 60 Volt 30 Amp | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压... | ||||||
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STP38N65M5 | STMicroelectronics | TO-220 | MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh V | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：650 V，漏极连续电流... | ||||||
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STP3HNK90Z | STMicroelectronics | TO-220 | MOSFET N-Ch 900 Volt 3.0Amp | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：900 V，闸/源击穿电... | ||||||
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STP3LN62K3 | STMicroelectronics | TO-220-3 | 964 | MOSFET N-Ch 620V 2.5 Ohm 2.5A SuperMESH3 | |
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：620 V，闸/源击穿电... | ||||||
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STP3N150 | STMicroelectronics | TO-220 | MOSFET 1500V 6Ohm 2.5A N-Channel | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：1500 V，闸/源击穿... | ||||||
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STP3N62K3 | STMicroelectronics | TO-220-3 | 338 | MOSFET N-channel 620V, 2.7A Power MOSFET | |
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：620 V，闸/源击穿电... | ||||||
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STP3NA60 | STMicroelectronics | TO-220 | MOSFET N-Ch 600 Volt 2.9 A | ||
| 参数：制造商：STMicroelectronics，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸/源击穿电... | ||||||
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STP3NA80 | STMicroelectronics | TO-220 | MOSFET REORD 511-STP3NB80 TO-220 N-CH 800V 3.1 | ||
| 参数：制造商：STMicroelectronics，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：800 V，闸/源击穿电压：+/- 30 V，漏... | ||||||
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STP3NB100 | STMicroelectronics | TO-220-3 | MOSFET N-Ch 1000 Volt 3 Amp | ||
| 参数：制造商：STMicroelectronics，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：1000 V，闸/源击穿电压：+/- 30 V，... | ||||||
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